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    SI2399DS Price and Stock

    Vishay Siliconix SI2399DS-T1-GE3

    MOSFET P-CH 20V 6A SOT23-3
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    DigiKey SI2399DS-T1-GE3 Cut Tape 5,706 1
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    SI2399DS-T1-GE3 Digi-Reel 5,706 1
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    SI2399DS-T1-GE3 Reel 3,000 3,000
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    Vishay Siliconix SI2399DS-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI2399DS-T1-BE3 Digi-Reel 1,260 1
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    SI2399DS-T1-BE3 Cut Tape 1,260 1
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    SI2399DS-T1-BE3 Reel 3,000
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    MOSLEADER SI2399DS-T1-GE3-ML

    P -20V 6A SOT-23
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    DigiKey SI2399DS-T1-GE3-ML Reel 200
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    Vishay Intertechnologies SI2399DS-T1-GE3

    Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 26AK9917)
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    Avnet Americas SI2399DS-T1-GE3 Ammo Pack 17 Weeks, 3 Days 1
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    SI2399DS-T1-GE3 Ammo Pack 19 Weeks, 1 Days 1
    • 1 $0.596
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    SI2399DS-T1-GE3 Reel 18 Weeks 3,000
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    Mouser Electronics SI2399DS-T1-GE3 67,565
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    Verical SI2399DS-T1-GE3 312,000 3,000
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    SI2399DS-T1-GE3 9,000 3,000
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    SI2399DS-T1-GE3 625 355
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    SI2399DS-T1-GE3 72 42
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    Arrow Electronics SI2399DS-T1-GE3 312,000 18 Weeks 3,000
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    SI2399DS-T1-GE3 9,000 18 Weeks 3,000
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    SI2399DS-T1-GE3 Cut Strips 72 18 Weeks 1
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    Newark SI2399DS-T1-GE3 Cut Tape 2,960 1
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    SI2399DS-T1-GE3 Cut Tape 625 1
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    SI2399DS-T1-GE3 Reel 1
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    Bristol Electronics SI2399DS-T1-GE3 57
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    TTI SI2399DS-T1-GE3 Reel 3,000 3,000
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    TME SI2399DS-T1-GE3 1
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    Chip 1 Exchange SI2399DS-T1-GE3 7,284
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    Avnet Asia SI2399DS-T1-GE3 20 Weeks 3,000
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    EBV Elektronik SI2399DS-T1-GE3 22 Weeks 3,000
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    Vishay Intertechnologies SI2399DS-T1-BE3

    Transistor MOSFET P-CH 20V 6A 3-Pin SOT-23 - Tape and Reel (Alt: SI2399DS-T1-BE3)
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    Avnet Americas SI2399DS-T1-BE3 Reel 18 Weeks 3,000
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    Mouser Electronics SI2399DS-T1-BE3 17,457
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    Newark SI2399DS-T1-BE3 Bulk 3,000
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    TTI SI2399DS-T1-BE3 Reel 9,000 3,000
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    SI2399DS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2399DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6A SOT-23 Original PDF

    SI2399DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si2399DS 2002/95/EC O-236 OT-23) Si2399DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2399DS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    PDF Si2399DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si2399

    Abstract: mar 835 mosfet SI2399DS
    Text: SPICE Device Model Si2399DS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si2399DS 18-Jul-08 Si2399 mar 835 mosfet

    mar 835 mosfet

    Abstract: sot-23 MARKING CODE 41B Si2399 Si2399DS
    Text: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si2399DS 2002/95/EC O-236 OT-23) Si2399DS-T1-GE3 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC mar 835 mosfet sot-23 MARKING CODE 41B Si2399

    Si2399

    Abstract: si23
    Text: Si2399DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF Si2399DS AN609, 5131u 3536m 0737m 0501u 6224m 5373m 1818m Si2399 si23

    Untitled

    Abstract: No abstract text available
    Text: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si2399DS 2002/95/EC O-236 OT-23) Si2399DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    sot-23 MARKING CODE 41B

    Abstract: mar 835 mosfet Si2399 SI2399DS
    Text: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si2399DS 2002/95/EC O-236 OT-23) Si2399DS-T1-GE3 25hay 11-Mar-11 sot-23 MARKING CODE 41B mar 835 mosfet Si2399

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836