Untitled
Abstract: No abstract text available
Text: IRFP054_RC, SiHFP054_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFP054
SiHFP054
AN609,
07-Jun-10
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Untitled
Abstract: No abstract text available
Text: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature
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IRFP054,
SiHFP054
2002/95/EC
O-247AC
O-247emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 • Isolated Central Mounting Hole RoHS* COMPLIANT Qgs (nC) 48 • Fast Switching Qgd (nC) 54 • Ease of Paralleling
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PDF
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IRFP054,
SiHFP054
O-247
O-247
O-220
O-247merchantability,
12-Mar-07
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irfp054
Abstract: No abstract text available
Text: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 • Isolated Central Mounting Hole RoHS* COMPLIANT Qgs (nC) 48 • Fast Switching Qgd (nC) 54 • Ease of Paralleling
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IRFP054,
SiHFP054
O-247
O-247
18-Jul-08
irfp054
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irfp054
Abstract: No abstract text available
Text: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 • Isolated Central Mounting Hole RoHS* COMPLIANT Qgs (nC) 48 • Fast Switching Qgd (nC) 54 • Ease of Paralleling
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Original
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PDF
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IRFP054,
SiHFP054
O-247
O-247
18-Jul-08
irfp054
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Untitled
Abstract: No abstract text available
Text: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature
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Original
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PDF
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IRFP054,
SiHFP054
2002/95/EC
O-247AC
O-247AC
O-220ABtrademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature
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Original
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PDF
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IRFP054,
SiHFP054
2002/95/EC
O-247AC
O-247AC
O-220ABhay
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature
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Original
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PDF
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IRFP054,
SiHFP054
2002/95/EC
O-247
O-247
O-220
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature
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Original
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PDF
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IRFP054,
SiHFP054
2002/95/EC
O-247AC
O-247AC
O-220ABtrademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
Untitled
Abstract: No abstract text available
Text: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature
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Original
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PDF
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IRFP054,
SiHFP054
2002/95/EC
O-247AC
O-247Aelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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