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    IRFI624G

    Abstract: No abstract text available
    Text: IRFI624G, SiHFI624G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 1.1 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		IRFI624G, SiHFI624G O-220 18-Jul-08 IRFI624G PDF

    IRFI624G

    Abstract: No abstract text available
    Text: IRFI624G, SiHFI624G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 1.1 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		IRFI624G, SiHFI624G O-220 18-Jul-08 IRFI624G PDF

    IRFI624G

    Abstract: No abstract text available
    Text: IRFI624G, SiHFI624G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 1.1 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		IRFI624G, SiHFI624G O-220 12-Mar-07 IRFI624G PDF