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    IRFY130 Search Results

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    IRFY130 Price and Stock

    International Rectifier IRFY130CM

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFY130CM 11
    • 1 $279.408
    • 10 $271.4249
    • 100 $255.4587
    • 1000 $255.4587
    • 10000 $255.4587
    		Buy Now
    IRFY130CM 6
    • 1 $358.148
    • 10 $347.9152
    • 100 $347.9152
    • 1000 $347.9152
    • 10000 $347.9152
    		Buy Now

    International Rectifier IRFY130C

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFY130C 1
    • 1 $272.1304
    • 10 $272.1304
    • 100 $272.1304
    • 1000 $272.1304
    • 10000 $272.1304
    		Buy Now

    International Rectifier IRFY130CMSCX

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFY130CMSCX 1
    • 1 $210
    • 10 $210
    • 100 $210
    • 1000 $210
    • 10000 $210
    		Buy Now

    IRFY130 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFY130 International Rectifier HEXFET Power Mosfet Original PDF
    IRFY130 Semelab N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF
    IRFY130 International Rectifier HEXFET Transistors Scan PDF
    IRFY130 International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan PDF
    IRFY130 Semelab N-Channel Power MOSFET for Hi-REL Apps Scan PDF
    IRFY130C International Rectifier 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Original PDF
    IRFY130C Semelab N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF
    IRFY130C Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY130CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY130CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY130CM International Rectifier Power MOSFET Original PDF
    IRFY130CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY130M International Rectifier 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Original PDF
    IRFY130M Semelab N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF
    IRFY130M International Rectifier HEXFET Transistors Scan PDF
    IRFY130M International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan PDF
    IRFY130SM Semelab Hermetically Sealed N-Channel Power MOSFET for Hi-Reliability Applications Scan PDF

    IRFY130 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFY130C

    Abstract: IRFY130CM
    Text: Provisional Data Sheet No. PD 9.1286C IRFY130CM HEXFET POWER MOSFET N-CHANNEL Product Summary 100 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		1286C IRFY130CM IRFY130C IRFY130CM PDF

    IRFY130

    Abstract: 100V11A
    Text: IRFY130 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 100V 11A 0.19W FEATURES 0.89 1.14


    Original     		IRFY130 00A/ms IRFY130 100V11A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFY130 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7.0 @Temp (øC)100# IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45# Minimum Operating Temp (øC)-55


    Original     		IRFY130 PDF

    shd226302

    Abstract: IRFY130M
    Text: SENSITRON SEMICONDUCTOR SHD226302 TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .19 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY130M


    Original     		SHD226302 SHD22632 IRFY130M 250mA shd226302 IRFY130M PDF

    IRFY130M

    Abstract: No abstract text available
    Text: IRFY130M Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 14.4A RDS(ON) = 0.18Ω Ω 1.0 (0.039)


    Original     		IRFY130M O257AB O257AB O220M) 13-Sep-02 IRFY130M PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91286D POWER MOSFET THRU-HOLE TO-257AA IRFY130C,IRFY130CM 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130C 0.18 Ω 14.4A Ceramic IRFY130CM 0.18 Ω 14.4A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		91286D O-257AA) IRFY130C IRFY130CM IRFY130C IRFY130C, O-257AA PDF

    IRFY130C

    Abstract: IRFY130CM
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1286C IRFY130CM HEXFET POWER MOSFET N-CHANNEL Product Summary 100 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		1286C IRFY130CM IRFY130C IRFY130CM PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94183 POWER MOSFET THRU-HOLE TO-257AA IRFY130,IRFY130M 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130 0.18 Ω 14.4A Glass IRFY130M 0.18 Ω 14.4A Glass HEXFET® MOSFET technology is the key to International


    Original     		O-257AA) IRFY130 IRFY130M IRFY130 IRFY130, O-257AA PDF

    IRFY130C

    Abstract: IRFY130CM
    Text: PD - 91286D POWER MOSFET THRU-HOLE TO-257AA IRFY130C,IRFY130CM 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130C 0.18 Ω 14.4A Ceramic IRFY130CM 0.18 Ω 14.4A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		91286D O-257AA) IRFY130C IRFY130CM IRFY130C IRFY130C, O-257AA IRFY130CM PDF

    IRFY130C

    Abstract: TO257AB
    Text: IRFY130C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 14.4A RDS(ON) = 0.18Ω Ω 1.0 (0.039)


    Original     		IRFY130C O257AB O257AB O220M) 13-Sep-02 IRFY130C TO257AB PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD226302 TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .19 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY130M


    Original     		SHD22632 SHD226302 IRFY130M SHD226302 O-257 O-257 PDF

    IRFY130M

    Abstract: SHD226302
    Text: SENSITRON SEMICONDUCTOR SHD226302 TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, .19 Ohm, 11A MOSFET • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Equivalent to IRFY130M


    Original     		SHD226302 SHD22632 IRFY130M IRFY130M SHD226302 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFY130 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 100V 11A 0.199 FEATURES 0.89 1.14


    Original     		IRFY130 00A/ms PDF

    irf 44 n

    Abstract: IRFY130 IRFY130C IRFY130CM IRFY130M 144A
    Text: PD - 94183 POWER MOSFET THRU-HOLE TO-257AA IRFY130,IRFY130M 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130 0.18 Ω 14.4A Glass IRFY130M 0.18 Ω 14.4A Glass HEXFET® MOSFET technology is the key to International


    Original     		O-257AA) IRFY130 IRFY130M IRFY130 IRFY130, O-257AA irf 44 n IRFY130C IRFY130CM IRFY130M 144A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFY130C Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)14.4 I(DM) Max. (A) Pulsed I(D)9.1 @Temp (øC)100# IDM Max (@25øC Amb)57.6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75# Minimum Operating Temp (øC)-55


    Original     		IRFY130C PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 PDF

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


    Original     		IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261 PDF

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS PDF

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original     		DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF PDF

    L014A

    Abstract: 00D05 IRFY130
    Text: bOE D • B1331Ô7 DOOOSSG SEMELAB 3ÔT ■ S M L B PLC SEMELAB 'T 'Z °\ -w IRFY130 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS FEATURES • HERMETICT0220 METALOR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE


    OCR Scan     		IRFY130 HERMETICT0220 T0220M T0220 T0220SM 00A/fis LE174JB L014A 00D05 IRFY130 PDF

    IRFY130

    Abstract: SFF130J
    Text: §s i_ PRELIMINARY SFF130J SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) ■ Fax: (714) 522-7424 14 AMP 100 VOLTS 0.16 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • • • • •


    OCR Scan     		670-SSDI SFF130J IRFY130 O-257 SFF130J PDF

    Untitled

    Abstract: No abstract text available
    Text: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17


    OCR Scan     		IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110* N7335 JANTXV2N7335 IRFV064 IRFV360 IRFV460 PDF

    irfm9034

    Abstract: No abstract text available
    Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel


    OCR Scan     		IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034 PDF

    2N7334

    Abstract: irfg9110 H24 SMD
    Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130


    OCR Scan     		IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD PDF