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ASI-EZ ASI431020 Thermocouple Terminal Block, DIN
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DigiKey	ASI431020					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI4310BDY-T1-E3 MOSFET 2N-CH 30V 7.5A 14SOIC
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DigiKey	SI4310BDY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.55	Buy Now

SI4310 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI43-100		Xinwang Electronics	SMT Power Inductor		Original	PDF
SI43-101		Xinwang Electronics	SMT Power Inductor		Original	PDF
SI4310BDY-T1-E3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 7.5A 14SOIC		Original	PDF
Si4310DY		Vishay Intertechnology	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode		Original	PDF
Si4310DY SPICE Device Model		Vishay	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode		Original	PDF

SI4310 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Si4310DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V	Original	PDF	Si4310DY SO-14 S-20828--Rev. 17-Jun-02
SI4310 Abstract: Si4310BDY Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si4310BDY 2002/95/EC SO-14 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI4310
Si4310DY Abstract: No abstract text available Text: SPICE Device Model Si4310DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4310DY 18-Jul-08
CH1155 Abstract: Si4310DY Text: SPICE Device Model Si4310DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4310DY S-51868Rev. 12-Aug-05 CH1155
max3572 Abstract: No abstract text available Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si4310BDY 2002/95/EC SO-14 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 max3572
Si4310BDY Abstract: No abstract text available Text: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14	Original	PDF	Si4310BDY SO-14 08-Apr-05
Si4310BDY Abstract: No abstract text available Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si4310BDY 2002/95/EC SO-14 11-Mar-11
Untitled Abstract: No abstract text available Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si4310BDY 2002/95/EC SO-14 18-Jul-08
Si4310BDY Abstract: No abstract text available Text: SPICE Device Model Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4310BDY 18-Jul-08
CI 3060 elsys Abstract: Si4310BDY Text: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14	Original	PDF	Si4310BDY SO-14 18-Jul-08 CI 3060 elsys
Si4310DY Abstract: No abstract text available Text: SPICE Device Model Si4310DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4310DY 0-to-10V 04-Sep-02
Si4310BDY Abstract: No abstract text available Text: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si4310BDY 2002/95/EC SO-14 11-Mar-11
Untitled Abstract: No abstract text available Text: SMT Power Inductor SI 43 Type Features RoHS compliant. Low profile 2.5mm max.height SMD type. Unshielded. Self-leads,suitable for high density mounting. High energy storage and low DCR Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,	Original	PDF	098Max 100KHz SI43-1R0L SI43-1R2L SI43-1R5L SI43-1R8L SI43-2R2L 100uH.