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    SAMSUNG GDDR4

    Abstract: GDDR4 K4D263238 84 FBGA GDDR K4J52324Q SAMSUNG GDDR3 gddr3 graphics card SAMSUNG SEMICONDUCTOR
    Text: Samsung High-Performance GDDR4 Graphics Memory Faster, Denser Memory for Advanced 3D Graphics Requirements Samsung’s GDDR4  is next-generation, Three-dimensional graphics applications require advanced memory with exceptional performance. Samsung’s GDDR4 memory delivers an ultra-fast


    Original     		PDF 512Mb 4Mx32 K4D263238 8Mx16 K4D261638 128Mb DS-07-GDRAM-001 SAMSUNG GDDR4 GDDR4 K4D263238 84 FBGA GDDR K4J52324Q SAMSUNG GDDR3 gddr3 graphics card SAMSUNG SEMICONDUCTOR

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    gddr3

    Abstract: SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA
    Text: Samsung HighPerformance 512Mb GDDR3 Graphics Memory Samsung’s GDDR3  is next-generation, JEDEC-standard graphics memory for the most advanced 3D applications. Faster, Denser Memory for Advanced 3D Graphics Requirements Samsung graphics memory has played an important


    Original     		PDF 512Mb 200Mhz 128Mb 8Mx16 K4D261638F-TC5A DS-06-GDRAM-001 gddr3 SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    samsung ddr3

    Abstract: DDR3 socket datasheet DDR3 jedec ddr2 laptop pin DDR3 DIMM 240 pin names "DDR3 SDRAM" DDR3 1gb dimm DDR3 DIMM DDR3 dimm socket DDR3 socket
    Text: Samsung DDR3 SDRAM Next-Generation Memory Will Reach 1.6Gb/second Samsung DDR3 Unbuffered DIMMs will be available in densities from 256MB to 2GB and DDR3; component densities are 512Mb to 1Gb. Massive Bandwidth and Low Power Consumption Tomorrow’s main memory standard, Samsung


    Original     		PDF 256MB 512Mb Samsun378B2873CZ0-C 128Mx8) 256Mx64 M378B5673CZ0-C DS-06-DRAM-006 samsung ddr3 DDR3 socket datasheet DDR3 jedec ddr2 laptop pin DDR3 DIMM 240 pin names "DDR3 SDRAM" DDR3 1gb dimm DDR3 DIMM DDR3 dimm socket DDR3 socket

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    samsung ddr3

    Abstract: DDR3 sodimm 8gb samsung M395T2953EZ4 DDR3 DIMM 240 pin names m470t5663cz3 samsung DDR3 SDRAM 2GB 1GB DDR2 4 banks SODIMM ddr2 8gb samsung ddr-3 Datasheet Unbuffered DDR2 SDRAM DIMM
    Text: Samsung High-performance SDRAM for Main Memory DDR2 and DDR3 Deliver High Bandwidth with Low Power Consumption for Servers, Desktops and Portables Advanced Samsung Memory for Computing Applications First to Market with Advanced SDRAM Double Date Rate SDRAM is today’s standard for high-performance servers, desktops and portable


    Original     		PDF BR-07-SDRAM-001 samsung ddr3 DDR3 sodimm 8gb samsung M395T2953EZ4 DDR3 DIMM 240 pin names m470t5663cz3 samsung DDR3 SDRAM 2GB 1GB DDR2 4 banks SODIMM ddr2 8gb samsung ddr-3 Datasheet Unbuffered DDR2 SDRAM DIMM

    timing controller SHART

    Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
    Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		PDF K4U52324QE 512Mbit 32Bit 136Ball timing controller SHART T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4

    SAMSUNG GDDR4

    Abstract: K4U52324QE GDDR4 twido K4U52324QE-BC09 HYNIX charge pump T21N 136ball K4U52324QE-BC07 k4u52324qe-bc08
    Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.2 May 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		PDF K4U52324QE 512Mbit 32Bit 136Ball SAMSUNG GDDR4 K4U52324QE GDDR4 twido K4U52324QE-BC09 HYNIX charge pump T21N K4U52324QE-BC07 k4u52324qe-bc08

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    K4S161622H-UC60

    Abstract: No abstract text available
    Text: K4S161622H CMOS SDRAM 16Mb H-die SDRAM Specification 50 TSOP-II with Pb-Free RoHS compliant Revision 1.4 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.4 August 2004 K4S161622H CMOS SDRAM Revision History


    Original     		PDF K4S161622H 183MHz 166MHz K4S161622H-UC60

    samsung GDDR5

    Abstract: K4D263238K-VC40 GDDR5 application note samsung K4D263238K-VC50 tcl 2272 GDDR GDDR2 GDDR3 GDDR4 GDDR5 K4D263238K gddr5 samsung K4D263238KVC40 K4D263238KVC50
    Text: 128M GDDR SDRAM K4D263238K 128Mbit GDDR SDRAM Revision 1.1 July 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4D263238K 128Mbit 875ns 06Gbps) samsung GDDR5 K4D263238K-VC40 GDDR5 application note samsung K4D263238K-VC50 tcl 2272 GDDR GDDR2 GDDR3 GDDR4 GDDR5 K4D263238K gddr5 samsung K4D263238KVC40 K4D263238KVC50

    K4J52324QC

    Abstract: K4J52324QC-bj11
    Text: 512M GDDR3 SDRAM K4J52324QC 512Mbit GDDR3 SDRAM Revision 1.5 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K4J52324QC 512Mbit r7/08/13 450KB K4J52324QC-AC200 K4J52324QC-BC140 K4J52324QC-BC200 K4J52324QC-BJ110 K4J52324QC-BJ120 K4J52324QC-BJ1A0 K4J52324QC K4J52324QC-bj11

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    NPCE781BA0DX

    Abstract: NPCE781 NPCE781B DML D01 RT8209E RT8223BGQW RT8209EGQW-GP BCM57780 RT8209EGQW APX9132H
    Text: 5 4 3 2 Project code: 91.4HD01.001 PCB P/N : 48.4GX01.0SA PCB 版版 : 09919 SA REVISION : PCB STACKUP SYSTEM JV42-DN Block Diagram DDR3 800/1066/1333MHz CRT AMD Champlain CPU S1G4 45W D 16,17 DDR3 20 TOP LCD VCC 4,5,6,7 HDMI S IN OUT AMD RS880M CPU I/F


    Original     		PDF JV42-DN 800/1066/1333MHz 638-Pin uFCPGA638 4HD01 4GX01 RT8223 800/1066/1333MHz RT8209E 16X16 NPCE781BA0DX NPCE781 NPCE781B DML D01 RT8209E RT8223BGQW RT8209EGQW-GP BCM57780 RT8209EGQW APX9132H

    28Gbps

    Abstract: POD18 t25n
    Text: HY5FS123235AFCP 512M 16Mx32 GDDR4 SDRAM HY5FS123235AFCP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsability for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5FS123235AFCP 16Mx32) 28Gbps POD18 t25n

    POD18

    Abstract: SAMSUNG GDDR4 GDDR4
    Text: HY5FS123235AFCP 512M 16Mx32 GDDR4 SDRAM HY5FS123235AFCP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsability for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5FS123235AFCP 16Mx32) POD18 SAMSUNG GDDR4 GDDR4

    winbond wpce773la0dg

    Abstract: VT1702S G1454R41U ICS9LPRS480BKLFT SCD1U25V3KX-GP MMBT3904-4-GP c5696 WPCE773LA0DG 1gp transistor winbond 25x16
    Text: 5 4 3 2 SJM50-PU Block Diagram 1 SYSTEM DC/DC Project code: 91.4FC01.001 PCB P/N : 48.4FC01.0SB REVISION : 08256-SB 40 TPS51125 INPUTS OUTPUTS 5V_S5 8A 3D3V_S5(6A) 5V_AUX_S5 DCBATOUT D AMD Giffin CPU S1G2 (35W) Thermal Sensor CLK GEN. SMSC 31 Video RAM 4,5,6,7


    Original     		PDF SJM50-PU 4FC01 08256-SB TPS51125 TPS51124 EMC2103 ICS9LPRS480BKLFT 638-Pin uFCPGA638 winbond wpce773la0dg VT1702S G1454R41U ICS9LPRS480BKLFT SCD1U25V3KX-GP MMBT3904-4-GP c5696 WPCE773LA0DG 1gp transistor winbond 25x16

    G9731

    Abstract: APW7141 BCM5784 RT8205A JV71 WPC773 jv-71 RT9025-25PSP WISTRON power sequence FDS8884
    Text: 5 4 3 2 Project code: 91.4FP01.001 PCB P/N : 48.4FP02.0SB REVISION : 09243-SB JV71-TR Block Diagram DDR2 PCB STACKUP 667/800MHz AMD Caspian CPU S1G3 35W 667/800 MHz 16,17 D 1 DDR2 667/800 MHz 16,17 G792 34 IN OUT INPUTS HDMI VDDR3 21 DCBATOUT 1D2V_S0(4A)


    Original     		PDF JV71-TR 4FP01 4FP02 09243-SB 667/800MHz RT8205A 638-Pin uFCPGA638 TPS51124 G9731 APW7141 BCM5784 RT8205A JV71 WPC773 jv-71 RT9025-25PSP WISTRON power sequence FDS8884

    BCM5784

    Abstract: JV50-TR RT8205A RS880 SCD1U16V2KX-3GP SB710 AMD SB710 tps51125 RS880M ICS9LPRS480BKL
    Text: 5 4 3 2 Project code: 91.4FN01.001 PCB P/N : 48.4FN01.001 REVISION : 09230- -1 JV50-TR Block Diagram DDR2 PCB STACKUP 667/800MHz AMD Caspian CPU S1G3 35W 667/800 MHz 16,17 D 1 DDR2 667/800 MHz 16,17 G792 35 IN OUT INPUTS HDMI LAN DY Codec A-Link 4X4 AZALIA


    Original     		PDF JV50-TR 4FN01 667/800MHz RT8205A 638-Pin uFCPGA638 TPS51124 16X16 BCM5784 RT8205A RS880 SCD1U16V2KX-3GP SB710 AMD SB710 tps51125 RS880M ICS9LPRS480BKL

    TP2801

    Abstract: slg8sp513v diode tp806 RTM875N-606-VD-GR C5855 rtm875n-606 RTL8103 92HD81B1X5 ST330U2D5VDM-13GP 1SMB22AT3G-GP-U
    Text: 5 4 3 2 1 D D Alba Discrete ATI M92-LP gDDR2 Schematics uFCPGA Mobile Penryn Intel Cantiga-PM + ICH9M C C 2009-03-23 REV : SA B B DY : Nopop Component GM : Pop when Cantiga is GM PM : Pop when Cantiga is PM G/P : BOM control if Cantiga is PM A A <Core Design>


    Original     		PDF M92-LP ISL6266A SLG8SP513VTRove R2218 R2220 C3005. R4108. PD3107 1SMB22AT3G. PC3208, TP2801 slg8sp513v diode tp806 RTM875N-606-VD-GR C5855 rtm875n-606 RTL8103 92HD81B1X5 ST330U2D5VDM-13GP 1SMB22AT3G-GP-U

    IT8301E

    Abstract: IT8301 12073A EMC4001 L4910 C616A C536 PSE IT8512E Si4914B WISTRON power sequence
    Text: A 1 B C D E Model Name : Diaz Discrete Project Code : 91.4AR01.001 Revision : 08218-1 1 2 2 Diaz Discrete VGA ATI M82-S Schematics Document uFCPGA Mobile Merom Intel Crestline-PM + ICH8M 3 3 REV : A00 4 4 DZ1VQAT Wistron Corporation 5 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih,


    Original     		PDF 4AR01 M82-S R5401 R4303 R4029 R4030 C6925 100pF IT8301E IT8301 12073A EMC4001 L4910 C616A C536 PSE IT8512E Si4914B WISTRON power sequence