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    SAMSUNG TOGGLE NAND Search Results

    SAMSUNG TOGGLE NAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy
    MC2101F Rochester Electronics LLC MC2101F - Dual NAND Logic Gate Visit Rochester Electronics LLC Buy

    SAMSUNG TOGGLE NAND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG MCP

    Abstract: samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung nand sdram mcp KAE00C400M UtRAM Density MCP NAND, DRAM, NOR
    Text: Preliminary MCP MEMORY KAE00C400M Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 64M Bit (4Mx16) UtRAM *2 Revision History Revision No. History Draft Date Remark 0.0 Initial draft. May 29, 2002 Preliminary 0.1 Revise - Change UtRAM output load(CL) from 50pF to 80pF


    Original     		PDF KAE00C400M 16Mx8) 4Mx16) 111-Ball SAMSUNG MCP samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung nand sdram mcp KAE00C400M UtRAM Density MCP NAND, DRAM, NOR

    toggle mode nand samsung

    Abstract: samsung toggle mode NAND NAND FLASH SAMSUNG K5Q6432YCM-T010 T010 SAMSUNG NAND Flash Qualification Report 64mb nand flash
    Text: K5Q6432YCM - T010 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Dec. 19th 2000 Advanced Information 0.1 Changed Device name K5Q6420YCM-TO70 -> K5Q6432YCM-T010


    Original     		PDF K5Q6432YCM 2Mx16) K5Q6420YCM-TO70 K5Q6432YCM-T010 100ns. 200uA 250uAo 69-Ball 08MAX toggle mode nand samsung samsung toggle mode NAND NAND FLASH SAMSUNG K5Q6432YCM-T010 T010 SAMSUNG NAND Flash Qualification Report 64mb nand flash

    NAND FLASH SAMSUNG

    Abstract: samsung toggle mode NAND toggle mode nand samsung K5Q6432YCM-T010 T010 DQ01
    Text: K5Q6432YCM - T010 Preliminary Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Dec. 19th 2000 Advanced Information 0.1 Changed Device name


    Original     		PDF K5Q6432YCM 2Mx16) K5Q6420YCM-TO70 K5Q6432YCM-T010 100ns. f10us 69-Ball 08MAX NAND FLASH SAMSUNG samsung toggle mode NAND toggle mode nand samsung K5Q6432YCM-T010 T010 DQ01

    K9WBG08U1M

    Abstract: Toggle DDR NAND flash K9WBG08U1M-PIB0 Samsung "NAND Flash" "ordering information" K9WBG08U1M-PCK0 k9wbg08u1 K9WBG08U1M-PIB0T NAND flash k9wbg08 Samsung EOL
    Text: home > Products > Flash > NAND Flash> Products > K9WBG08U1M Flash Product Search NAND Flash NAND Flash > SLC -large block > K9WBG08U1M Part Number Search Products package & packing EOL Products Toggle DDR NAND Flash Flash SSD NOR Flash Flash Cards production & availability


    Original     		PDF K9WBG08U1M K9WBG08U1M IIK00 -IIB00 Toggle DDR NAND flash K9WBG08U1M-PIB0 Samsung "NAND Flash" "ordering information" K9WBG08U1M-PCK0 k9wbg08u1 K9WBG08U1M-PIB0T NAND flash k9wbg08 Samsung EOL

    SAMSUNG MCP

    Abstract: samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60
    Text: SEC Only MCP MEMORY KAB0xD100M - TxGP Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 20, 2002


    Original     		PDF KAB0xD100M 8Mx8/4Mx16) 8Mx16) 2Mx16) 39page) 43page) 80-Ball SAMSUNG MCP samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60

    MCP 67 MV- A2

    Abstract: SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density
    Text: KAA00B209M-TGxx MCP MEMORY Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/32M Bit(2Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. January 15, 2002 Advance 0.1


    Original     		PDF KAA00B209M-TGxx 16Mx16) Flash/32M 2Mx16) UtRAM/128M 2Mx16x4Banks) 127-Ball 80x12 08MAX MCP 67 MV- A2 SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density

    samsung toggle mode NAND

    Abstract: s3c2450 SMDK2450 Samsung EMMC "boot mode" movinand S3C64 samsung emmc boot Samsung eMMC irom application note s3c245
    Text: Application Note Internal ROM Booting S3C2450/51/16X RISC Microprocessor Oct 16, 2008 Preliminary REV 0.041 Preliminary product information describe products that are in development, for which full characterization data and associated errata are not yet available.


    Original     		PDF S3C2450/51/16X SMDK2450/51/16 samsung toggle mode NAND s3c2450 SMDK2450 Samsung EMMC "boot mode" movinand S3C64 samsung emmc boot Samsung eMMC irom application note s3c245

    s3c2450

    Abstract: samsung EMMC user guide Samsung board Board design guide eMMC SAMSUNG emmc samsung emmc boot movinand irom application note iNAND eMMC 4 41 emmc spec SAMSUNG moviNAND
    Text: Application Note Internal ROM Booting S3C2450X RISC Microprocessor June 25, 2008 Preliminary REV 0.03 Preliminary product information describe products that are in development, for which full characterization data and associated errata are not yet available.


    Original     		PDF S3C2450X SMDK2450 s3c2450 samsung EMMC user guide Samsung board Board design guide eMMC SAMSUNG emmc samsung emmc boot movinand irom application note iNAND eMMC 4 41 emmc spec SAMSUNG moviNAND

    AO222

    Abstract: OA211 diode oa31 diode AO211 ND3B LD5Q AO2222 OA31 AO311 datasheet for full adder and half adder
    Text: Internal Macrocells 3 Contents Overview . 3-1 Summary Tables. 3-2


    Original     		PDF STD131 AO222 OA211 diode oa31 diode AO211 ND3B LD5Q AO2222 OA31 AO311 datasheet for full adder and half adder

    samsung

    Abstract: ao21 mux 232 AO211 AO22
    Text: Internal Macrocells 3 Contents Overview . 3-1 Summary Tables. 3-2


    Original     		PDF STDL130 samsung ao21 mux 232 AO211 AO22

    SAMSUNG MCP

    Abstract: MCP NOR FLASH SDRAM MCP 67 MV- A2 UtRAM Density SAMSUNG mcp Reliability spec
    Text: Preliminary MCP MEMORY KAA00B606A Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/64M Bit(4Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. July 18, 2002


    Original     		PDF KAA00B606A 16Mx16) Flash/64M 4Mx16) UtRAM/128M 2Mx16x4Banks) 90/100ns 127-Ball 80x12 SAMSUNG MCP MCP NOR FLASH SDRAM MCP 67 MV- A2 UtRAM Density SAMSUNG mcp Reliability spec

    JTAG2440

    Abstract: s3c2410 JTAG2410
    Text: JTAG-Booster for Samsung S3C24xx P.O: Box 1103 Kueferstrasse 8 Tel. +49 7667 908-0 [email protected] • • • • D-79200 Breisach, Germany D-79206 Breisach, Germany Fax +49 (7667) 908-200 http://www.fsforth.de JTAG-Booster for Samsung S3C24xx Copyright  1995.2003:


    Original     		PDF S3C24xx D-79200 D-79206 S3C24xxa JTAG2440 s3c2410 JTAG2410

    FD6S

    Abstract: AO222 ND3B FD3S AO322 MX2D2 FD1S AO211 STD150 SCG16
    Text: Internal Macrocells 3 Contents Overview . 3-1 Summary Tables. 3-2


    Original     		PDF STD150 FD6S AO222 ND3B FD3S AO322 MX2D2 FD1S AO211 STD150 SCG16

    AO222

    Abstract: FD6S SCG12 OA31 ND3B AO2222 FD2D2 AO322D2 LD6QD2 oa221
    Text: Internal Macrocells 3 Contents Overview . 3-1 Summary Tables. 3-2


    Original     		PDF STDH150 AO222 FD6S SCG12 OA31 ND3B AO2222 FD2D2 AO322D2 LD6QD2 oa221

    KBB0XA300M

    Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
    Text: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary


    Original     		PDF KBB0xA300M 8Mx8/4Mx16) 8Mx16) 2Mx16) 80-Ball 80x12 transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    lpddr2

    Abstract: lpddr2 datasheet samsung lpddr2 samsung* lpddr2 LPDDR2 1Gb Memory lpddr2 spec lpddr1 samsung toggle mode NAND lpddr2 samsung DDR3L lpddr2
    Text: Green Memory Moving into Driver’s Seat Speakers: Sylvie Kadivar, PhD, Director, DRAM Strategic Marketing Mueez Deen, Director of Mobile Memory Marketing Steven Peng, SSD Technical Marketing Samsung Semiconductor, Inc. 1/? Agenda Industry Trends: IT & Mobile


    Original     		PDF

    SAMSUNG DDR4

    Abstract: samsung toggle mode NAND samsung ddr3 RAM DDR2 samsung 30nm green ddr3 HS21XM ddr2 ram slots for laptop Samsung 8Gb MLC Nand flash DIMM DDR4 socket DDR3 DIMM spec samsung
    Text: Optimizing Virtualization using Advanced Memory and Storage Technology Speakers: Sylvie Kadivar, PhD, Director, DRAM Strategic Marketing, Samsung Steve Weinger, Director, Flash Marketing, Samsung 1/? No.2 for 8 years in Semiconductor Industry *Source : Gartner March 2010


    Original     		PDF 320GB SAMSUNG DDR4 samsung toggle mode NAND samsung ddr3 RAM DDR2 samsung 30nm green ddr3 HS21XM ddr2 ram slots for laptop Samsung 8Gb MLC Nand flash DIMM DDR4 socket DDR3 DIMM spec samsung

    samsung date code decorder

    Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
    Text: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark


    Original     		PDF KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M 4Mx16) 2Mx16) 512Kx16) LIM-011025 samsung date code decorder SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp

    samsung toggle mode NAND

    Abstract: NAND FLASH SAMSUNG S3CI9E0X01 toggle mode nand samsung 1448H NAND FLASH DDP samsung 1Gb nand flash 1030h nand flash spare area assignment toggle nand
    Text: S3CI9E0X01 FLASH INTERFACE DEVICE S3CI9E0X01 SPECIFICATION Version : Ver. 1.0 Date : Jul. 16. 2003 Samsung Electronics Co., LTD Semiconductor Flash Memory Product Planning & Applications SAMSUNG ELECTRONICS 1 S3CI9E0X01 FLASH INTERFACE DEVICE Revision History


    Original     		PDF S3CI9E0X01 S3CI9E0X01 samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung 1448H NAND FLASH DDP samsung 1Gb nand flash 1030h nand flash spare area assignment toggle nand

    K9F2G08U0B-PCB0

    Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
    Text: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●


    Original     		PDF K9F2G08U0B 07-Sep-2010 K9F2G08U0B-PCB0 samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND

    F221h

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 F221h

    Toggle DDR NAND flash

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 Toggle DDR NAND flash

    Samsung 2Gb 3V MLC Nand flash

    Abstract: KFM5616Q1A-DEB5
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 Samsung 2Gb 3V MLC Nand flash KFM5616Q1A-DEB5