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    SI3407DV Search Results

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    SI3407DV Price and Stock

    Vishay Siliconix SI3407DV-T1-GE3

    MOSFET P-CH 20V 8A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3407DV-T1-GE3 Cut Tape 9,177 1
    • 1 $0.76
    • 10 $0.473
    • 100 $0.76
    • 1000 $0.20928
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    SI3407DV-T1-GE3 Digi-Reel 9,177 1
    • 1 $0.76
    • 10 $0.473
    • 100 $0.76
    • 1000 $0.20928
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    New Advantage Corporation SI3407DV-T1-GE3 9,000 1
    • 1 -
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    • 10000 $0.1862
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    Vishay Siliconix SI3407DV-T1-BE3

    MOSFET P-CH 20V 7.5A/8A 6TSOP
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    DigiKey SI3407DV-T1-BE3 Cut Tape 906 1
    • 1 $0.76
    • 10 $0.473
    • 100 $0.76
    • 1000 $0.20928
    • 10000 $0.20928
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    SI3407DV-T1-BE3 Digi-Reel 906 1
    • 1 $0.76
    • 10 $0.473
    • 100 $0.76
    • 1000 $0.20928
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    SI3407DV-T1-BE3 Reel 3,000
    • 1 -
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    • 10000 $0.17954
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    Vishay Siliconix SI3407DV-T1-E3

    MOSFET P-CH 20V 8A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3407DV-T1-E3 Reel 3,000
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    Vishay Intertechnologies SI3407DV-T1-GE3

    Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R
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    Verical SI3407DV-T1-GE3 6,000 3,000
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    SI3407DV-T1-GE3 3,000 3,000
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    • 10000 $0.1455
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    Mouser Electronics SI3407DV-T1-GE3 58,398
    • 1 $0.45
    • 10 $0.305
    • 100 $0.224
    • 1000 $0.181
    • 10000 $0.137
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    Arrow Electronics SI3407DV-T1-GE3 6,000 17 Weeks 3,000
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    SI3407DV-T1-GE3 3,000 17 Weeks 3,000
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    • 10000 $0.1449
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    SI3407DV-T1-GE3 Cut Strips 3 17 Weeks 1
    • 1 $0.1373
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    • 100 $0.1373
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    EBV Elektronik SI3407DV-T1-GE3 18 Weeks 3,000
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    Farnell SI3407DV-T1-GE3 Cut Tape 3 Weeks, 1 Days 1
    • 1 £0.36
    • 10 £0.232
    • 100 £0.19
    • 1000 £0.1
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    SI3407DV-T1-GE3 Reel 3 Weeks, 1 Days 100
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    • 100 £0.19
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    TTI Europe SI3407DV-T1-GE3 6,000 3,000
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    • 10000 €0.138
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    Avnet Americas SI3407DV-T1-GE3 Ammo Pack 18 Weeks, 1 Days 1
    • 1 $0.35
    • 10 $0.291
    • 100 $0.227
    • 1000 $0.227
    • 10000 $0.227
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    SI3407DV-T1-GE3 Reel 17 Weeks 3,000
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    TME SI3407DV-T1-GE3 2,787 1
    • 1 $0.4
    • 10 $0.4
    • 100 $0.26
    • 1000 $0.221
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    Bristol Electronics SI3407DV-T1-GE3 1,927
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    Avnet Asia SI3407DV-T1-GE3 19 Weeks 3,000
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    Vishay Intertechnologies SI3407DV-T1-BE3

    MOSFETs TSOP P CHAN 20V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI3407DV-T1-BE3 99,741
    • 1 $0.56
    • 10 $0.377
    • 100 $0.257
    • 1000 $0.184
    • 10000 $0.139
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    TTI Europe SI3407DV-T1-BE3 3,000
    • 1 -
    • 10 -
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    • 10000 €0.129
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    Avnet Americas SI3407DV-T1-BE3 Reel 17 Weeks 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.1353
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    SI3407DV Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3407DV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 8A 6-TSOP Original PDF
    SI3407DV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 8A 6-TSOP Original PDF

    SI3407DV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si3407DV

    Abstract: No abstract text available
    Text: New Product Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V a - 8.0 • • • • Qg (Typ.) 21 nC TrenchFET Power MOSFET PWM Optimized


    Original
    PDF Si3407DV Si3407DV-T1-E3 08-Apr-05

    si3407

    Abstract: SI3407DV-T1-GE3 Si3407DV
    Text: Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V - 8.0a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3407DV 2002/95/EC Si3407DV-T1-E3 Si3407DV-T1-GE3 18-Jul-08 si3407

    Untitled

    Abstract: No abstract text available
    Text: Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V - 8.0a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3407DV 2002/95/EC Si3407DV-T1-E3 Si3407DV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V - 8.0a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3407DV 2002/95/EC Si3407DV-T1-E3 Si3407DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0240 at VGS = - 4.5 V - 8a 0.0372 at VGS = - 2.5 V - 8a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3407DV 2002/95/EC Si3407DV-T1-E3 Si3407DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si3407

    Abstract: Si3407DV
    Text: SPICE Device Model Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si3407DV 18-Jul-08 si3407

    transistor c 6093

    Abstract: c 6093 si3407 AN609 Si3407DV 68676
    Text: Si3407DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When


    Original
    PDF Si3407DV AN609, 22-Apr-08 transistor c 6093 c 6093 si3407 AN609 68676

    Untitled

    Abstract: No abstract text available
    Text: Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V - 8.0a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3407DV 2002/95/EC Si3407DV-T1-E3 Si3407DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si3407

    Abstract: Si3407DV
    Text: New Product Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V a - 8.0 • • • • Qg (Typ.) 21 nC TrenchFET Power MOSFET PWM Optimized


    Original
    PDF Si3407DV Si3407DV-T1-E3 18-Jul-08 si3407

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3407DV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si3407DV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    PMO13701

    Abstract: pacer oled pmo13701 SiT8002 W25X16VSS1G DP83848CVV/NOPB fairchild AG6 diode WINBOND W25X16 sitime osram t8 18 Osram HMI 270 electronic N
    Text: Fusion Embedded Development Kit User’s Guide 2009 Actel Corporation. All rights reserved. Printed in the United States of America Part Number: 50200156-1 Release: August 2009 No part of this document may be copied or reproduced in any form or by any means without prior written


    Original
    PDF

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original
    PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    AT45BD161D-SU

    Abstract: PMO13701 USB 2.0 SPI Flash Programmer schematic fpga JTAG Programmer Schematics tp182 HDR4P Actel igloo TP181 J25-J27 KSC403J
    Text: IGLOO PLUS Starter Kit User’s Guide Actel Corporation, Mountain View, CA 94043 2009 Actel Corporation. All rights reserved. Printed in the United States of America Part Number: 50200152-0 Release: March 2009 No part of this document may be copied or reproduced in any form or by any means without prior written


    Original
    PDF

    capacitor 47 nano

    Abstract: EBMS321611B190 rpack 10k EBMS3216 USBLC6-2SC6-SOT23-6L FlashPro3 EBMS321611B190-1206 EBMS LIR2450 flashpro3 schematic
    Text: IGLOO nano Starter Kit User’s Guide Actel Corporation, Mountain View, CA 94043 2009 Actel Corporation. All rights reserved. Printed in the United States of America Part Number: 50200146-0 Release: February 2009 No part of this document may be copied or reproduced in any form or by any means without prior written


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    PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477