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Vishay Intertechnologies SIE850DF-T1-E3 MOSFETs 30V 164A 104W 2.5mohm @ 10V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SIE850DF-T1-E3					1 - 10 - 100 - 1000 - 10000 $1.61	Get Quote
Vishay Intertechnologies SIE850DF-T1-GE3 MOSFETs 30V 164A 104W 2.5mohm @ 10V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SIE850DF-T1-GE3					1 - 10 - 100 - 1000 - 10000 $1.61	Get Quote

SIE850DF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling	Original	PDF	SiE850DF 2002/95/EC 11-Mar-11
72511 Abstract: SiE850DF Text: New Product SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package	Original	PDF	SiE850DF 08-Apr-05 72511
SiE850DF Abstract: 72511 Text: New Product SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package	Original	PDF	SiE850DF 18-Jul-08 72511
Untitled Abstract: No abstract text available Text: SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling	Original	PDF	SiE850DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
6697 Abstract: 3882 power 4422 MOSFET siliconix 4422 AN609 84422 SiE850DF Text: SiE850DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	SiE850DF AN609 05-Nov-07 6697 3882 power 4422 MOSFET siliconix 4422 84422
Untitled Abstract: No abstract text available Text: SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling	Original	PDF	SiE850DF 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
S-80744 Abstract: SiE850DF Text: SPICE Device Model SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	SiE850DF 18-Jul-08 S-80744
Untitled Abstract: No abstract text available Text: SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling	Original	PDF	SiE850DF 2002/95/EC 18-Jul-08