2N3810 LCC
Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
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FM36235
M/0103/CECC/UK
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
2N3810 LCC
2N2222A LCC1
ESCC 5202-001
MCA3201/2B
ESCC 5204/002
bul54ah
mp2835
ESCC 5201-002
silicon carbide JFET
2n918 die
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7703402YX
Abstract: 7703402UX 7703405UX 7703402TX 5962-8778201TX 7703401XX 5962-8778201XA 7703401UX 7703401yx 7703402XX
Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS QML LISTED VOLTAGE REGULATORS FULLY QUALIFIED PRODUCT EQUIVALENT TO DISCONTINUED LT AND OTHER TYPES TO3 TO257 Semelab DSCC-SMD Semelab DSCC-SMD IP117AHVK IP117AK IP117HVK IP117K
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IP117AHVK
IP117AK
IP117HVK
IP117K
IP120K-5
IP120K-12
IP120K-15
IP123AK-5
IP137AHVK
IP137AK
7703402YX
7703402UX
7703405UX
7703402TX
5962-8778201TX
7703401XX
5962-8778201XA
7703401UX
7703401yx
7703402XX
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smd diodes s4 1.5w
Abstract: PD9002 QR204 A4A smd SMD a3a GENERAL SEMICONDUCTOR SMD DIODES s4 smd code marking a3a QR208 QR217 smd code marking a4a
Text: Semelab Limited High Reliability and Screening Options DOC 2624 ISS 8 Contents 1. Introduction. 1 2. Quality Approvals . 2
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QR209
BS9300
QR216
QR204
MIL-PRF-19500
smd diodes s4 1.5w
PD9002
QR204
A4A smd
SMD a3a
GENERAL SEMICONDUCTOR SMD DIODES s4
smd code marking a3a
QR208
QR217
smd code marking a4a
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BROWN BOVERI guanella
Abstract: transistor c 5287 800w rf power amplifier circuit diagram transmission line transformers Design of H.F. Wideband Power Transformers Practical Wideband RF Power Transformers 300w rf amplifier uhf guanella transformers 325 339 H C 5287 equivalent
Text: RF APPLICATION NOTE: PUSH-PULL CIRCUITS and WIDEBAND TRANSFORMERS Push-Pull Transistors Semelab plc produces a wide range of push-pull MOSFETs and this application note is intended as a guide to some circuit design principles which are particularly appropriate when using these
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0-89000679-7X
ARRL1990;
BROWN BOVERI guanella
transistor c 5287
800w rf power amplifier circuit diagram
transmission line transformers
Design of H.F. Wideband Power Transformers
Practical Wideband RF Power Transformers
300w rf amplifier uhf
guanella
transformers 325 339
H C 5287 equivalent
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"RF power MOSFETs"
Abstract: LE17 LMP1603 LMP2003 rf mosfet power amplifier MOSFET AMPLIFIER For MOBILE RADIO
Text: RF AMPLIFIER MODULES Semelab is pleased to announce the first modules in a range designed in conjunction with LMT for Private Mobile Radio PMR systems. These modules utilise Semelab's own RF power MOSFETs in order to achieve: • High output power (5.5W typically)
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-25dBc)
LMP2003
LMP1603
"RF power MOSFETs"
LE17
LMP1603
LMP2003
rf mosfet power amplifier
MOSFET AMPLIFIER For MOBILE RADIO
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GNS430
Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon
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GNS530
GNS430
750mW
break400
1-200MHz
1-500MHz
1-400MHz
D5014UK
D1028UK
d5017
D2089
D2207UK
D1029UK
d2253
d5030
D5003UK
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MCA0616/1
Abstract: T-120-01B Skynet Electronic
Text: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology
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MIL-PRF-19500
QR216,
QR217
FM36235
M/0103/CECC/UK
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
MCA0616/1
T-120-01B
Skynet Electronic
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UC7-1A
Abstract: fast recovery 50amp SML50SUZ12S
Text: SML50SUZ12S Ultrafast Recovery Diode 1200 Volt, 50Amp TECHNOLOGY The planar passivated and standard ultrafast recovery Back of Case Cathode diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with SML
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SML50SUZ12S
50Amp
50SUZ12S
UC7-1A
fast recovery 50amp
SML50SUZ12S
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Untitled
Abstract: No abstract text available
Text: SML30SUZ12B Ultrafast Recovery Diode 1200 Volt, 30 Amp TECHNOLOGY Back of Case The planar passivated and standard ultrafast recovery Cathode diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with SML
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SML30SUZ12B
30SUZ03B
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STK412-750
Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Text: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: [email protected] Website: www.magnatec-tt.com A subsidiary of TT electronics plc
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SELT2WA10C
SELT2WC10C
SELT2WD10C
SELT2WE10C
SELT2WF10C
SELT2WH10C
SELT2WJ10C
SELT2WK10C
SELT2WA13C
SELT2WC13C
STK412-750
STK282-170-E
STK350-530t
stk*282-170
STK412 440
stk282 270
STK 412-770
stk412 770
STK282-170-E sanyo
stk433-870
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Untitled
Abstract: No abstract text available
Text: SML60SUZ06S Ultrafast Recovery Diode 600 Volt, 60Amp Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising SML 60SUZ06S Semelab’s Graded Buffer Zone technology combined with
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SML60SUZ06S
60Amp
60SUZ06S
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15suz06d
Abstract: fast recovery diode 600v 5A SML15SUZ06D
Text: SML15SUZ06D Ultrafast Recovery Diode 600 Volt, 15 Amp Back of case live Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with
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SML15SUZ06D
15SUZ06D
15suz06d
fast recovery diode 600v 5A
SML15SUZ06D
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countersunk torque settings
Abstract: torque settings for metric cap head screws torque settings metric flange D1028UK "RF MOSFETs" COUNTERSUNK SOCKET SCREW tightening torque aluminium torque of 4-40 screw for pcb
Text: Mounting Guidelines for SEMELAB RF MOSFETS Prepared by: Nick Padfield Introduction The performance of RF MOSFETs can be severely reduced by poor thermal considerations. In today’s market designers are being asked to not only make higher power systems but also make them smaller,
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SML60EUZ06B
Abstract: No abstract text available
Text: SML60EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 60Amp TECHNOLOGY Back of Case The planar passivated and enhanced ultrafast recovery Cathode diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML60EUZ06B
60Amp
60EUZ06B
O-247
SML60EUZ06B
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250JUA
Abstract: IRFY330 LE17
Text: bGE D I 0133107 OQOQSSô ti7D • SMLB I SEMELAB PLC SEMELAB IRFY330 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS ï£ FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE
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IRFY330
T0220
T0220M
T0220SM
20Kfi)
00A//it
00A/Ms
300/xs,
250JUA
IRFY330
LE17
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PDF
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500V 25A Mosfet
Abstract: IRFV420 IRFY420
Text: bOE D m Ô1331Ô7 OODOSbO 55^ •SMLB SEMELAB PLC { SEMELAB IRFY420 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS □r ï£ FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE
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T0220
T0220M
T0220SM
300/is,
LE174JB
500V 25A Mosfet
IRFV420
IRFY420
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PDF
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L014A
Abstract: 00D05 IRFY130
Text: bOE D • B1331Ô7 DOOOSSG SEMELAB 3ÔT ■ S M L B PLC SEMELAB 'T 'Z °\ -w IRFY130 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS FEATURES • HERMETICT0220 METALOR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE
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IRFY130
HERMETICT0220
T0220M
T0220
T0220SM
00A/fis
LE174JB
L014A
00D05
IRFY130
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PDF
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IRFY120
Abstract: LE17
Text: Li DE D Ô1331Û7 GDDOSMfl 721 « S I I L B SEMELAB PLC - SEMELAB T "- 3 m I IRFY120 HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS MECHANICAL DATA Dimensions in mm O " FEATURES • H ERM ETICT0220 M ETAL OR CERAM IC SURFACE M O U N T PACKAG ES
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IRFY120
HERMETICT0220
T0220M
T0220
T0220SM
100ime
00A//XS
00A//u
300//S,
IRFY120
LE17
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PDF
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Untitled
Abstract: No abstract text available
Text: bQE D • 01331Ô7 GGGDSMS - T12 ■ - SEMELAB PLC SIILB ^ r -3 ° i-^ 3 prpr M AGNA r^ tec BUZ 905P BUZ 90BP NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY,
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BUZ900P
BUZ901P
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PDF
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6040BN
Abstract: sml5540bn
Text: _ SEMELAB = ^ bOE PLC 0133107 D ODOObHß b02 • S I1LB MOS POWER 4 = SML6040BN SML5540BN SML6045BN SML5545BN SEM E LAB 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.4012 0.4012 0.4512 0.4512 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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SML6040BN
SML5540BN
SML6045BN
SML5545BN
5540BN
6040BN
5545BN
6045BN
O-247AD
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PDF
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sml4020hn
Abstract: 4020HN sml3520hn SML4020/4025HN
Text: SEMELAB bOE D PLC • 0133107 0000354 77Ô ■S M L B mi =^= mi SEME -15 SML4020HN SML3520HN SML4025HN SML3525HN LAB 400V 350V 400V 350V 23.5A 23.5A 21.0A 21.0A 0.20ft 0.20ft 0.25ft 0.25ft N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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SML4020HN
SML3520HN
SML4025HN
SML3525HN
3520HN
4020HN
3525HN
4025HN
SML4020/3520/4025/3525HN
100ms
SML4020/4025HN
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sml752r4cn
Abstract: No abstract text available
Text: bDE D SEMELAB PLC A1331Ô7 OOGDfiEb ÛG3 MSIILB IN I = ^ = SEME m i SML802R4CN SML752R4CN SML802R8CN SML752R8CN LAB 800V 750V 800V 750V 2.4012 2.40Í2 2.8012 2.80Í2 4.5A 4.5A 4.0A 4.0A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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A1331
SML802R4CN
SML752R4CN
SML802R8CN
SML752R8CN
752R4CN
802R4CN
752R8GCN
802R8CN
12802R8C
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PDF
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sml1004r2Cn
Abstract: sml1004rcn
Text: SEMELAB bDE PLC 61331Ô 7 ï 00007^4 III! M73 ISMLB MOS POWER 4 -13 llll SML1004RCN SML904RCN SML1004R2CN SML904R2CN SEME LAB 1000V 900V 1000V 900V 3.6A 3.6A 3.3A 3.3A 4.00Í1 4.00Q 4.2012 4.20Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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SML1004RCN
SML904RCN
SML1004R2CN
SML904R2CN
904RCN
1004RCN
904R2CN
1004R2CN
Factor04R2GN
100mS
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501R1BN
Abstract: sml451r1bn
Text: SEMELAB PLC bGE D 6133107 D000b3b WO ISflLB 4 MOS POWER = 1 1 = " T SML5085BN SML4585BN SML501R1BN SML451R1BN SEM E LAB 500V 450V 500V 450V y \ - \ s 9.5A 9.5A 9.0A 9.0A 0.85Q 0.Q5Q. 1.10Q 1.1 OQ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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D000b3b
SML5085BN
SML4585BN
SML501R1BN
SML451R1BN
4585BN
5085BN
451R1BN
501R1BN
O-247AD
sml451r1bn
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