SIHFR010 Search Results

SIHFR010 Price and Stock

Filter by Manufacturer


Vishay Intertechnologies SIHFR010-GE3 Transistor: N-MOSFET; unipolar; 50V; 8.2A; Idm: 33A; 25W; DPAK,TO252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHFR010-GE3				1	1 $0.755 10 $0.503 100 $0.42 1000 $0.353 10000 $0.341	Get Quote

SIHFR010 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s	Original	PDF	IRFR010, SiHFR010 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G Low Drive Current Surface Mount Fast Switching Ease of Paralleling	Original	PDF	IRFR010, SiHFR010 O-252) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling	Original	PDF	IRFR010, SiHFR010 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling	Original	PDF	IRFR010, SiHFR010 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRFR9012 Abstract: No abstract text available Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling	Original	PDF	IRFR010, SiHFR010 2002/95/EC 11-Mar-11 IRFR9012
MOSFET 7121 Abstract: AN609 IRFR010 SiHFR010 1712-1 Text: IRFR010_RC, SiHFR010_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRFR010 SiHFR010 AN609, 2433m 0564m 1737u 9554m 2279m 7246m 29-Oct-10 MOSFET 7121 AN609 1712-1
IRFR9012 Abstract: No abstract text available Text: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s	Original	PDF	IRFR010, SiHFR010 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IRFR9012
S10 diode Abstract: IRFR9012 IRFR010 IRFU9012 SiHFR010 SiHFR010-E3 Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling	Original	PDF	IRFR010, SiHFR010 O-252) 2002/95/EC 18-Jul-08 S10 diode IRFR9012 IRFR010 IRFU9012 SiHFR010-E3