Untitled
Abstract: No abstract text available
Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
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IRFBC40AS,
SiHFBC40AS
O-263)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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MAR 740 MOSFET TRANSISTOR
Abstract: D 1402
Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFBC40A,
SiHFBC40A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
MAR 740 MOSFET TRANSISTOR
D 1402
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MAR 740 MOSFET TRANSISTOR
Abstract: P 648 H
Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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PDF
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IRFBC40A,
SiHFBC40A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
MAR 740 MOSFET TRANSISTOR
P 648 H
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AN609
Abstract: IRFBC40A SiHFBC40A 9043-2
Text: IRFBC40A_RC, SiHFBC40A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFBC40A
SiHFBC40A
AN609,
20-Apr-10
AN609
9043-2
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Untitled
Abstract: No abstract text available
Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
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Original
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PDF
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IRFBC40AS,
SiHFBC40AS
O-263)
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
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Original
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PDF
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IRFBC40AS,
SiHFBC40AS
2002/95/EC
O-263)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFBC40A,
SiHFBC40A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 V RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220
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Original
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PDF
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IRFBC40LC,
SiHFBC40LC
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFBC40A,
SiHFBC40A
2002/95/EC
O-220AB
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) () VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFBC40LC,
SiHFBC40LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFBC40L
Abstract: IRFBC40S SiHFBC40L SiHFBC40L-E3 SiHFBC40S
Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)
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IRFBC40S,
SiHFBC40S
IRFBC40L,
SiHFBC40L
IRFBC40L
IRFBC40S
SiHFBC40L-E3
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IRFBC20S
Abstract: IRFBC40L IRFBC40S SiHFBC40L SiHFBC40L-E3 SiHFBC40S SiHFBC40S-E3
Text: IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC40S/SiHFBC40S) 600 RDS(on) (Ω) VGS = 10 V RoHS* • Available in Tape and Reel (IRFBC20S, COMPLIANT Qg (Max.) (nC) 60 Qgs (nC)
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IRFBC40S,
IRFBC40L,
SiHFBC40S
SiHFBC40L
IRFBC40S/SiHFBC40S)
IRFBC20S,
SiHFBC20S
O-262)
IRFBC20S
IRFBC40L
IRFBC40S
SiHFBC40L-E3
SiHFBC40S-E3
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AN609
Abstract: IRFBC40AS SiHFBC40AS
Text: IRFBC40AS_RC, SiHFBC40AS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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IRFBC40AS
SiHFBC40AS
AN609,
20-Apr-10
AN609
|
Untitled
Abstract: No abstract text available
Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements
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Original
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PDF
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IRFBC40,
SiHFBC40
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
|
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AN609
Abstract: IRFBC40L IRFBC40S SiHFBC40L SiHFBC40S
Text: IRFBC40S_RC, SiHFBC40S_RC, IRFBC40L_RC, SiHFBC40L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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IRFBC40S
SiHFBC40S
IRFBC40L
SiHFBC40L
AN609,
20-April-10
AN609
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IRFBC40
Abstract: IRFBC40L IRFBC40S SiHFBC40 SiHFBC40L SiHFBC40L-E3 SiHFBC40S SiHFBC40S-E3
Text: IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S) • Dynamic dV/dt Rating
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IRFBC40S,
IRFBC40L,
SiHFBC40S
SiHFBC40L
IRFBC40
IRFBC40L
IRFBC40S
SiHFBC40
SiHFBC40L-E3
SiHFBC40S-E3
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AN609
Abstract: IRFBC40 SiHFBC40
Text: IRFBC40_RC, SiHFBC40_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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PDF
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IRFBC40
SiHFBC40
AN609,
20-Apr-10
AN609
|
Untitled
Abstract: No abstract text available
Text: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) () VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFBC40LC,
SiHFBC40LC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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smps transformer Design using irfbc40a
Abstract: IRFBC40AS SiHFBC40AS SiHFBC40AS-E3
Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFBC40AS,
SiHFBC40AS
O-263)
18-Jul-08
smps transformer Design using irfbc40a
IRFBC40AS
SiHFBC40AS-E3
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IRFBC40
Abstract: SiHFBC40 37AB irfbc40 free SiHFBC40-E3
Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements
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Original
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PDF
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IRFBC40,
SiHFBC40
O-220
O-220
18-Jul-08
IRFBC40
37AB
irfbc40 free
SiHFBC40-E3
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IRFBC40LC
Abstract: SiHFBC40LC-E3 SiHFBC40LC
Text: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 V RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220
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Original
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PDF
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IRFBC40LC,
SiHFBC40LC
O-220
18-Jul-08
IRFBC40LC
SiHFBC40LC-E3
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irfbc
Abstract: IRFBC40STRLPBF
Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)
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Original
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PDF
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IRFBC40S,
SiHFBC40S
IRFBC40L,
SiHFBC40L
irfbc
IRFBC40STRLPBF
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Untitled
Abstract: No abstract text available
Text: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) () VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFBC40LC,
SiHFBC40LC
2002/95/EC
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFBC40AS,
SiHFBC40AS
O-263)
12-Mar-07
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