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    SI2305 Price and Stock

    Vishay Siliconix SI2305CDS-T1-GE3

    MOSFET P-CH 8V 5.8A SOT23-3
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    DigiKey SI2305CDS-T1-GE3 Cut Tape 45,419 1
    • 1 $0.58
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    SI2305CDS-T1-GE3 Digi-Reel 45,419 1
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    SI2305CDS-T1-GE3 Reel 44,000 3,000
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    RS SI2305CDS-T1-GE3 Bulk 3,000
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    Quest Components SI2305CDS-T1-GE3 70
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    New Advantage Corporation SI2305CDS-T1-GE3 102,000 1
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    Micro Commercial Components SI2305B-TP

    MOSFET P-CH 20V 4.2A SOT23
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    DigiKey SI2305B-TP Digi-Reel 27,997 1
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    SI2305B-TP Cut Tape 27,997 1
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    SI2305B-TP Reel 24,000 3,000
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    Mouser Electronics SI2305B-TP 76,415
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    Verical SI2305B-TP 2,640,000 3,000
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    SI2305B-TP 2,625,000 3,000
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    SI2305B-TP 1,713,000 12,000
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    Arrow Electronics SI2305B-TP 2,640,000 6 Weeks 3,000
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    SI2305B-TP 2,625,000 16 Weeks 3,000
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    TME SI2305B-TP 6,689 3
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    Ameya Holding Limited SI2305B-TP 27,135
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    New Advantage Corporation SI2305B-TP 2,592,000 1
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    Win Source Electronics SI2305B-TP 15,414
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    Micro Commercial Components SI2305-TP

    MOSFET P-CH 8V 4.1A SOT23
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    DigiKey SI2305-TP Digi-Reel 9,217 1
    • 1 $0.43
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    SI2305-TP Cut Tape 9,217 1
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    SI2305-TP Reel 3,000 3,000
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    Mouser Electronics SI2305-TP 19,888
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    Verical SI2305-TP 240,000 12,000
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    Bristol Electronics SI2305-TP 495 23
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    Quest Components SI2305-TP 396
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    Vishay Siliconix SI2305CDS-T1-BE3

    P-CHANNEL 8-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2305CDS-T1-BE3 Digi-Reel 2,860 1
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    SI2305CDS-T1-BE3 Cut Tape 2,860 1
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    Micro Commercial Components SI2305BHE3-TP

    P-CHANNEL MOSFET,SOT-23
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    DigiKey SI2305BHE3-TP Digi-Reel 2,725 1
    • 1 $0.45
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    SI2305BHE3-TP Cut Tape 2,725 1
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    • 1000 $0.11742
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    Mouser Electronics SI2305BHE3-TP
    • 1 $0.44
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    Verical SI2305BHE3-TP 594,000 12,000
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    SI2305 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2305ADS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 5.4A SOT23-3 Original PDF
    SI2305ADS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 5.4A SOT23-3 Original PDF
    SI2305B-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL,MOSFETS,SOT-23 PACKAGE Original PDF
    SI2305CDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 5.8A SOT23-3 Original PDF
    Si2305DS Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI2305DS Vishay Telefunken P-Channel 1.25-W, 1.8-V (G-S) MOSFET Original PDF
    Si2305DS-E3 Vishay Transistor Mosfet P-CH 8V 3.5A 3TO-236 Original PDF
    Si2305DS SPICE Device Model Vishay P-Channel 1.25-W, 1.8-V (G-S) MOSFET Original PDF
    Si2305DS-T1 Vishay Transistor Mosfet P-CH 8V 3.5A 3TO-236 T/R Original PDF
    Si2305DS-T1-E3 Vishay Transistor Mosfet P-CH 8V 3.5A 3TO-236 T/R Original PDF
    SI2305DS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 3.5A SOT23-3 Original PDF
    SI2305DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 3.5A SOT23-3 Original PDF
    SI2305DS-TI-E3 Vishay Transistor Mosfet P-CH 8V 3.5A 3TO-236 T/R Original PDF
    SI2305-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL MOSFET, SOT-23 PACKAGE Original PDF

    SI2305 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2305DS-T1-E3

    Abstract: SI2305DS-T1 / A5 Si2305DS Si2305DS-T1
    Text: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 • TrenchFET Power MOSFETs: 1.8 V Rated rDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 0.071 at VGS = - 2.5 V ±3 RoHS* 0.108 at VGS = - 1.8 V ±2 COMPLIANT


    Original
    PDF Si2305DS O-236 OT-23) Si2305DS-T1 Si2305DS-T1-E3 08-Apr-05 SI2305DS-T1 / A5

    Si2305ADS

    Abstract: Si2305ADS-T1-E3 SI2305ADS-T1-GE3
    Text: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 -8 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si2305ADS O-236 OT-23) Si2305ADS-T1-E3 Si2305ADS-T1-GE3 11-Mar-11

    Si2305ADS

    Abstract: S-81021
    Text: SPICE Device Model Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2305ADS 18-Jul-08 S-81021

    Untitled

    Abstract: No abstract text available
    Text: Si2305CDS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.035 at VGS = - 4.5 V - 5.8 -8 0.048 at VGS = - 2.5 V - 5.0 0.065 at VGS = - 1.8 V - 4.3 Qg (Typ.) 12 nC APPLICATIONS TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si2305CDS O-236 OT-23) 2002/95/EC Si2305CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Si2305DS-T1-E3

    Abstract: Si2305DS Si2305DS-T1
    Text: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 -8 0.071 at VGS = - 2.5 V ±3 0.108 at VGS = - 1.8 V ±2 • Halogen-free According to IEC 61249-2-21 Available


    Original
    PDF Si2305DS O-236 OT-23) Si2305DS-T1 Si2305DS-T1-E3 Si2305DS-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 -8 0.071 at VGS = - 2.5 V ±3 0.108 at VGS = - 1.8 V ±2 • Halogen-free According to IEC 61249-2-21 Available


    Original
    PDF Si2305DS O-236 OT-23) Si2305DS-T1 Si2305DS-T1-E3 Si2305DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    SI2305ADS-T1

    Abstract: No abstract text available
    Text: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 -8 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si2305ADS O-236 OT-23) Si2305ADS-T1-E3 Si2305ADS-T1-GE3 70trademarks 2011/65/EU 2002/95/EC. 2002/95/EC SI2305ADS-T1

    82713

    Abstract: Si2305ADS
    Text: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available Qg (Typ.) • TrenchFET Power MOSFET


    Original
    PDF Si2305ADS O-236 OT-23) Si2305ADS-T1-E3 Si2305ADS-T1-GE3 18-Jul-08 82713

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2305CDS www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original
    PDF Si2305CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 -8 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si2305ADS O-236 OT-23) Si2305ADS-T1-E3 Si2305ADS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SI2305CDS

    Abstract: SI2305 44A16
    Text: SPICE Device Model Si2305CDS Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original
    PDF Si2305CDS 18-Jul-08 SI2305 44A16

    Si2305DS

    Abstract: No abstract text available
    Text: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V "3.5 0.071 @ VGS = –2.5 V "3 0.108 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2305DS (A5)* *Marking Code


    Original
    PDF Si2305DS O-236 OT-23) S-56947--Rev. 28-Dec-98

    A5 sot-23 single DIODE

    Abstract: No abstract text available
    Text: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 -8 0.071 at VGS = - 2.5 V ±3 0.108 at VGS = - 1.8 V ±2 • Halogen-free According to IEC 61249-2-21 Available


    Original
    PDF Si2305DS O-236 OT-23) Si2305DS-T1 Si2305DS-T1-E3 Si2305DS-T1-GE3 11-Mar-11 A5 sot-23 single DIODE

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 -8 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si2305ADS O-236 OT-23) Si2305ADS-T1-E3 Si2305ADS-T1-GE3 70hay 11-Mar-11

    Si2305DS

    Abstract: Si2305DS SPICE Device Model
    Text: SPICE Device Model Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2305DS 07-May-01 Si2305DS SPICE Device Model

    SI2305CDS

    Abstract: Si2305CDS-T1-GE3 marking sot-23 N5 p-channel
    Text: New Product Si2305CDS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.035 at VGS = - 4.5 V - 5.8 -8 0.048 at VGS = - 2.5 V - 5.0 0.065 at VGS = - 1.8 V - 4.3 Qg (Typ.) 12 nC APPLICATIONS TO-236 (SOT-23) G


    Original
    PDF Si2305CDS O-236 OT-23) 2002/95/EC Si2305CDS-T1-GE3 18-Jul-08 marking sot-23 N5 p-channel

    Si2305ADS

    Abstract: marking code vishay SILICONIX sot-23
    Text: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 Qg (Typ.) 7.8 nC • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si2305ADS O-236 OT-23) Si2305ADS-T1-E3 08-Apr-05 marking code vishay SILICONIX sot-23

    SI2305CDS

    Abstract: n5 marking Si2305CDS-T1-GE3 N5 marking code
    Text: Si2305CDS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.035 at VGS = - 4.5 V - 5.8 -8 0.048 at VGS = - 2.5 V - 5.0 0.065 at VGS = - 1.8 V - 4.3 Qg (Typ.) 12 nC APPLICATIONS TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si2305CDS O-236 OT-23) 2002/95/EC Si2305CDS-T1-GE3 18-Jul-08 n5 marking N5 marking code

    Si2305DS

    Abstract: No abstract text available
    Text: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V "3.5 0.071 @ VGS = –2.5 V "3 0.108 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2305DS (A5)* *Marking Code


    Original
    PDF Si2305DS O-236 OT-23) 08-Apr-05

    a5 marking

    Abstract: No abstract text available
    Text: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 • TrenchFET Power MOSFETs: 1.8 V Rated rDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 0.071 at VGS = - 2.5 V ±3 RoHS* 0.108 at VGS = - 1.8 V ±2 COMPLIANT


    Original
    PDF Si2305DS O-236 OT-23) Si2305DS-T1 Si2305DS-T1-E3 18-Jul-08 a5 marking

    si2305ads

    Abstract: No abstract text available
    Text: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 Qg (Typ.) 7.8 nC • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si2305ADS O-236 OT-23) Si2305ADS-T1-E3 18-Jul-08

    Si2305CDS-T1-GE3

    Abstract: S10 SOT23 MARKING marking sot-23 N5 p-channel
    Text: Si2305CDS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.035 at VGS = - 4.5 V - 5.8 -8 0.048 at VGS = - 2.5 V - 5.0 0.065 at VGS = - 1.8 V - 4.3 Qg (Typ.) 12 nC APPLICATIONS TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si2305CDS 2002/95/EC O-236 OT-23) Si2305CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. S10 SOT23 MARKING marking sot-23 N5 p-channel

    Untitled

    Abstract: No abstract text available
    Text: Si2305CDS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)d VDS (V) RDS(on) (Ω) 0.035 at VGS = - 4.5 V - 5.8 -8 0.048 at VGS = - 2.5 V - 5.0 0.065 at VGS = - 1.8 V - 4.3 Qg (Typ.) 12 nC APPLICATIONS TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si2305CDS O-236 OT-23) 2002/95/EC Si2305CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si2305DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2305DS 18-Jul-08