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Vishay Siliconix SI4214DY-T1-GE3 MOSFET 2N-CH 30V 8.5A 8SOIC
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DigiKey	SI4214DY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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	SI4214DY-T1-GE3	Digi-Reel			1	1 $0.66 10 $0.66 100 $0.66 1000 $0.66 10000 $0.66	Buy Now
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ComSIT USA	SI4214DYT1GE3		2,200			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI4214DY Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4214DY-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.5A 8-SOIC		Original	PDF

SI4214DY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 8.5 0.028 at VGS = 4.5 V 7.8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4214DY 2002/95/EC Si4214DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si4214DY Abstract: 785 spice Text: SPICE Device Model Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	Si4214DY 18-Jul-08 785 spice
MOSFET 2301 Abstract: 18-1122 8439 c 5929 transistor AN609 Text: Si4214DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	PDF	Si4214DY AN609, 06-Feb-09 MOSFET 2301 18-1122 8439 c 5929 transistor AN609
Untitled Abstract: No abstract text available Text: New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 8.5 0.028 at VGS = 4.5 V 7.8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4214DY 2002/95/EC Si4214DY-T1-GE3 11-Mar-11
SI4214DY Abstract: No abstract text available Text: New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 8.5 0.028 at VGS = 4.5 V 7.8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4214DY 2002/95/EC Si4214DY-T1-GE3 18-Jul-08
diode 18B Abstract: No abstract text available Text: New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 8.5 0.028 at VGS = 4.5 V 7.8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4214DY 2002/95/EC Si4214DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 diode 18B
Untitled Abstract: No abstract text available Text: DEMO MANUAL DC1555C LTC4365/LTC4365-1: Overvoltage, Undervoltage and Reverse Supply Protection Controller Description Demonstration circuit DC1555C is intended to demonstrate the performance of the LTC4365 and LTC4365-1 Undervoltage, Overvoltage and Reverse Supply Protection	Original	PDF	DC1555C LTC4365/LTC4365-1: DC1555C LTC4365 LTC4365-1 4365/LTC4365-1 dc1555cfb