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    SI6968 Price and Stock

    Vishay Siliconix SI6968BEDQ-T1-E3

    MOSFET 2N-CH 20V 5.2A 8TSSOP
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    DigiKey SI6968BEDQ-T1-E3 Digi-Reel 5,014 1
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    SI6968BEDQ-T1-E3 Cut Tape 5,014 1
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    SI6968BEDQ-T1-E3 Reel 3,000 3,000
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    Vishay Siliconix SI6968BEDQ-T1-GE3

    MOSFET 2N-CH 20V 5.2A 8TSSOP
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    DigiKey SI6968BEDQ-T1-GE3 Cut Tape 2,692 1
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    SI6968BEDQ-T1-GE3 Digi-Reel 2,692 1
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    SI6968BEDQ-T1-GE3 Reel 3,000
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    New Advantage Corporation SI6968BEDQ-T1-GE3 3,000 1
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    Vishay Intertechnologies SI6968BEDQ-T1-E3

    DUAL N-CH 2.5-V (G-S) COMMON DRAIN ESD - Tape and Reel (Alt: SI6968BEDQ-T1-E3)
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    Avnet Americas SI6968BEDQ-T1-E3 Reel 3,000
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    Verical SI6968BEDQ-T1-E3 3,000 3,000
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    Arrow Electronics SI6968BEDQ-T1-E3 3,000 17 Weeks 3,000
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    Newark SI6968BEDQ-T1-E3 Cut Tape 3,000
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    TTI SI6968BEDQ-T1-E3 Reel 12,000 3,000
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    EBV Elektronik SI6968BEDQ-T1-E3 14 Weeks 3,000
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    Vishay Intertechnologies SI6968BEDQ-T1-GE3

    DUAL N-CH 2.5-V (G-S) COMMON DRAIN ESD - Tape and Reel (Alt: SI6968BEDQ-T1-GE3)
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    Avnet Americas SI6968BEDQ-T1-GE3 Reel 3,000
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    Verical SI6968BEDQ-T1-GE3 3,000 3,000
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    SI6968BEDQ-T1-GE3 849 20
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    Arrow Electronics SI6968BEDQ-T1-GE3 3,000 13 Weeks 3,000
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    SI6968BEDQ-T1-GE3 Cut Strips 849 13 Weeks 1
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    Newark SI6968BEDQ-T1-GE3 Cut Tape 6,170 1
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    SI6968BEDQ-T1-GE3 Reel 3,000
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    TTI SI6968BEDQ-T1-GE3 Reel 9,000 3,000
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    Avnet Asia SI6968BEDQ-T1-GE3 15 Weeks 3,000
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    EBV Elektronik SI6968BEDQ-T1-GE3 14 Weeks 3,000
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    Vishay Siliconix SI6968BEDQ-T1-E3/BKN

    N-CH 2.5-V (G-S) MOSFET COMMONDRAIN ESD | Siliconix / Vishay SI6968BEDQ-T1-E3/BKN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI6968BEDQ-T1-E3/BKN Bulk 1
    • 1 $1.04
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    • 100 $0.89
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    Find more SI6968 price and stock on Findchips.com

    SI6968 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI6968ADQ Vishay Siliconix MOSFETs Original PDF
    SI6968BEDQ Kexin Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection Original PDF
    SI6968BEDQ Vishay Siliconix MOSFETs Original PDF
    SI6968BEDQ_RC Vishay Siliconix R-C Thermal Model Parameters Original PDF
    SI6968BEDQ-T1 Vishay Telefunken Original PDF
    SI6968BEDQ-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 5.2A 8TSSOP Original PDF
    SI6968BEDQ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 5.2A 8-TSSOP Original PDF
    Si6968DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si6968DQ Vishay Intertechnology N-Channel 2.5-V (G-S) Battery Switch Original PDF
    SI6968DQ Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch Original PDF
    Si6968DQ SPICE Device Model Vishay Dual N-Channel 2.5-V (G-S) Rated MOSFET Common Drain Original PDF
    Si6968EDQ-REVA Vishay Intertechnology Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection Original PDF
    SI6968EDQ-REVA Vishay Telefunken Dual N-Ch 2.5-V (G-S) Common Drain, ESD Protection Original PDF

    SI6968 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si6968ADQ

    Abstract: No abstract text available
    Text: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si6968ADQ 08-Apr-05

    Si6968ADQ

    Abstract: No abstract text available
    Text: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si6968ADQ S-99586--Rev. 20-Dec-99

    Si6968BEDQ

    Abstract: Dual Gate mosfet spice
    Text: SPICE Device Model Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application


    Original     		PDF Si6968BEDQ S-71534Rev. 30-Jul-07 Dual Gate mosfet spice

    Si6968BEDQ

    Abstract: Si6968BEDQ-T1
    Text: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5 D D TSSOP-8


    Original     		PDF Si6968BEDQ Si6968BEDQ-T1 S-31362--Rev. 30-Jun-03

    Untitled

    Abstract: No abstract text available
    Text: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5 D D TSSOP-8


    Original     		PDF Si6968BEDQ Si6968BEDQ-T1 08-Apr-05

    SI6968BEDQ-T1-E3

    Abstract: si6968edq-t1-reva Si6968BEDQ Si6968BEDQ-T1 Si6968EDQ-REVA SI6968EDQ-T1
    Text: Specification Comparison Vishay Siliconix Si6968BEDQ vs. Si6968EDQ-REVA Description: Dual N-Channel, 2.5 V G-S MOSFET Common Drain with ESD Protection Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6968BEDQ-T1 Replaces Si6968EDQ-T1-REVA


    Original     		PDF Si6968BEDQ Si6968EDQ-REVA Si6968BEDQ-T1 Si6968EDQ-T1-REVA Si6968BEDQ-T1-E3 09-Nov-06 SI6968EDQ-T1

    Untitled

    Abstract: No abstract text available
    Text: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • Halogen-free Option Available • TrenchFET Power MOSFETs


    Original     		PDF Si6968BEDQ Si6968BEDQ-T1 Si6968BEDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    7408

    Abstract: 7408 and AN609 Si6968BEDQ si6968 1-50487 235742 112274
    Text: Si6968BEDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si6968BEDQ AN609 11-Jul-07 7408 7408 and si6968 1-50487 235742 112274

    Si6968ADQ

    Abstract: No abstract text available
    Text: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si6968ADQ 18-Jul-08

    Si6968BEDQ

    Abstract: Si6968BEDQ-T1
    Text: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • Halogen-free Option Available • TrenchFET Power MOSFETs


    Original     		PDF Si6968BEDQ Si6968BEDQ-T1 Si6968BEDQ-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • TrenchFET Power MOSFET • ESD Protected: 3000 V Pb-free


    Original     		PDF Si6968BEDQ Si6968BEDQ-T1 Si6968BEDQ-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5 D D TSSOP-8


    Original     		PDF Si6968EDQ-REVA S-05456--Rev. 21-Jan-02

    Si6968BEDQ

    Abstract: Si6968BEDQ-T1
    Text: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • Halogen-free Option Available • TrenchFET Power MOSFETs


    Original     		PDF Si6968BEDQ Si6968BEDQ-T1 Si6968BEDQ-T1-GE3 11-Mar-11

    Si6968DQ

    Abstract: No abstract text available
    Text: Si6968DQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.022 @ VGS = 4.5 V "6.5 0.030 @ VGS = 2.5 V "5.5 D D TSSOP-8 D 1 S1 2 S1 G1 8 D 7 S2 3 6 S2 4 5 G2 D Si6968DQ G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si6968DQ S-56943--Rev. 02-Nov-98

    Si6968DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6968DQ Vishay Siliconix Dual N-Channel 2.5-V G-S Rated MOSFET Common Drain CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6968DQ 10-Apr-02

    23741

    Abstract: AN609 Si6968ADQ
    Text: Si6968ADQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si6968ADQ AN609 11-Jul-07 23741

    Si6968DQ

    Abstract: No abstract text available
    Text: Si6968DQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.022 @ VGS = 4.5 V "6.5 0.030 @ VGS = 2.5 V "5.5 D D TSSOP-8 D 1 S1 2 S1 G1 8 D 7 S2 3 6 S2 4 5 G2 D Si6968DQ G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si6968DQ 18-Jul-08

    74233

    Abstract: Si6968ADQ Si6968DQ SI6968DQT1
    Text: Specification Comparison Vishay Siliconix Si6968ADQ vs. Si6968DQ Description: Package: Pin Out: N-Channel, 2.5 V G-S BATTERY SWITCH TSSOP-8 Identical Part Number Replacements Si6968ADQ-T1-E3 Replaces Si6968DQ-T1-E3 Si6968ADQ-T1 Replaces Si6968DQ-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si6968ADQ Si6968DQ Si6968ADQ-T1-E3 Si6968DQ-T1-E3 Si6968ADQ-T1 Si6968DQ-T1 74233 SI6968DQT1

    Si6968EDQ-REVA

    Abstract: No abstract text available
    Text: Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5 D D TSSOP-8


    Original     		PDF Si6968EDQ-REVA S-05796--Rev. 25-Feb-02

    Untitled

    Abstract: No abstract text available
    Text: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 8 D 7 S2 3 6 S2 4 5 G2 D 1 S1 2 S1 G1 D Si6968ADQ G1 G2 Top View S1 S2 N-Channel MOSFET


    Original     		PDF Si6968ADQ S-99586--Rev. 20-Dec-99

    Si6968EDQ-REVA

    Abstract: No abstract text available
    Text: Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5


    Original     		PDF Si6968EDQ-REVA S-21454--Rev. 19-Aug-02

    Si6968EDQ-REVA

    Abstract: No abstract text available
    Text: Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5


    Original     		PDF Si6968EDQ-REVA 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si6968EDQ-REVA Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES D TrenchFETr Power MOSFET D ESD Protected: 3000 V PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.022 @ VGS = 4.5 V 6.5 0.030 @ VGS = 2.5 V 5.5


    Original     		PDF Si6968EDQ-REVA 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SI6968DQ VISHAY Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 r DS(ON) Id (& ) (A) 0.022 @ VGS = 4.5 V ±6 .5 0.030 @ VGS = 2.5 V ±5 .5 D D N-Channel MOSFET N-Channel MOSFET TSSOP-8 D Si D Si6968DQ S2 Si S2 Gi g2 Gi Top View


    OCR Scan     		PDF SI6968DQ Si6968DQ S-56943â 02-Nov-98