M15451E
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can
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PD29F064115-X
64M-BIT
16-BIT
PD29F064115-X
M15451E
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BGA-101P-M01
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM
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DS05-50208-2E
MB84LD23381EJ-10
101-ball
BGA-101P-M01
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A039h
Abstract: 3A400
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.
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16/4M
MBM29XL12DF
128M-bit,
90-pin
96-ball
A039h
3A400
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4kw marking
Abstract: No abstract text available
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0307
4kw marking
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FPT-48P-M19
Abstract: MBM29PL65LM-90 Diode SA91
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20903-1E FLASH MEMORY CMOS 64 M 4M x 16 BIT MirrorFlashTM MBM29PL65LM-90/10 • DESCRIPTION MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase.
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DS05-20903-1E
MBM29PL65LM-90/10
MBM29PL65LM
48-pin
MBM29PL65for
F0312
FPT-48P-M19
MBM29PL65LM-90
Diode SA91
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32 KB SRAM
Abstract: DS05-50208-1E SWITCH SA125
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM • Power supply voltage of 2.3 to 2.7 V for Flash
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DS05-50208-1E
MB84LD23381EJ-10
101-ball
MB84VD23381EJ-90
32 KB SRAM
DS05-50208-1E
SWITCH SA125
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4kw marking
Abstract: MBM29DL640E
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA-90/MB84VD23280EE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance
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DS05-50211-2E
MB84VD23280EA-90/MB84VD23280EE-90
101-ball
4kw marking
MBM29DL640E
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32 KB SRAM
Abstract: MBM29DL640E
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash
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DS05-50209-2E
MB84VD23381EJ-90
32 KB SRAM
MBM29DL640E
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DS05-20905-1E
Abstract: BGA-48P-M13 FPT-48P-M19 MBM29DL64DF MBM29DL64DF-70
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20905-1E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL64DF-70 • DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be
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DS05-20905-1E
MBM29DL64DF-70
MBM29DL64DF
48-pin
48-ball
F0303
DS05-20905-1E
BGA-48P-M13
FPT-48P-M19
MBM29DL64DF-70
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed
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MBM29QM96DF-65/80
MBM29QM96DF
96M-bit,
80-ball
F0212
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-1E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE/651UE -90/12 • GENERAL DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and
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DS05-20882-1E
MBM29LV650UE/651UE
64M-bit,
D-63303
F9912
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50210-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84LD23280EA-10/MB84LD23280EE-10 • FEATURES • Power supply voltage of 2.3 V to 2.7 V
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DS05-50210-1E
MB84LD23280EA-10/MB84LD23280EE-10
101-ball
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50214-1E 3Stacked MCP Multi-Chip Package FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 16M (×16) Mobile FCRAM & 4M (×16) STATIC RAM MB84VR5E3J1A1-85 • FEATURES • Power Supply Voltage of 2.7 to 3.1V • High Performance
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DS05-50214-1E
MB84VR5E3J1A1-85
85-ball
F0110
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SGA13
Abstract: No abstract text available
Text: MB84VD23481FJ-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MB84VD23481FJ-70
F0307
SGA13
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50221-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84VD23280FA-70 • FEATURES • • • • • Power Supply Voltage of 2.7 V to 3.1 V
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DS05-50221-1E
MB84VD23280FA-70
65-ball
F0204
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MB29LV
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-3E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE/651UE 90/12 • DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and
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DS05-20882-3E
MBM29LV650UE/651UE
64M-bit,
F0206
MB29LV
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marking code M19
Abstract: SA1-141 DS05 FPT-48P-M19 FPT-48P-M20 MBM29LV650UE MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90 SA127
Text: スパンションフラッシュメモリ データシート 2003 年 9 月 本ドキュメントは , 現在アドバンスト・マイクロ・デバイス社と富士通株式会社とが提供しているスパンショ ンブランドのフラッシュメモリ製品の仕様を規定しています。ドキュメントには元来の仕様開発元が記載され
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MBM29LV650UE90
MBM29LV651UE90
MBM29LV650UE/651UE
16bit
MBM29LV650UE90/651UE90
MBM29LV650UE90/MBM29LV651UE90
F48030S-c-6-7
marking code M19
SA1-141
DS05
FPT-48P-M19
FPT-48P-M20
MBM29LV650UE
MBM29LV650UE90
MBM29LV651UE
MBM29LV651UE90
SA127
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SGA23
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.
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16/4M
MBM29XL12DF
128M-bit,
90-pin
96-ball
SGA23
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HPPB
Abstract: DS05 FPT-56P-M01 MBM29QM12DH MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97
Text: MBM29QM12DH -60 データシート 生産終息品 MBM29QM12DH -60 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及 び履歴目的でのみご利用願います。
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MBM29QM12DH
MBM29QM12DH
DS05-20909-2
DS05-20909-2
HPPB
DS05
FPT-56P-M01
MBM29QM12DH60
MBM29QM12DH-60
SGA71
Diode SA97
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sga31
Abstract: SA124 MBM29LV650UE-90 tRH10 DS05 MBM29LV650UE MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90 Marking code M19
Text: MBM29LV650UE90/MBM29LV651UE90 データシート 生産終息品 MBM29LV650UE90/MBM29LV651UE90 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及
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MBM29LV650UE90/MBM29LV651UE90
MBM29LV650UE90/MBM29LV651UE90
DS05-20882-6
DS05-20882-6none
MBM29LV650UE90
MBM29LV651UE90
MBM29LV650UE/651UE
sga31
SA124
MBM29LV650UE-90
tRH10
DS05
MBM29LV650UE
MBM29LV650UE90
MBM29LV651UE
MBM29LV651UE90
Marking code M19
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MC-22212361F9-D80X-CD5
Abstract: MC-22212361F9-E85X-CD5 NEC MCP SRAM FLASH a810c
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-22212361-X MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 64M-BIT PAGE MODE FLASH MEMORY AND 4M-BIT SRAM Description The MC-22212361-X is a stacked type MCP (Multi-Chip Package) of 67,108,864 bits (4,194,304 words by 16 bits)
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MC-22212361-X
64M-BIT
MC-22212361-X
85-pin
-D80X
-E85X
MC-22212361F9-D80X-CD5
MC-22212361F9-E85X-CD5
NEC MCP SRAM FLASH
a810c
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60FFFF
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0309
60FFFF
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Untitled
Abstract: No abstract text available
Text: MBM29LV652UE90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MBM29LV652UE90
F0305
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56-Lead TSOP
Abstract: No abstract text available
Text: SPANSION TM Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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