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SiHFI9Z24G Abstract: No abstract text available Text: IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	PDF	IRFI9Z24G, SiHFI9Z24G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IRFI9Z24G Abstract: SiHFI9Z24G Text: IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	PDF	IRFI9Z24G, SiHFI9Z24G O-220 11-Mar-11 IRFI9Z24G
SiHFI9Z24G Abstract: No abstract text available Text: IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	PDF	IRFI9Z24G, SiHFI9Z24G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRFI9Z24G Abstract: SiHFI9Z24G Text: IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	PDF	IRFI9Z24G, SiHFI9Z24G O-220 18-Jul-08 IRFI9Z24G
IRFI9Z24G Abstract: SiHFI9Z24G Text: IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	PDF	IRFI9Z24G, SiHFI9Z24G O-220 18-Jul-08 IRFI9Z24G
SiHFI9Z24G Abstract: No abstract text available Text: IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	PDF	IRFI9Z24G, SiHFI9Z24G O-220 12-Mar-07
SiHFI9Z24G Abstract: No abstract text available Text: IRFI9Z24G_RC, SiHFI9Z24G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	IRFI9Z24G SiHFI9Z24G AN609, 19-May-10
SiHFI9Z24G Abstract: No abstract text available Text: IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	PDF	IRFI9Z24G, SiHFI9Z24G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFI9Z24G Power MOSFET FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI9Z24G O-220