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SEMIX151GAR12E4S Price and Stock

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SEMIKRON SEMIX151GAR12E4S Igbt Module, Npn, 1.2Kv, 232A; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX151GAR12E4S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX151GAR12E4S	Bulk			8	1 - 10 $63.98 100 $58.61 1000 $58.61 10000 $58.61	Buy Now
SEMIKRON SEMIX151GAR12E4S 27890104 Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 150A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX151GAR12E4S 27890104				1	1 $191.68 10 $141.12 100 $131.65 1000 $131.65 10000 $131.65	Get Quote

SEMIX151GAR12E4S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	SEMiX151GAR12E4s SEMiX151GAR12E4s	PDF
Untitled Abstract: No abstract text available Text: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX151GAR12E4s E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C	Original	SEMiX151GAR12E4s E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	SEMiX151GAR12E4s E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX151GAR12E4s E63532 App151GAR12E4s	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF