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    SGR20N40L Price and Stock

    onsemi SGR20N40LTF

    IGBT 400V 45W DPAK
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    DigiKey SGR20N40LTF Reel 2,000
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    Others SGR20N40L

    400 V, N-CHANNEL IGBT, TO-252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SGR20N40L 288
    • 1 $2.3
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    Fairchild Semiconductor Corporation SGR20N40LTM

    Insulated Gate Bipolar Transistor, 400V, N-Channel, TO-252 '
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    Rochester Electronics SGR20N40LTM 30 1
    • 1 $1.3
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    • 100 $1.22
    • 1000 $1.11
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    Fairchild Semiconductor Corporation SGR20N40LTF

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    Bristol Electronics SGR20N40LTF 10
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    SGR20N40L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGR20N40L Fairchild Semiconductor Discrete, IGBT Original PDF
    SGR20N40L Fairchild Semiconductor N-CHANNEL IGBT Scan PDF
    SGR20N40LTF Fairchild Semiconductor Discrete, IGBT Original PDF
    SGR20N40LTM Fairchild Semiconductor Discrete, IGBT Original PDF

    SGR20N40L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGBT cross-reference

    Abstract: AN9006 IGBT application note IGBT Pspice SGR20N40LTF
    Text: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These


    Original     		PDF SGR20N40L SGU20N40L SGU20N40L SGU20N40LTU O-251 IGBT cross-reference AN9006 IGBT application note IGBT Pspice SGR20N40LTF

    SGR20N40L

    Abstract: SGU20N40L transistor* igbt 70A 300 V
    Text: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These


    Original     		PDF SGR20N40L SGU20N40L SGR20N40L SGU20N40L transistor* igbt 70A 300 V

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SGR20N40L / SGU20N40L FEATURES N-CHANNEL IGBT D-PAK I-PAK * High Input Impedance * High Peak Current Capability 150A * Easy Gate Drive APPLICATIONS C *Strobe Flash G E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics VCES Rating Units Collector-Emitter Voltage


    Original     		PDF SGR20N40L SGU20N40L

    66VCE

    Abstract: SGR20N40L SGU20N40L
    Text: Preliminary N-CHANNEL IGBT SGR20N40L / SGU20N40L FEATURES D-PAK I-PAK * High Input Impedance * High Peak Current Capability 150A * Easy Gate Drive APPLICATIONS C *Strobe Flash G E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics VCES Rating Units Collector-Emitter Voltage


    Original     		PDF SGR20N40L SGU20N40L 66VCE SGU20N40L

    Untitled

    Abstract: No abstract text available
    Text: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for strobe


    Original     		PDF SGR20N40L SGU20N40L

    AN9006

    Abstract: No abstract text available
    Text: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These


    Original     		PDF SGR20N40L SGU20N40L O-252 SGR20N40LTF SGR20N40LTM AN9006

    INDUCTION HEATING

    Abstract: induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D
    Text: Discrete Discrete IGBTs BVCES Min V IC@100°C (A) VCE(sat) Typ (V) tf Typ (ns) Short Circuit Rated Built-in Diode 400 130 4.5 1500 No No Camera Strobe HGT1N30N60A4D 600 60 1.8 38 No Yes Power Conversion (SMPS Series) HGT1N40N60A4D 600 63 1.7 35 No Yes Power Conversion (SMPS Series)


    Original     		PDF HGT1N30N60A4D HGT1N40N60A4D HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 SGF23N60UFD SGF15N60RUFD SGF40N60UF INDUCTION HEATING induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRFR9020tm

    Abstract: IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM
    Text: Date Created: 3/9/2004 Date Issued: 3/24/2004 PCN # 20041003 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 78M06CDTXM MC78M12CDTX MC78M15CDTXM MJD122TF MJD210TF MJD29TF MJD30TF MJD31TF MJD32CTM MJD350TF IRFR9020tm IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM

    RURU8060

    Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
    Text: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers


    Original     		PDF FGS15N40L OT-227 HGT1N30N60A4D HGT1N40N60A4D O-220 HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 RURU8060 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor

    ka7745

    Abstract: EI-1614 xenon light source circuit diagram igbt xenon tube IC-276 3V to 300V dc dc converter xenon lamp design SGR20N40L SCR TRIGGER PULSE TRANSFORMER xenon strobe lamp
    Text: AN9006 IGBT Application Note For Camera Strobe Camera Strobe System Summary The Camera Strobe System Portable & DSC is a lighting system for taking pictures in relatively dark areas, without the accompanying negative effect on picture quality. The strobe system is


    Original     		PDF AN9006 ka7745 EI-1614 xenon light source circuit diagram igbt xenon tube IC-276 3V to 300V dc dc converter xenon lamp design SGR20N40L SCR TRIGGER PULSE TRANSFORMER xenon strobe lamp

    IGBT Pspice

    Abstract: TO252-DPAK D2PAK TO-252DPAK HGTG10N120BND HGTG11N120cn TO247-3 HGT1S5N120BN
    Text: Discrete Temperature range Software version Revision date HGT1S1N120CNDS TO-263 D2PAK -3 Thermal N/A N/A N/A HGT1S2N120BNS TO-263(D2PAK)-3 Thermal N/A N/A N/A HGT1S2N120CN TO-262(I2PAK)-3 Thermal N/A N/A N/A HGT1S2N120CNDS TO-263(D2PAK)-3 Thermal N/A N/A N/A


    Original     		PDF HGT1S1N120CNDS HGT1S2N120BNS HGT1S2N120CN HGT1S2N120CNDS HGT1S5N120BNDS HGT1S5N120BNS HGT1S5N120CNDS HGT1S5N120CNS HGTD1N120BNS HGTD1N120CNS IGBT Pspice TO252-DPAK D2PAK TO-252DPAK HGTG10N120BND HGTG11N120cn TO247-3 HGT1S5N120BN

    ka7745

    Abstract: 3V to 300V dc dc converter xenon light source circuit diagram EI-1614 igbt xenon tube control light intensity using SCR AN9006 EI 33 transformer SCR TRIGGER PULSE TRANSFORMER SGR20N40L
    Text: July, 2000 AN9006 IGBT Application Note For Camera Strobe Camera Strobe System Summary The Camera Strobe System Portable & DSC is a lighting system for taking pictures in relatively dark areas, without the accompanying negative effect on picture quality. The strobe system is


    Original     		PDF AN9006 ka7745 3V to 300V dc dc converter xenon light source circuit diagram EI-1614 igbt xenon tube control light intensity using SCR AN9006 EI 33 transformer SCR TRIGGER PULSE TRANSFORMER SGR20N40L

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SGR20N40L / SGU20N40L N-CHANNEL IGBT FEATURES * High Input Impedance * High Peak Current Capability 150A * Easy Gate Drive APPLICATIONS *Strobe Flash ABSOLUTE MAXIMUM RATINGS Rating Units Collector-Emitter Voltage 450 V V ges Gate-Emitter Voltage


    OCR Scan     		PDF SGR20N40L SGU20N40L

    RG30H

    Abstract: No abstract text available
    Text: Preliminary SGR20N40L / SGU20N40L N-CHANNEL IGBT FEATURES * High Input Impedance * High Peak Current Capability 150A * Easy Gate Drive APPLICATIONS *Strobe Flash ABSOLUTE MAXIMUM RATINGS Symbol Characteristics V Collector-Emitter Voltage qes Rating Units


    OCR Scan     		PDF SGR20N40L SGU20N40L RG30H

    SGR20N40L

    Abstract: SGU20N40L
    Text: Prelim inary N-CHANNEL IG B T SGR20N40L / SGU20N40L D-PAK FE A TU R ES * High Input Impedance * High Peak Current Capability 150A * Easy Gate Drive 4 * A P P LIC A TIO N S *Strobe Flash A B S O LU TE M AXIM U M RA TIN G S Rating Units C ollector-Em itter Voltage


    OCR Scan     		PDF SGR20N40L SGU20N40L SGU20N40L

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SGR20N40L / SGU20N40L N-CHANNEL IGBT FEATURES * High Input Impedance * High Peak Current Capability 150A * Easy Gate Drive APPLICATIONS *Strobe Flash ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Rating Units VcES Collector-Emitter Voltage


    OCR Scan     		PDF SGR20N40L SGU20N40L SGU20N

    SGL40N150

    Abstract: SGH80N60UFD SGH40N60UFD IGBT Guide SGL60N90D F 10 L 600
    Text: IGBT Selection Guide SAMSUNG IGBT • High Performance Low Vce(sat ,High Speed) - Power Conversion Application PKG DEVICE Bvces [V] Ic [A] Vce(s)[V] (Min.) (Tc=100°C) (Typ.) Tf [ns] (Typ.) D-PAK SGR6N60UF 600 3 2.1 80 D2- PAK SGW6N60UF 600 3 2.1 80 SGW13N60UF


    OCR Scan     		PDF SGR6N60UF SGW6N60UF SGW13N60UF SGW23N60UF O-220 SGP6N60UF SGP13N60UF SGP23N60UF SGP40N60UF SGH40N60UF SGL40N150 SGH80N60UFD SGH40N60UFD IGBT Guide SGL60N90D F 10 L 600

    10A600V

    Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
    Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU


    OCR Scan     		PDF HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V