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Vishay Siliconix SI4362BDY-T1-E3 MOSFET N-CH 30V 29A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4362BDY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.075	Buy Now
Vishay Siliconix SI4362BDY-T1-GE3 MOSFET N-CH 30V 29A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4362BDY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.075	Buy Now
Vishay Intertechnologies SI4362BDY-T1-E3 MOSFETs 30V 19.8A 6.6W
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Mouser Electronics	SI4362BDY-T1-E3					1 - 10 - 100 - 1000 - 10000 $1.11	Get Quote
Vishay Intertechnologies SI4362BDY-T1-GE3 MOSFETs 30V 19.8A 6.6W 4.6mohm @ 10V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SI4362BDY-T1-GE3					1 - 10 - 100 - 1000 - 10000 $1.11	Get Quote

SI4362BDY Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4362BDY		Vaishali Semiconductor	N-Channel 30-V (D-S) Reduced Qgd, Fast Switching WFET		Original	PDF
SI4362BDY-RC		Vishay Siliconix	R-C Thermal Model Parameters		Original	PDF
SI4362BDY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 29A 8-SOIC		Original	PDF
SI4362BDY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 29A 8-SOIC		Original	PDF

SI4362BDY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous	Original	Si4362BDY Si4362BDY-T1 08-Apr-05	PDF
73832 Abstract: 3203 MOSFET a 4503 data sheet A 4503 4503 MOSFET AN609 Si4362BDY Text: Si4362BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4362BDY AN609 03-Mar-06 73832 3203 MOSFET a 4503 data sheet A 4503 4503 MOSFET	PDF
74137 Abstract: datasheet 74137 Si4362BDY Text: SPICE Device Model Si4362BDY Vishay Siliconix N-Channel 30-V D-S Reduced Qgd, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4362BDY S-52211Rev. 24-Oct-05 74137 datasheet 74137	PDF
Untitled Abstract: No abstract text available Text: Si4362BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 19.8 0.0054 at VGS = 4.5 V 18.2 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	Si4362BDY Si4362BDY-T1-E3 Si4362BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si4362BDY Abstract: Si4362BDY-T1-E3 "Package SO-8" Si4362DY Si4362DY-T1 Si4362DY-T1-E3 Text: Specification Comparison Vishay Siliconix Si4362BDY vs. Si4362DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4362BDY-T1-E3 Replaces Si4362DY-T1-E3 Si4362BDY-T1-E3 Replaces Si4362DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	Si4362BDY Si4362DY Si4362BDY-T1-E3 Si4362DY-T1-E3 Si4362DY-T1 31-Oct-06 "Package SO-8"	PDF
Si4362BDY Abstract: TB-17 Text: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous	Original	Si4362BDY Si4362BDY-T1 52011--Rev. TB-17	PDF
TB-17 Abstract: Si4362BDY Si4362BDY-T1-E3 Text: Si4362BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 19.8 0.0054 at VGS = 4.5 V 18.2 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	Si4362BDY Si4362BDY-T1-E3 Si4362BDY-T1-GE3 18-Jul-08 TB-17	PDF
74137 Abstract: datasheet 74137 Si4362BDY Text: SPICE Device Model Si4362BDY Vishay Siliconix N-Channel 30-V D-S Reduced Qgd, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4362BDY 18-Jul-08 74137 datasheet 74137	PDF
Untitled Abstract: No abstract text available Text: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous	Original	Si4362BDY Si4362BDY-T1 18-Jul-08	PDF
q406 transistor Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS	PDF