Untitled
Abstract: No abstract text available
Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated
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Si5475BDC
Si5475BDC-T1-E3
Si5475BDC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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diode 1334
Abstract: transistor 5457 AN609 Si5475BDC 73816
Text: Si5475BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5475BDC
AN609
01-Mar-06
diode 1334
transistor 5457
73816
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Si5475BDC
Abstract: Si5475BDC-T1-E3
Text: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • TrenchFET Power MOSFET: 1.8-V Rated Qg (Typ) RoHS
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Si5475BDC
Si5475BDC-T1--E3
08-Apr-05
Si5475BDC-T1-E3
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1206 8 ChipFET
Abstract: No abstract text available
Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated
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Si5475BDC
Si5475BDC-T1-E3
Si5475BDC-T1-GE3
11-Mar-11
1206 8 ChipFET
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Si5475BDC-T1-GE3
Abstract: Si5475BDC Si5475BDC-T1-E3
Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated
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Si5475BDC
Si5475BDC-T1-E3
Si5475BDC-T1-GE3
18-Jul-08
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SI5475BDC
Abstract: No abstract text available
Text: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET PRODUCT SUMMARY −12 FEATURES rDS(on) (W) ID (A)a 0.028 @ VGS = −4.5 V −6 0.039 @ VGS = −2.5 V −6 0.054 @ VGS = −1.8 V −6 VDS (V) Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated
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Si5475BDC
Si5475BDC-T1--E3
S-50939--Rev.
09-May-05
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Untitled
Abstract: No abstract text available
Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated
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Si5475BDC
Si5475BDC-T1-E3
Si5475BDC-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si5475BDC
Abstract: No abstract text available
Text: SPICE Device Model Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5475BDC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET PRODUCT SUMMARY −12 FEATURES rDS(on) (W) ID (A)a 0.028 @ VGS = −4.5 V −6 0.039 @ VGS = −2.5 V −6 0.054 @ VGS = −1.8 V −6 VDS (V) Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated
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Si5475BDC
Si5475BDC-T1--E3
08-Apr-05
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Si5475BDC
Abstract: Si5475BDC-T1-E3
Text: New Product Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 VDS (V) - 12 • TrenchFET Power MOSFET: 1.8 V Rated Qg (Typ.) RoHS
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Si5475BDC
Si5475BDC-T1-E3
08-Apr-05
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Si5475BDC
Abstract: Si5475BDC-T1-E3
Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated
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Si5475BDC
Si5475BDC-T1-E3
Si5475BDC-T1-GE3
11-Mar-11
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Si5475BDC
Abstract: No abstract text available
Text: SPICE Device Model Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5475BDC
S-50905Rev.
16-May-05
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SI5475DDC-T1-GE3
Abstract: Si5475BDC Si5475BDC-T1-E3
Text: Specification Comparison Vishay Siliconix Si5475DDC vs. Si5475BDC Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5475DDC-T1-GE3 replaces Si5475BDC-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
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Si5475DDC
Si5475BDC
Si5475DDC-T1-GE3
Si5475BDC-T1-E3
06-Aug-08
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74119
Abstract: Si5475BDC Si5475BDC-T1-E3 Si5475DC Si5475DC-T1
Text: Specification Comparison Vishay Siliconix Si5475BDC vs. Si5475DC Description: P-Channel, 12 V D-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5475BDC-T1-E3 Replaces Si5475DC-T1-E3 Si5475BDC-T1 Replaces Si5475DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
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Si5475BDC
Si5475DC
Si5475BDC-T1-E3
Si5475DC-T1-E3
Si5475BDC-T1
Si5475DC-T1
74119
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SI2333DS-T1-E3
Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
Text: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)
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SI7415DN-T1-E3
SI7107DN-T1-E3
SI7913DN-T1-E3
SI7414DN-T1-E3
SI7810DN-T1-E3
70026365Single
SI9986CY-T1-E3
SI9986DY-T1-E3
SI9987DY-T1-E3
SI2333DS-T1-E3
SI2305DS-T1-E3
Si2333
Si2302ADS-T1-E3
SUP75N06-08-E3
si4486ey-t1-e3
SUP60N06-18-E3
SI2308BDS-T1-E3
SI4488DY-T1-E3
2N7002K
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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