SD1007
Abstract: SD1007 transistor thomson microwave transistor
Text: S —THOMSON SOLID STATE MICROWAVE SD1007 THOMSON-CSF COMPONENTS CORPORATION Montgomery vilje, PÀ 18936 • 215 362-8500 ■ JW X .510-661-7299 . . . CATV/MATV AMPLIFIER TRANSISTOR DESCRIPTION SSM device type SD 1007-1 is a silicon epitaxial NPN-planar transistor
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SD1007
SD1007-1
SD1007
SD1007 transistor
thomson microwave transistor
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118-136 mhz
Abstract: sd1222-6 transistor rf vhf
Text: S G S'•TH O M SO N QSC I 7=1^237 D G Q G 17E 3 SOLID STATE MICROWAVE SD1222-6 JHOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 15 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD 1222-6 is an epitaxial silicon NPN-planar transistor
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SD1222-6
aaGG173
10/if
118-136 mhz
transistor rf vhf
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Unelco
Abstract: THOMSON csf j215 200w transistor amplifier circuit thomson csf v 271 thomson sd1143 Arco 423 thomson rf power transistor thomson csf rf power transistor
Text: S G S-T H O M SO N DMC D | 7=12^37 0000D3M 2 | - S O L ID S T A T E M I C K U W A V t SDÌ 143 1 THOMSON CSF COMPONENTS CORPORATION ; Montgomeryville, PA 18936 «J215 362-8500 *J W X 510-661-7299 \ _ ;_._ ^ VHF COMMUNICATIONS TRANSISTOR DESCRIPTION
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0000D3M
SD1143
33jUh
Unelco
THOMSON csf
j215
200w transistor amplifier circuit
thomson csf v 271
thomson sd1143
Arco 423
thomson rf power transistor
thomson csf rf power transistor
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TACAN transistor
Abstract: sd1532
Text: 7 tv G S-THOM SON 0QG0137 0C|C D SOLID STATE MICR ow AVE 1 SD 1532 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936 * 215 362-8500 * TWX 510-661-7299 J M ICRO W AVE POWER TR A N SISTO R IF F , DM E, TACAN DESCRIPTION The SSM SD1532 is a gold metalized, silicon NPN power transistor.
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0QG0137
SD1532
1150MHz
96ICAL
IFF/50
DME/50
TACAN/50
TACAN transistor
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J33 TRANSISTOR
Abstract: SD1219 SD1219-5
Text: 04C S G S -THOMSON D I 7 ^ 2 3 7 GGGÜlGfc. 1 | D SOLID S T A T E M ICRO WAV* SDÌ 219-5 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936« 215 855-8400 •TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSS device type SD1219-5 is a 28.0 volt epitaxial silicon NPN planar
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SD1219-5
J33 TRANSISTOR
SD1219
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SD1133
Abstract: No abstract text available
Text: _S G S -T H O M S O N DSC D | Q O Q a ib t . r a S O L ID ST A T E M IC R O W A V E SD 1133 1 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 10 W, 12.5 V VH F PO W ER T R A N S IS T O R DESCRIPTION The SD1133 is an epitaxial silicon NPN-planar transistor designed
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SD1133
120PF
1000PF
01/iF
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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SD 1496 transistor
Abstract: TSD2M350F
Text: 30 E T> n 7 ^ 5 3 7 QG3D534 SGS-THOMSON ^ ^ HLJOTMWi ¿ 5 7 '5 7 TSD2M350F TSD2M350V s 6 S-THOMSON N - CHANNEL ENHANCEMENT MODE _ ISOFET POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V TSD2M350F/V dss 400 V RDS on 0.150 Id n 30 A • . . . HIGH CURRENT POWER MOS MODULE
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QG3D534
TSD2M350F
TSD2M350V
TSD2M350F/V
T-91-20
O-240)
PC-029«
SD 1496 transistor
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SGSP201
Abstract: SGS-THOMSON 435
Text: r i 7 SGS-THOMSON ^ 7 # MtgœiLIÊTrœiOÊS SGSP201 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS SGSP201 100 V ^DS on 1.4 fi Id 2.0 A • HIGH SPEED SW ITCHING APPLICATIO NS • ULTRA FAST SW ITCHING • EASY DRIVE FOR REDUCED COST AND SIZE
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SGSP201
T-194
SGSP201
SGS-THOMSON 435
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STHV102
Abstract: transistor STHV102 BALLAST 380V ctv circuit diagram
Text: SGS-THOMSON ^ 7 #„ [ÜDlgœtEtLIKg'irMRODtgi STHV102 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STHV102 • • • • V DSS ^DS on 1000 V 3.5 fì 4.2 A 1000 V - VERY HIGH VOLTAGE FOR SMPS EASY DRIVE - REDUCED COST AND SIZE
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STHV102
STHV102
transistor STHV102
BALLAST 380V
ctv circuit diagram
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transistor di 556
Abstract: SGSP477
Text: T SGS-THOMSON ^7# MÊfôimiiËïrMMÊI SGSP477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS on SGSP477 200 V 0.17 fi Id 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING
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SGSP477
O-218
transistor di 556
SGSP477
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SGSP319
Abstract: No abstract text available
Text: r=Z SGS-THOMSON ^7# llD g»[l[L(l(g™iD(êi SGSP319 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^ D S (o n SGSP319 500 V 3.8 n 2.8 A HIGH SPEED SWITCHING APPLICATIONS 500V - HIGH VOLTAGE FOR SMPS ULTRA FAST SWITCHING
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SGSP319
SGSP319
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MRF245
Abstract: SD1076 CM45-12A BLY22 sd1238 BLX66 MM1669 PT8828 BLY94 PT9780
Text: 450 .512 MHz class C for mobile applications ii com m unications m obiles UHF, classe C TYPE PACKAGE CONFIG. THOMSON-CSF P ou t Vcc Pin min Wl (V (MHz) (W) Gp min (dB) T O -46 (CB-4011 SD 1132-4 SD 1115-2 SD 1482 XO-72 SL TO-117 SL .280 4L STUD (B) CE
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XO-72
O-117
02N6082
BM80-12
SD1416
MM1601
MRF631
MRF245
SD1076
CM45-12A
BLY22
sd1238
BLX66
MM1669
PT8828
BLY94
PT9780
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SD1076
Abstract: MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510
Text: 2 - 30 MHz linear SSB applications applications linéaires BLU TYPE PACKAGE CONFIG. THOMSON-CSF V CC V Pout (PEP) Pin fo (W) (W) (MHz) Gp min (dB) IMD max (dB) 4LFL 4LFL 4LFL 4LFL CE CE CE CE 12,5 12,5 12,5 12,5 > > > > 20 50 75 100 30 30 30 30 0,63 1,6
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BAM20
2N5642
B25-12
2N60822N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1076
MRF245
2n918
PT8811
BLY94
pt8710
PT9788
PT9780
SD1238
MRF510
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mrf245
Abstract: SD1416 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072
Text: 88. 108 MHz class C for FM tansmitters émetteurs/réémetteurs FM, classe C TYPE SD 1457 SD 1460 PACKAGE CONFIG. Vcc CE CE 28 28 . 500 4LFL . 500 4LFL Pout W (V) > THOMSON-CSF fo (MHz) Pin (W) Gp (dB) (% ) 108 108 7,5 20 > 10 9 75 75 75 160 r!c .380 4L FL
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SD2N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N3553
mrf245
PT9788
PT8710
2N5642
BLY94
PT8811
BLX66
PT8740
2N4072
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON HDeæHLISTrisîQÜDlgS STN2N06 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR ADVANCE DATA TYPE STN2N06 V d ss R DS on I dcont 60 V < 0.250 £2 2 A . TYPICAL RDS(on) =0.21 Q . AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW
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STN2N06
OT-223
OT-223
T2N06
OT223
P008B
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Untitled
Abstract: No abstract text available
Text: 3QE D • 7 ^ 5 3 7 QQ3074Q T ■ £Z7 SGS-THOMSON Ä 7# [* ^ « [IO T a [* S IR F K 4 H 4 5 0 s g s - thomson" N - CHANNEL ENHANCEMENT MODE -POWER MOS TRANSISTOR MODULE TYPE IRFK4H450 V d ss RDS(on) Id 500 V 0.1 n 44 A ■ . « . HIGH CURRENT POWER MOS MODULE
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3074Q
IRFK4H450
T-91-20
O-240)
PC-029«
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TACAN transistor
Abstract: Thomson-CSF amplifier Solid State Microwave
Text: G S-THOMSON Ü4C D 1 7 ^ 5 ^ 3 7 gOOOlBS 5 SOLID STATE MICROWAVE si-or I 1522-2 ; THOMSON-CSF COMPONENTS CORPORATION j Montgomeryville, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 MICROWAVE POWER TRANSISTOR IFF, DME, TACAN DESCRIPTION The SSM SD1522-2 is a gold metalized, silicon NPN power transistor.
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SD1522-2
EFF/28V
DME/28V
TACAN/28V
TACAN transistor
Thomson-CSF amplifier
Solid State Microwave
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sgsp358
Abstract: tr/pcb-3/SGSP358
Text: SGS-THOMSON SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^DS on SGSP358 50 V 0.3 a Id 7A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS:
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SGSP358
O-220
sgsp358
tr/pcb-3/SGSP358
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Untitled
Abstract: No abstract text available
Text: r^7 SGS-THOMSON KlôtgœillLIKg'inSÛRSDtgi BUZ74 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^ D S o n BUZ74 500 V 3.0 Q 2.4 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 500V FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION
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BUZ74
100KHz
O-220
00A//iS
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Untitled
Abstract: No abstract text available
Text: rZ7 SGS-THOMSON ^ 7 # , SMi]0 » llLI(gir»R!lö(gi BUZ45A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ45A 500 V 0.8 n 8.3 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT < 100KHz • EASY DRIVE - FOR REDUCED COST AND
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BUZ45A
100KHz
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BUZ76A
Abstract: No abstract text available
Text: ¿ = 7 SCS THOMSON BUZ76A ilO g[^ö i!Li ]I[HMO©§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss ^DS(on) BUZ76A 400 V 2.5 ß 2.6 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE
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BUZ76A
O-220
BUZ76A
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schematic diagram UPS
Abstract: BUZ72A
Text: rZ 7 SGS-THOMSON BUZ72A 5SlD g[BÏ I!L[l(ginsl©lfflD(gl N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS(on BUZ72A 100 V 0.25 fi 'd 9 A • 100 VOLTS - FOR UPS APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦
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BUZ72A
O-220
00A/itS
schematic diagram UPS
BUZ72A
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hv102
Abstract: transistor STHV102 ctv circuit diagram transistor AJPS 609 transistor
Text: SGS-THOMSON HD K ô iLi(gU (ô)[MD(gi S T H V 102 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STHV102 • • • • V DSS ^DS(on) 1000 V 3.5 fl Id 4.2 A 1000 V - VERY HIGH VOLTAGE FOR SMPS EASY DRIVE - REDUCED COST AND SIZE
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STHV102
hv102
transistor STHV102
ctv circuit diagram
transistor
AJPS
609 transistor
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