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    Untitled

    Abstract: No abstract text available
    Text: SGSP141 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)0.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)


    Original     		PDF SGSP141

    GG 06

    Abstract: VN35010
    Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) 5 10 UFN733 2N6759 SFN333 MTM5N35


    Original     		PDF UFN733 2N6759 SFN333 MTM5N35 MTP5N35 VN35010 GG 06

    p341

    Abstract: P241 sgsp240 SGSP241 SP140 SGSP141 sgsp341 p141 05 SGSP SGSP140
    Text: 7^5^237 GQl7fln i S G S-THOMSON 07E 73C 1 7 3 1 6 7 '- 3 ^ - 0 7 HIGH SPEED SW IT C H IN G APPLICATIONS ' dm • (DLM (.) f\ot Tstg TJ R DS(ON) 3 5 0 V /4 0 0 V 20Q 0 .6 A 450V 25Q 0 .6 A TO-39 SOT-82 TO -220 Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KQ)


    OCR Scan     		PDF SGSP14 /PI41/P142 SGSPZ40/P241/P242 SGSP340/P341/P342 SGSP142 SGSP242 SGSP342 OT-82 SGSP140 SGSP240 p341 P241 SGSP241 SP140 SGSP141 sgsp341 p141 05 SGSP