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    C322 diode

    Abstract: 12n05 p12n05 SEFM12H05
    Text: S G S-T H O n S O N 07E D 73C 17 598 712^237 D O lfllD l V N-CHANNEL POWER MÛS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors, ABSOLUTE M AXIM U M RATINGS


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    PDF SEFM12NQ5 SEFM12N06 SEFP12N05 SEFP12N06 0V/60V 12N05 12N06 300jus, C322 diode p12n05 SEFM12H05