si7780
Abstract: No abstract text available
Text: New Product Si7780DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 40 0.0055 at VGS = 10 V 60 36 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS
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Si7780DP
Si7780DP-T1-GE3
11-Mar-11
si7780
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Untitled
Abstract: No abstract text available
Text: New Product Si7780DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 40 0.0055 at VGS = 10 V 60 36 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS
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Si7780DP
Si7780DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7780DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7780DP
S-81924-Rev.
25-Aug-08
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circuit 4466
Abstract: AN609
Text: Si7780DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,
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Si7780DP
AN609,
10-Jun-08
circuit 4466
AN609
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si7780DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 40 0.0055 at VGS = 10 V 60 36 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS
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Original
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Si7780DP
Si7780DP-T1-GE3
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7780DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Original
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Si7780DP
18-Jul-08
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PDF
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