Shantou Huashan Electronic Devices
Abstract: HCP6C60
Text: Shantou Huashan Electronic Devices Co.,Ltd. HCP6C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =6A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type █ General Description
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HCP6C60
Shantou Huashan Electronic Devices
HCP6C60
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HFP840
Abstract: diode 400V 4A IRF840 irf840 equivalent 8A500V transistor 400v 8a to220
Text: HFP840 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters,
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HFP840
O-220
IRF840
width300S
HFP840
diode 400V 4A
IRF840
irf840 equivalent
8A500V
transistor 400v 8a to220
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HFP730
Abstract: HFP730 equivalent IRF730 transistor IRF730
Text: HFP730 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters,
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HFP730
O-220
IRF730
width300S
HFP730
HFP730 equivalent
IRF730
transistor IRF730
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hfp640
Abstract: IRF640 equivalent irf640
Text: HFP640 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters,
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HFP640
O-220
IRF640
width300S
hfp640
IRF640 equivalent
irf640
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HBS170
Abstract: No abstract text available
Text: Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. They
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HBS170
500mA
100uA
200mA
HBS170
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"Silicon Controlled Rectifier"
Abstract: HCP8C60 gate voltage control circuit dc voltage
Text: Shantou Huashan Electronic Devices Co.,Ltd. HCP8C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =8A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type █ General Description
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HCP8C60
"Silicon Controlled Rectifier"
HCP8C60
gate voltage control circuit dc voltage
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SCR 40A 600V
Abstract: HCP20C60 cicuit SCR 20A 600V
Text: Shantou Huashan Electronic Devices Co.,Ltd. HCP20C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =20A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type █ General Description
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HCP20C60
SCR 40A 600V
HCP20C60
cicuit
SCR 20A 600V
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HCP16C60
Abstract: No abstract text available
Text: Shantou Huashan Electronic Devices Co.,Ltd. HCP16C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =16A) * Low On-State Voltage (1.35V(Typ.)@ ITM) * Non-isolated Type █ General Description
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HCP16C60
HCP16C60
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HFP830
Abstract: IRF830 DIODE HALF BRIDGE TO-220
Text: HFP830 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to
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HFP830
O-220
IRF830
HFP830
IRF830
DIODE HALF BRIDGE TO-220
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transistor equivalent irf740
Abstract: full bridge irf740 HFP740 irf740 equivalent IRF740 mosfet irf740
Text: HFP740 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize
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HFP740
O-220
IRF740
width300S
10Apk
transistor equivalent irf740
full bridge irf740
HFP740
irf740 equivalent
IRF740
mosfet irf740
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HJP1645CT
Abstract: No abstract text available
Text: HJP1645CT Shantou Huashan Electronic Devices Co.,Ltd. 16A SCHOTTKY BARREIER RECTIFIER █ Features █ Package Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability
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HJP1645CT
O-220
die60HZ.
25unless
HJP1645CT
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HJP10100CT
Abstract: No abstract text available
Text: HJP10100CT Shantou Huashan Electronic Devices Co.,Ltd. 10A HIGH VOLTAGE SCHOTTKY BARREIER RECTIFIER █ Features █ Package Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability
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HJP10100CT
O-220
HJP10100CT
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HCP12C60
Abstract: gate voltage control dc
Text: Shantou Huashan Electronic Devices Co.,Ltd. HCP12C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =12A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type █ General Description
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HCP12C60
HCP12C60
gate voltage control dc
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HCN6C60
Abstract: No abstract text available
Text: Shantou Huashan Electronic Devices Co.,Ltd. HCN6C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =6A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type █ General Description
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HCN6C60
HCN6C60
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FQP30N06
Abstract: fqp30n06 equivalent hfp30n06
Text: HFP30N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize
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HFP30N06
O-220
FQP30N06
Tempe0N06
FQP30N06
fqp30n06 equivalent
hfp30n06
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relay 6v 100 ohm
Abstract: electronic relay 6v phase control trigger ht138f IT15A
Text: HT138F-600 Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC TO-220F PACKAGE █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=12A) * High Commutation dv/dt *Isolation Voltage（VISO=1500V AC） TO-220F
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HT138F-600
O-220F
O-220F
HBT138F-600
relay 6v 100 ohm
electronic relay 6v
phase control trigger
ht138f
IT15A
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H2N7000
Abstract: No abstract text available
Text: H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. These products
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H2N7000
500mA
200mA
H2N7000
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HJP20100CT
Abstract: No abstract text available
Text: HJP20100CT Shantou Huashan Electronic Devices Co.,Ltd. 20A HIGH VOLTAGE SCHOTTKY BARREIER RECTIFIER █ Features █ Package Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability
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HJP20100CT
O-220
HJP20100CT
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c25 rectifier
Abstract: 10A high efficiency rectifier
Text: Shantou Huashan Electronic Devices Co.,Ltd. HKP1040CT 10A SCHOTTKY BARREIER RECTIFIER █ Features █ Package n Metal of silicon rectifier,majority carrier conducton n Guard ring for transient protection n Low power loss, high efficiency n High current capability, low VF
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HKP1040CT
O-220
300us
c25 rectifier
10A high efficiency rectifier
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electronic relay 6v
Abstract: No abstract text available
Text: HTF16A60 Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC TO-220F PACKAGE █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=16A) * High Commutation dv/dt *Isolation Voltage（VISO=1500V AC） TO-220F
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HTF16A60
O-220F
O-220F
electronic relay 6v
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scr 600V 10A
Abstract: No abstract text available
Text: Shantou Huashan Electronic Devices Co.,Ltd. HCF10C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =10A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type █ General Description
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HCF10C60
scr 600V 10A
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6V relay
Abstract: electronic relay 6v Triac 3a 600v HTF6A60
Text: HTF6A60 Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC TO-220F PACKAGE █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=6A) * High Commutation dv/dt *Isolation Voltage（VISO=1500V AC） TO-220F █ General Description
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HTF6A60
O-220F
O-220F
6V relay
electronic relay 6v
Triac 3a 600v
HTF6A60
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diode 28v, amps
Abstract: HKP3040CT c125 diode
Text: Shantou Huashan Electronic Devices Co.,Ltd. HKP3040CT 30A SCHOTTKY BARREIER RECTIFIER █ Features █ Package n 30 Amps Total 15 Amps Per Diode Leg n Guard Ring Die Construction for Transient Protection n Low Power Loss,High Efficiency n High Surge Capability
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HKP3040CT
O-220
diode 28v, amps
HKP3040CT
c125 diode
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electronic relay 6v
Abstract: triac 600V 80A triac 1500v relay 6v 150 ohm 6v 150 ohm relay Triac 3a 600v triac 600v 3a
Text: HBT137F-600 Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC TO-220F PACKAGE █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=8A) * High Commutation dv/dt *Isolation Voltage（VISO=1500V AC） TO-220F
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HBT137F-600
O-220F
O-220F
electronic relay 6v
triac 600V 80A
triac 1500v
relay 6v 150 ohm
6v 150 ohm relay
Triac 3a 600v
triac 600v 3a
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