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    SI4838BDY Price and Stock

    Vishay Siliconix SI4838BDY-T1-GE3

    MOSFET N-CH 12V 34A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4838BDY-T1-GE3 Cut Tape 7,290 1
    • 1 $2.17
    • 10 $1.389
    • 100 $2.17
    • 1000 $0.68962
    • 10000 $0.68962
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    SI4838BDY-T1-GE3 Digi-Reel 7,290 1
    • 1 $2.17
    • 10 $1.389
    • 100 $2.17
    • 1000 $0.68962
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    SI4838BDY-T1-GE3 Reel 5,000 2,500
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    ES Components SI4838BDY-T1-GE3
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    New Advantage Corporation SI4838BDY-T1-GE3 2,500 1
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    Vishay Intertechnologies SI4838BDY-T1-GE3

    N-CHANNEL 12-V (D-S) MOSFET - Tape and Reel (Alt: SI4838BDY-T1-GE3)
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    Avnet Americas SI4838BDY-T1-GE3 Reel 2,500 18 Weeks 2,500
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    Mouser Electronics SI4838BDY-T1-GE3 4,547
    • 1 $2.07
    • 10 $1.34
    • 100 $0.918
    • 1000 $0.677
    • 10000 $0.587
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    Verical SI4838BDY-T1-GE3 10,000 2,500
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    SI4838BDY-T1-GE3 2,500 2,500
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    SI4838BDY-T1-GE3 2,500 2,500
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    Arrow Electronics SI4838BDY-T1-GE3 10,000 18 Weeks 2,500
    • 1 $0.563
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    • 100 $0.563
    • 1000 $0.563
    • 10000 $0.3128
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    SI4838BDY-T1-GE3 2,500 18 Weeks 2,500
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    Newark SI4838BDY-T1-GE3 Bulk 3,404 1
    • 1 $1.69
    • 10 $1.41
    • 100 $1.12
    • 1000 $0.967
    • 10000 $0.967
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    Bristol Electronics SI4838BDY-T1-GE3 26
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    TTI SI4838BDY-T1-GE3 Reel 10,000 2,500
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    EBV Elektronik SI4838BDY-T1-GE3 22 Weeks 2,500
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    Vishay Intertechnologies SI4838BDY-T1-GE3.

    Mosfet, N Channel, 12V, 34A, Soic-8, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:34A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:5.7W Rohs Compliant: Yes |Vishay SI4838BDY-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI4838BDY-T1-GE3. Reel 2,500 2,500
    • 1 $0.588
    • 10 $0.588
    • 100 $0.588
    • 1000 $0.588
    • 10000 $0.588
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    Vishay Intertechnologies SI4838DY-T1-E3

    MOSFETs RECOMMENDED ALT SI48
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SI4838DY-T1-E3 Reel 7,500 2,500
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    • 10000 $1.38
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    Others SI4838BDYT1GE3

    AVAILABLE EU
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    ComSIT USA SI4838BDYT1GE3 2,500
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    Find more SI4838BDY price and stock on Findchips.com

    SI4838BDY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4838BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 34A 8-SOIC Original PDF

    SI4838BDY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4838BDY

    Abstract: 00031 SI4838DY-T1-E3 Si4838DY
    Text: Specification Comparison Vishay Siliconix Si4838BDY vs. Si4838DY Description: Package: Pin Out: N-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4838BDY-T1-GE3 replaces Si4838DY-T1-E3 Si4838BDY-T1-GE3 replaces Si4838DY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4838BDY Si4838DY Si4838BDY-T1-GE3 Si4838DY-T1-E3 Si4838DY-T1-GE3 04-Nov-08 00031

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 ID (A)a RDS(on) (Ω) 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4838BDY Si4838BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4838BDY

    Abstract: 68964
    Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4838BDY Si4838BDY-T1-GE3 11-Mar-11 68964

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4838BDY Si4838BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    82546

    Abstract: Si4838BDY
    Text: SPICE Device Model Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si4838BDY 18-Jul-08 82546

    m 51473

    Abstract: AN609 Si4838BDY
    Text: Si4838BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4838BDY AN609, 02-Oct-08 m 51473 AN609

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4838BDY Si4838BDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4838BDY www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4838BDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4838BDY Si4838BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4838BDY

    Abstract: No abstract text available
    Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4838BDY Si4838BDY-T1-GE3 18-Jul-08

    SILEGO

    Abstract: FET marking code MARKING CODE FET SLG55031V
    Text: SLG55031/032/033 GreenFETTM High Voltage Gate Driver Features Applications • Drain Voltage Range 0.7V to 1.5V • Low Transient Load Switching • Controlled Load Discharge Rate • Personal computers and Servers • Controlled Turn on Slew Rate • Hot Plugging Applications


    Original     		PDF SLG55031/032/033 SLG5503x SLG55031 SLG55031/32/33 SILEGO FET marking code MARKING CODE FET SLG55031V

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477