IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
IRF722P
IRF732P
SGSP3055
IRF730P
1rfp450
IRF510
SGSP312
IRF540FI
irf522p
MTP20N10
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
TP8N10
th15n20
TH7N50
TP4N10
TP10N05
IRFP350FI
TP5N35
tp5n40
TP4N45
TP3N40
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sgsp473
Abstract: RS2040 sgsp573 SGSP477
Text: S G S-THOMSON G?E J> g 7^5^53? dOl?^ ^ g : 73C 17426 D /•3^13 \{\l% S6SP473/P573 1 n Pi N-OHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIOIMS These products are diffused m ulti-cell silicon gate N-Channel enhancement mode Power-Mos field e ffect transistors.
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S6SP473/P573
SGSP477/P577
OT-93
SGSP473
SGSP573
SGSP477
SGSP577
C-155
0Q17c
SGSP473/P573
RS2040
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SEF242
Abstract: sef240 sgsp573 C-150V SEF241
Text: S G S-THOMSON D7E 73 C 17482 7 ^ 5 3 7 7 ^ 3 * N-CHANNEL POWER MOS TRANSISTORS H IG H SPEED. S W IT C H IN G A P P L IC A T IO N S These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors. A B S O L U T E M A X IM U M R A T IN G S
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SEF24U
SEF241
SEF242
SEF243
SGSP573
C-207
SEF240
C-150V
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