AS8S512K3
Abstract: No abstract text available
Text: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface
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AS8S2M32PEC
2Mx32
M0-47AE
AS8S2M32
AS8S2M32PEC
AS8S512K3
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply
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AS4DDR32M72PBG1
32Mx72
333Mbps
23mm-1
208-PBGA
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
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A43L0616A
Abstract: A43L0616AV
Text: A43L0616A 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue December 4, 2000 Preliminary 0.1 Add input/output capacitance specification February 13, 2001
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A43L0616A
A43L0616A
A43L0616AV
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IS46R16160B
Abstract: zentel is43r16160b
Text: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/
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IS43R83200B,
IS46R83200B
IS43R16160B,
IS46R16160B
32Mx8,
16Mx16
256Mb
conx16
66-pin
IS46R16160B
zentel
is43r16160b
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Memory
Abstract: FTS8L32512V
Text: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.
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FTS8L32512V
512Kx32
FTS8L32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
512Kx8,
FTI8K32512V
Memory
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ACT-D16M96S
Abstract: BSA1 BS-B1
Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM
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ACT-D16M96S
16MegaBit
50-MHz
192-cycle
SCD3370
BSA1
BS-B1
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GPR323A16A
Abstract: No abstract text available
Text: GPR323A16A 16M x 16 bit Synchronous DRAM SDRAM Dec. 5, 2008 Version 1.0 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS
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GPR323A16A
GPR323A16A
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SML1216W
Abstract: No abstract text available
Text: 7 t^ D 7 4 1 DQ01bl2 fl4b ISAKJ « ä iM I i Ä . '. • ? " SANKEN SANKEN LIGHT EMITTING DIODES - ,7 ,r • , - '■ : ë , l - j- '■'■■■ . ¿ ií:4 ■■ T-1 3 /4 Bicolor Light Emitting Diode SML1216W SML1516W SML1616C FEATURES • Bright 3 Color Red, Green and Yellow
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DQ01bl2
SML1216W
SML1516W
SML1616C
1616C
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Eupec diode
Abstract: AL 1450 DV
Text: EUPEC blE D • 34032T7 DQ01211 OLM H U P E C AD 60 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische VorwärtsSpitzensperrspannung repetitive peak forward off-state voltage t.jj — —40°C . tvj max
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34032T7
DQ01211
Eupec diode
AL 1450 DV
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4-40NC-2B
Abstract: No abstract text available
Text: _ D TbE • b34bf i GS DQ01MT4 Ô7Ô ■ MSL Series Single Pole Multi-Position Slide Switches Contact rating: 200 mA at 125 VAC or 30 VDC • • • • • 1P3T MSL33 .906 [2 3 .0 0 ] mA N O T IC E W ITH O U T Actuator: Steel Terminal seal: Epoxy
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b34bflGS
4-40NC-2B.
4-40NC-2B
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Photodiode vactec
Abstract: Photodiode-Array
Text: BOBGbDT DQ01D76 7Ô7 • V C T 5bE D VTP Process Photodiodes E G 8. G VTP6085/2IR T-41-51 VACTEC PACKAGE DIMENSIONS inch mm .5 55 (14 10) CASE 15B PRODUCT DESCRIPTION Dual channel, common cathode, large area planar silicon photodiode array mounted in a three lead TO-8 hermetic
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D001D7Ã
VTP6085/2IR
T-41-51
1001c,
Photodiode vactec
Photodiode-Array
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6DI15S-050
Abstract: 6DI10A-050 IC M605 6di30a-120 1DI100MA-050 6DI30A-050 EVF31H-035 2DI150M-120 M605 1DI200M-120
Text: COLLMER SEMICONDUCTOR INC MAE D I 25307=12 DQ01574 5GÛ « C O L <& Power Darlington Modules 4 PACK/6 PACK VCEX' VCEO Device Type Vceo Volts VCEO Volts sus Volts ic Pc cont. Watts Amps (per Xstr) Switching time (Max.) ton ts tf jisec. usee. ^sec. Ic Amps.
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DQ01574
EVF31H-035
EVF31H-050
4DI30A-030
2DI50M-12Û
2DI75M-120
2DI100M-120
2DI150M-120
6DI15M-120
6DI30M-120
6DI15S-050
6DI10A-050
IC M605
6di30a-120
1DI100MA-050
6DI30A-050
M605
1DI200M-120
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Untitled
Abstract: No abstract text available
Text: D S 1 2 3 0 Y /A B DALLAS SEMICONDUCTOR FEATURES DS1 230Y/ AB 256K N onvolatile SRAM PIN ASSIGNMENT A14 111 281 A12 112 E 271IW A7 113 261IA13 A6 114 251IA8 A5 115 241IA9 A4 116 231IA11 A3 117 221I A2 118 211I A10 A1 119 201I^ A0 1110 191I DQ7 DQ01111 181I DQe
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DS1230Y)
DS1230AB)
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LC6502
Abstract: LC6500 LC6510 LC6510C
Text: SANYO SEMICONDUCTOR CORP 7b C</ DE^ V W O T t . DQ01ÖH4 0 t 'LC651 OC c -m o s L S i CIRCUIT DRAWING N0.101S SINGLE-CHIP 4-BIT MICROCOMPUTER FOR USE IN CONTROL-ORIENTED APPLICATIONS ^ 3 0 ^ ÌP ^ The LC6510C is a high-end model belonging to the single-chip 4-bit microcomputer LC6500 series fabri
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LC651
LC6510C
LC6500
800kHz
400kH
800kHz
1143kHx
LC6502
LC6510
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m28 transistor
Abstract: 2SC2340 NE56900 NE56953E NE56954 NE56987 S21E
Text: N E C / .CALIFORNIA 1SE D N E ' H b427414 DQ01331 3 NE56900 NE56953E NE56954 NE56987 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • A M P L IF IE R P E R F O R M A N C E : 550 mW with 11.5 d B Gain at 2 GHz 425 mW with 7.5 d B Gain at 4 G H z
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b427414
NE56900
NE56953E
NE56954
NE56987
NE569
NE56987
m28 transistor
2SC2340
S21E
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lm814
Abstract: ID32-001
Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
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TC59LM814/06BFT-22
TC59LM814/06BFT
TC59LM814BFT
304-words
TC59LM806BFT
LM814/06B
FT-22
lm814
ID32-001
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Untitled
Abstract: No abstract text available
Text: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted
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E2G1059-18-74
16M/18Mb
MSM5716C50/M
5718C50/
D5764802
/64-M
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MC68366
Abstract: MCM68384 FUH -29A001B A1018 Microcomputer 8096 marking a5t M6800 MCM68365 MCM68365-25 MCM68A316E
Text: M O TO R O LA 64K BIT READ ONLY MEMORY MOS The MCM68365 is a mask-programmable byte-organized memory designed for use in bus-organized systems. It is fabricated with N-channel silicorvgate technology. For ease of use, the device operates from a single power supply, has compatibility w ith TTL, and needs no
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MCM68365
MCM68365
M6800
MCM68366
MC68366
MCM68384
FUH -29A001B
A1018
Microcomputer 8096
marking a5t
MCM68365-25
MCM68A316E
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5962-9470801MPA
Abstract: 907W SKN 1M 40 CLC428 CLC428A8B CLC428AJE CLC428AJP CLC428ALC DS428 21 SMD transformer
Text: Comlinear Dual Wideband, Low-Noise, Voltage-Feedback Op Amp C O R P O R A T I O N CLC428 APPLICATIONS: FEATURES: • • • • • • • • Wide unity-gain bandwidth: 160MHz • Ultra-low noise: 2.0nV/VHz • Low distortion: -78dBc 2nd 2MHz -62/-72dBc (10MHz)
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CLC428
160MHz
-78dBc
-62/-72dBc
10MHz)
CLC428
2000pF.
500i2,
120pF.
5962-9470801MPA
907W
SKN 1M 40
CLC428A8B
CLC428AJE
CLC428AJP
CLC428ALC
DS428
21 SMD transformer
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BD157
Abstract: BD158
Text: BD157, B0158 BDI5 7 ,158 NPN PLASTIC POWER TRANSISTORS Low Power Fast Switching, Output Stages for TV Radio and Audio Output Amplifiers PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0 .7 0.9 E F 2 .2 5 TYP.
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BD157,
BD158
BDI57
23633T4
000120D
BD157
BD158
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HY514460
Abstract: No abstract text available
Text: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY514460
Kx164
16-bit
400mil
40pin
40/44pin
1AC12-00-APR93
DDQ1553
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 5 VOLT FlashFile MEMORY 28F160S5 and 28F320S5 x8/x16 Two 32-Byte Write Buffers — 2 \is per Byte Effective Programming Time Operating Voltage 5 V Vcc — — 5 V V pp 70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 Mbit) High-Density Symmetrically-Blocked
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28F160S5
28F320S5
x8/x16)
32-Byte
64-Kbyte
28F016SV
28F016SA
AP-607
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sm 0038 tsop
Abstract: E-8BS16
Text: MSC23S4641 E-8BS16 98.06.22 O K I Semiconductor M S C 2 3 S 4 6 4 1 E -8 B S 1 6 4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): DESCRIPTION The Oki MSC23S4641 E-8BS16 is a fully decoded, 4,194,304 x 64bit synchronous dynam ic random access memory com posed of sixteen 16Mb DRAMs(2Mx8) in TSOP
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MSC23S4641
E-8BS16
E-8BS16
64bit
168-pin
64-Bit
sm 0038 tsop
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