s1124
Abstract: No abstract text available
Text: SPICE Device Model Si5999EDU www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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Si5999EDU
11-Mar-11
s1124
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77503
Abstract: No abstract text available
Text: Si5999EDU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si5999EDU
AN609,
7690u
1847m
5265m
5610m
1835m
0133m
6339u
77503
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SILICONIX MARKING si5999edu-t1-ge3
Abstract: No abstract text available
Text: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5999EDU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SILICONIX MARKING si5999edu-t1-ge3
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Si570
Abstract: Si571 reg137 Si598 Si570 an334 155.520000 Si599 AN104 AN141 AN198
Text: AN334 Si57 X /598/599 ANSI C R E F E R E N CE D E S I G N WI T H O P T I O N A L N O N - VO L A T I L E O UT P UT F R E Q UE N C Y 1. Introduction Because each Si570/Si571/Si598/Si599 programmable XO/VCXO has a unique crystal frequency, it is necessary to perform the frequency conversion calculations for every new desired output frequency for each programmable
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AN334
Si570/Si571/Si598/Si599
Si570
Si571
reg137
Si598
Si570 an334
155.520000
Si599
AN104
AN141
AN198
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Untitled
Abstract: No abstract text available
Text: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5999EDU
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5997DU
2002/95/EC
Si5997trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI5999EDU
Abstract: SILICONIX MARKING si5999edu-t1-ge3
Text: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5999EDU
2002/95/EC
18-Jul-08
SILICONIX MARKING si5999edu-t1-ge3
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Untitled
Abstract: No abstract text available
Text: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5997DU
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si5997DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si5997DU
AN609,
2791u
1537m
4975m
9087m
4058m
1942m
1471u
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Untitled
Abstract: No abstract text available
Text: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5997DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5999EDU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5999EDU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5997DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si5997
Abstract: S11-0403 Si5997DU
Text: SPICE Device Model Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si5997DU
18-Jul-08
si5997
S11-0403
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Si5997DU
Abstract: si5997
Text: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5997DU
2002/95/EC
Si5997hay
11-Mar-11
si5997
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si5999
Abstract: SILICONIX MARKING si5999edu-t1-ge3
Text: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5999EDU
2002/95/EC
11-Mar-11
si5999
SILICONIX MARKING si5999edu-t1-ge3
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SILICONIX MARKING si5999edu-t1-ge3
Abstract: No abstract text available
Text: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5999EDU
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SILICONIX MARKING si5999edu-t1-ge3
|
Untitled
Abstract: No abstract text available
Text: V i s h ay I n te r tec h n olo g y, I n c . Power mosfets Powe rPA K ChipFET® M O S F E ts Product Sheet 3 W Maximum Power Dissipation in Compact 3 mm x 1.8 mm Footprint Area: Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints
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VMN-PT0102-1007
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si570
Abstract: Si552 1.8 GHz SAW oscillator ADC 10 Ghz Si571 Si534 Si550 SI595 375 07 Si599
Text: Frequency Control Solutions THE NEW STANDARD IN FREQUENCY CONTROL FEATURES • Wide range of operation: 10 MHz to 1.4 GHz • Two week lead time for samples pf any frequency • Superior jitter performance: <0.3 psRMS typ • Any frequency, quad, dual and single
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SOL-FRE-2010B
si570
Si552
1.8 GHz SAW oscillator
ADC 10 Ghz
Si571
Si534
Si550
SI595
375 07
Si599
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J11-J17
Abstract: SiLabs 570 Si571 Si570 si514 SI510
Text: Si5xx/514/570-PROG-EVB S i 5 1 4 / 5 7 0 / 5 7 1 / 5 9 8 / 5 9 9 A NY - F R E Q UE N C Y I 2 C PROGRAMMABLE XO/VCXO EVALUATION BOARD Description Features The Silicon Laboratories Si514/570/571/598/599 evaluation kit contains the hardware and software needed for evaluation of the Si514/570/571/598/599
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Si5xx/514/570-PROG-EVB
Si514/570/571/598/599
Si514/570/571/
Si571/
J11-J17
SiLabs 570
Si571
Si570
si514
SI510
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Si542
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline PowerPAK ChipFET® Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints Key Benefits • Advanced thermal performance in a compact 3 mm by 1.8 mm footprint
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Si5936DU
Si5944DU
Si5999EDU
Si5997DU
Si5517DU
VMN-PT0102-1402
Si542
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SI570
Abstract: virtex-7 virtex7 Si571 Si598 Si5324 Spartan-6 FPGA Si5368 Si599 VIRTEX-6
Text: Silicon Labs and Altera/Xilinx Timing Solutions Cross-Reference Guide Ideal for Clocking FPGAs • Multiple Altera and Xilinx FPGA reference designs Combination of frequency flexibility and jitter performance ideal for FPGAs High power supply noise rejection minimizes impact
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Si53x,
Si55x,
Si57x,
Si59x)
10MHz
Si53x/7x
Si55x)
OC-48/192
Si5338
SI570
virtex-7
virtex7
Si571
Si598
Si5324
Spartan-6 FPGA
Si5368
Si599
VIRTEX-6
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Silabs
Abstract: si597 SI598
Text: Si 5 97 Q UAD F R E Q U E N C Y VO L TAG E - C O N T R O L L E D C RYSTAL O SCILLATOR V C X O 1 0 TO 810 MH Z Features Available with any-frequency output from 10 to 810 MHz 4 selectable output frequencies 3rd generation DSPLL with superior jitter performance
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Si5602
OC-3/12/48)
Silabs
si597
SI598
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v0615a
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Stationary Computing Servers 4 Embedded Systems 5 Solid-State Discs SSDs 6 UPS 7
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J-STD-020
SC-70
WSL1206
VMN-MS6761-1212
v0615a
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