Untitled
Abstract: No abstract text available
Text: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N60A,
SiHFB9N60A
2002/95/EC
O-220AB
O-220ABhay
11-Mar-11
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PDF
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IRFB9N60A
Abstract: SiHFB9N60A SiHFB9N60A-E3
Text: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*
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Original
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IRFB9N60A,
SiHFB9N60A
O-220
18-Jul-08
IRFB9N60A
SiHFB9N60A-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N60A,
SiHFB9N60A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRFB9N60A
Abstract: SiHFB9N60A SiHFB9N60A-E3
Text: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N60A,
SiHFB9N60A
2002/95/EC
O-220AB
11-Mar-11
IRFB9N60A
SiHFB9N60A-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*
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Original
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IRFB9N60A,
SiHFB9N60A
O-220
O-220
IRFB9N60APbF
12-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N60A,
SiHFB9N60A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N60A,
SiHFB9N60A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N60A,
SiHFB9N60A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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AN609
Abstract: IRFB9N60A SiHFB9N60A
Text: IRFB9N60A_RC, SiHFB9N60A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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IRFB9N60A
SiHFB9N60A
AN609,
16-Apr-10
AN609
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N60A,
SiHFB9N60A
2002/95/EC
O-220AB
O-220ABtrademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N60A,
SiHFB9N60A
2002/95/EC
O-220AB
O-220ABtrademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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