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    SIHU3N50D Search Results

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    SIHU3N50D Price and Stock

    Vishay Siliconix SIHU3N50D-E3

    MOSFET N-CH 500V 3A TO251AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHU3N50D-E3 Tube 3,000
    • 1 -
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    • 100 -
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    • 10000 $0.36746
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    Bristol Electronics SIHU3N50D-E3 2,775
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    SIHU3N50D-E3 75 6
    • 1 -
    • 10 $0.9375
    • 100 $0.6094
    • 1000 $0.6094
    • 10000 $0.6094
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    Quest Components SIHU3N50D-E3 2,220
    • 1 $1.5
    • 10 $1.5
    • 100 $1.5
    • 1000 $0.6
    • 10000 $0.525
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    SIHU3N50D-E3 60
    • 1 $1.25
    • 10 $1
    • 100 $0.625
    • 1000 $0.625
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    Vishay Siliconix SIHU3N50D-GE3

    MOSFET N-CH 500V 3A TO251
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHU3N50D-GE3 Tube 3,000
    • 1 -
    • 10 -
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    • 10000 $0.33456
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    Vishay Siliconix SIHU3N50DA-GE3

    MOSFET N-CHANNEL 500V 3A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHU3N50DA-GE3 Tube 3,000
    • 1 -
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    • 10000 $0.33456
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    Vishay Intertechnologies SIHU3N50D-E3

    Mosfet, N-Ch, 500V, 3A, To-251Aa-3, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SIHU3N50D-E3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SIHU3N50D-E3 Reel 3,000
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    SIHU3N50D-E3 Cut Tape 3,000
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    Vishay Intertechnologies SIHU3N50D-GE3

    Mosfet Transistor, N Channel, 3 A, 500 V, 2.6 Ohm, 10 V, 3 V Rohs Compliant: Yes |Vishay SIHU3N50D-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SIHU3N50D-GE3 Bulk 1
    • 1 $1.46
    • 10 $1.01
    • 100 $0.893
    • 1000 $0.788
    • 10000 $0.788
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    TME SIHU3N50D-GE3 1
    • 1 $0.757
    • 10 $0.589
    • 100 $0.468
    • 1000 $0.468
    • 10000 $0.468
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    Component Electronics, Inc SIHU3N50D-GE3 142
    • 1 $0.85
    • 10 $0.85
    • 100 $0.63
    • 1000 $0.55
    • 10000 $0.55
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    SIHU3N50D Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHU3N50DA-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 500V 3A IPAK Original PDF
    SIHU3N50D-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO251 IPAK Original PDF
    SIHU3N50D-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO251 IPAK Original PDF

    SIHU3N50D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    forth dimension displays

    Abstract: SIHU3N50D-GE3
    Text: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original     		SiHU3N50D O-251) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 forth dimension displays SIHU3N50D-GE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHU3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness


    Original     		SiHU3N50DA O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original     		SiHU3N50D O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 12


    Original     		SiHU3N50D O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original     		SiHU3N50D O-251) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


    Original     		O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF