SIHA25N50E Search Results

SIHA25N50E Price and Stock

Filter by Manufacturer


Vishay Intertechnologies SIHA25N50E-E3 MOSFETs 500V Vds 30V Vgs TO-220 FULLPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SIHA25N50E-E3		387			1 $3.96 10 $3.96 100 $1.88 1000 $1.43 10000 $1.43	Buy Now
TTI	SIHA25N50E-E3	Tube			1,000	1 - 10 - 100 - 1000 $1.47 10000 $1.44	Buy Now
Vishay Intertechnologies SIHA25N50E-GE3 MOSFETs TO220 500V 26A N-CH MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SIHA25N50E-GE3					1 - 10 - 100 - 1000 $1.47 10000 $1.43	Get Quote
TTI	SIHA25N50E-GE3	Reel			1,000	1 - 10 - 100 - 1000 $1.53 10000 $1.44	Buy Now

SIHA25N50E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHA25N50E-E3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 26A TO-220FP		Original	PDF

SIHA25N50E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses	Original	PDF	SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses	Original	PDF	SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses	Original	PDF	SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Product Group: Vishay Siliconix, High-Voltage MOSFETs / September 2014 Author: Philip Zuk Tel: +1 408 970-5298 E-mail: [email protected] SiHx25N50E 500 V E Series N-Channel Power MOSFETs Product Benefits: •      Continued high performance low switching and	Original	PDF	SiHx25N50E O-220 SiHP25N50E O247AC SiHG25N50E SiHA25N50E
Device Application Note AN849 Abstract: AN849 planar mosfet Text: VISHAY SILICONIX www.vishay.com MOSFETs Device Application Note AN849 Power MOSFET Basics Understanding Superjunction Technology by Sanjay Havanur and Philip Zuk Power MOSFETs based on superjunction technology have become the industry norm in high-voltage switching	Original	PDF	AN849 Device Application Note AN849 AN849 planar mosfet