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    HFP730

    Abstract: HFP730 equivalent IRF730 transistor IRF730
    Text: HFP730 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters,


    Original     		PDF HFP730 O-220 IRF730 width300S HFP730 HFP730 equivalent IRF730 transistor IRF730

    HFP730

    Abstract: No abstract text available
    Text: BVDSS = 400 V RDS on typ = 0.8 Ω HFP730 ID = 5.5 A 400V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


    Original     		PDF HFP730 O-220 54typ HFP730