Untitled
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology
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PDF
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V
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Original
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PDF
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IRLZ34,
SiHLZ34
O-220
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V
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Original
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PDF
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IRLZ34,
SiHLZ34
2002/95/EC
O-220AB
O-220AB
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V
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Original
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PDF
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IRLZ34,
SiHLZ34
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single DESCRIPTION D I2PAK D2PAK (TO-262) G
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Original
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PDF
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
IRLZ34S/SiHLZ34S)
IRLZ34L/SiHLZ34L)
12-Mar-07
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DD 1518
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • 60 RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration • Fast Switching • Fully Avalanche Rated Single
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Original
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PDF
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
18-Jul-08
DD 1518
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AN609
Abstract: IRLZ34L IRLZ34S SiHLZ34S
Text: IRLZ34S_RC, IRLZ34L_RC, SiHLZ34S_RC, SiHLZ34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRLZ34S
IRLZ34L
SiHLZ34S
SiHLZ34L
AN609,
4829m
1545m
8453m
8853m
8989m
AN609
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IRLZ34L
Abstract: IRLZ34S SiHLZ34S
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration • Fast Switching • Fully Avalanche Rated Single
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Original
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PDF
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
O-262)
IRLT34S,
18-Jul-08
IRLZ34L
IRLZ34S
|
SiHLZ34L
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ34S, SiHLZ34S) • Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)
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Original
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PDF
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
2002/95/EC
18-Jul-08
|
AN609
Abstract: IRLZ34 SiHLZ34
Text: IRLZ34_RC, SiHLZ34_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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PDF
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IRLZ34
SiHLZ34
AN609,
5985m
2012m
8061m
1186m
8087m
5497m
5344u
AN609
|
Untitled
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology
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Original
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PDF
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
2002/95/EC
2011/65/EU
|
Untitled
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single DESCRIPTION D I2PAK D2PAK (TO-262) G
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Original
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PDF
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
IRLZ34S/SiHLZ34S)
IRLZ34L/SiHLZ34L)
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V
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Original
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PDF
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IRLZ34,
SiHLZ34
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology
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Original
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PDF
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
2002/95/EC
O-262)
|
|
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Untitled
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology
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Original
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PDF
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
2002/95/EC
11-Mar-11
|
part marking ab
Abstract: IRLZ34 SiHLZ34 SiHLZ34-E3 k 1519
Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V
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PDF
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IRLZ34,
SiHLZ34
2002/95/EC
O-220
O-220
18-Jul-08
part marking ab
IRLZ34
SiHLZ34-E3
k 1519
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SiHLZ34
Abstract: IRLZ34 SiHLZ34-E3
Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V
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Original
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PDF
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IRLZ34,
SiHLZ34
O-220
O-220
18-Jul-08
IRLZ34
SiHLZ34-E3
|
Untitled
Abstract: No abstract text available
Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V
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Original
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PDF
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IRLZ34,
SiHLZ34
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
IRLZ34
Abstract: SiHLZ34 SiHLZ34-E3
Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V
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Original
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PDF
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IRLZ34,
SiHLZ34
O-220
O-220
18-Jul-08
IRLZ34
SiHLZ34-E3
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Untitled
Abstract: No abstract text available
Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V
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Original
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PDF
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IRLZ34,
SiHLZ34
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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