2N2007E
Abstract: 2N2007 CAP 10nF 50V 0603 18126D107MAT 597D108X06
Text: MIC5162 Dual Regulator Controller for DDR3 GDDR3/4/5 Memory and High-Speed Bus Termination General Description Features The MIC5162 is a dual regulator controller designed for highspeed bus termination. It offers a simple, low-cost JEDEC compliant solution for terminating high-speed, lowvoltage digital buses i.e. DDR, DD2, DDR3, SCSI, GTL,
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MIC5162
MIC5162
M9999-061509
2N2007E
2N2007
CAP 10nF 50V 0603
18126D107MAT
597D108X06
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hyb18h1g321af-11
Abstract: qimonda hyb18h
Text: June 2007 HYB18H 1G 321 A F- 1 1 / 1 4 GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM RoHS compliant Data S heet Rev. 0.80 Data Sheet HYB18H1G321AF-11/14 1-Gbit GDDR3 HYB18H1G321AF-11/14 Preliminary Revision History: 2007-06, Rev. 0.80 Page Subjects major changes since last revision
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HYB18H
HYB18H1G321AF-11/14
hyb18h1g321af-11
qimonda hyb18h
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HYB18H512321B2F-14
Abstract: No abstract text available
Text: March 2008 HYB18H512321B2F–12/14 GDDR3 Graphics RAM 512-Mbit GDDR3 Graphics RAM RoHS compliant Advance Internet Data Sheet Rev. 0.70 Advance Internet Data Sheet HYB18H512321B2F 512-Mbit GDDR3 HYB18H512321B2F–12/14 Revision History: 2008-03, Rev. 0.70 Page
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HYB18H512321B2F
512-Mbit
HYB18H512321B2F-14
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W641GG2KB
Abstract: gddr3 schematic WBGA-136 W641GG2
Text: W641GG2KB 1-Gbit GDDR3 Graphics SDRAM Table of Contents 1. GENERAL DESCRIPTION . 6 2. FEATURES . 7
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W641GG2KB
A01-001
W641GG2KB
gddr3 schematic
WBGA-136
W641GG2
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DDR3 pcb layout guidelines
Abstract: MIC5162YMM DDR3 pcb layout CRCW06031K00FKTA C1608X5R0J106M C2012X5R0J226M GRM188R60J106ME47D GRM21BR60J226ME39L MIC5162 MSOP-10
Text: MIC5162 Dual Regulator Controller for DDR3 GDDR3/4/5 Memory and High-Speed Bus Termination General Description Features The MIC5162 is a dual regulator controller designed for • Input voltage range: 1.35V to 6V high speed bus termination. It offers a simple, low-cost
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MIC5162
MIC5162
M9999-033110
DDR3 pcb layout guidelines
MIC5162YMM
DDR3 pcb layout
CRCW06031K00FKTA
C1608X5R0J106M
C2012X5R0J226M
GRM188R60J106ME47D
GRM21BR60J226ME39L
MSOP-10
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qimonda hyb18h5
Abstract: HYB18H512321BF HYB18H512321BF-10 HYB18H512321BF-08/10 gddr3 HYB18H512
Text: September 2007 HYB18H512321BF–11/12/14 HYB18H512321BF–08/10 512-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM RoHS compliant Internet Data Sheet Rev. 1.1 Internet Data Sheet HYB18H512321BF 512-Mbit GDDR3 HYB18H512321BF–11/12/14 HYB18H512321BF–08/10 Revision History: 2007-09, Rev. 1.1
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HYB18H512321BF
512-Mbit
HYB18H512321BF
qimonda hyb18h5
HYB18H512321BF-10
HYB18H512321BF-08/10
gddr3
HYB18H512
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HYB18H1G321AF-10/11/14
Abstract: HYB18H1G321AF CL11 SEN 1327 hyb18h1g321af-11 Qimonda AG HYB18H1G321AF A 1837 3G3M
Text: October 2007 HYB18H1G321AF–10/11/14 GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM RoHS compliant Internet Data Sheet Rev. 0.92 Internet Data Sheet HYB18H1G321AF–10/11/14 1-Gbit GDDR3 HYB18H1G321AF–10/11/14 Revision History: 2007-10, Rev. 0.92 Page Subjects major changes since last revision
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HYB18H1G321AF
HYB18H1G321AF-10/11/14
CL11
SEN 1327
hyb18h1g321af-11
Qimonda AG HYB18H1G321AF
A 1837
3G3M
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POWER COMMAND HM 1211
Abstract: power generation POWER COMMAND HM 1211 6331-1 gddr3 schematic HYB18T256324F-20 infineon sgram
Text: Data Sheet, Rev. 1.11, April 2005 HYB18T256324F–16 HYB18T256324F–20 HYB18T256324F–22 256-Mbit GDDR3 DRAM [600MHz] RoHS compliant Memory Products N e v e r s t o p t h i n k i n g . Edition 04-2005 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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HYB18T256324F
256-Mbit
600MHz]
JESD-51
10292004-DOXT-FS0U
POWER COMMAND HM 1211
power generation POWER COMMAND HM 1211
6331-1
gddr3 schematic
HYB18T256324F-20
infineon sgram
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E4690
Abstract: No abstract text available
Text: cPCI-R6700 Series 6U CompactPCI Rear Transition Module with ATI/AMD Radeon E4690 GPU 1 AdvancedTCA Features ATI/AMD Radeon™ E4690 embedded GPU 512MB on-chip GDDR3 VRAM Supports dual independent DVI-I displays Onboard VBIOS update available PICMG 2.16 Packet Switch Backplane R1.0
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cPCI-R6700
E4690
512MB
cPCI-R6700
cPCI-R6700D
cPCI-R6700D
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Untitled
Abstract: No abstract text available
Text: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.2 March 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J55323QG
256Mbit
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K4J10324KE-HC1A
Abstract: K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12
Text: Target 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 0.1 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J10324KE
136FBGA
10tCK
10MAX
K4J10324KE-HC1A
K4J10324KE-HC14
T21N
K4J10324KE
k4j10324
K4J10324KE-HC12
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DDR3 pcb layout guidelines
Abstract: DDR3 pcb layout ddr3 termination 10x10.2 C1608X5R0J106M C2012X5R0J226M GRM188R60J106ME47D GRM21BR60J226ME39L MSOP-10 ddr3 layout
Text: MIC5165 Dual Regulator Controller for DDR3 GDDR3/4/5 Memory Termination General Description Features The MIC5165 is a dual regulator controller designed • Input voltage range: 0.75V to 6V specifically for low-voltage memory termination • Up to 7A VTT Current
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MIC5165
MIC5165
M9999-061510-B
DDR3 pcb layout guidelines
DDR3 pcb layout
ddr3 termination
10x10.2
C1608X5R0J106M
C2012X5R0J226M
GRM188R60J106ME47D
GRM21BR60J226ME39L
MSOP-10
ddr3 layout
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TCJB107M006R0070
Abstract: C1608X5R0J106M C2012X5R0J226M GRM188R60J106ME47D GRM21BR60J226ME39L MSOP-10 Mosfet selection 08056D226
Text: MIC5164 Dual Regulator Controller for DDR3 GDDR3/4/5 Memory and High-Speed Bus Termination General Description Features The MIC5164 is a dual regulator controller designed for high speed bus termination. It offers a simple, low-cost JEDEC-compliant solution for terminating high-speed, lowvoltage digital buses i.e. DDR, DDR2, DDR3, SCSI, GTL,
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MIC5164
MIC5164
M9999-061510
TCJB107M006R0070
C1608X5R0J106M
C2012X5R0J226M
GRM188R60J106ME47D
GRM21BR60J226ME39L
MSOP-10
Mosfet selection
08056D226
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TAIMAG HD 081 A
Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627
Text: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 *2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 *2
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MEROM/965-PM/ICH8-M/NB8P-GS
CK505)
ICS9LPR363CGLF-T
965PM
667MHz
RTL8111B
ISL6227
FDS2501
TPS51116
MAX1844
TAIMAG HD 081 A
ce-0702
TAIMAG HA 003
1C-8100
ALC660
CE-0703
0845a
asus
sw3205
R3627
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RFU20
Abstract: G72M sc413 BLM18PG181SN1D nvidia g72m 7SH02 nvidia MXM MXM CONNECTOR G72M-V quanta computer
Text: 5 4 D 3 2 CH-A NVIDIA PCI-E x16 CH-B FCBGA 820pin MXM CONNECTOR D VRAM GDDR3 8Mx32 16Mx32 Page8 Channel C is available on G73M only CRT C VRAM GDDR3 8Mx32 16Mx32 Page7 G72M G73M TV 1 C LVDS Page3 ~ 6 2.5V B B 3.3V Page2 VIN VCORE VRM VCORE 1.8V VRM 1.8V Page9
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8Mx32
16Mx32
820pin
NONPHY-X16
FG-13X91-20-230P
H-C236D118P2
RFU20
G72M
sc413
BLM18PG181SN1D
nvidia g72m
7SH02
nvidia MXM
MXM CONNECTOR
G72M-V
quanta computer
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TAIMAG HA 003
Abstract: sanyo sf hd60 hall sensor b61 wpc8763ldg sc sf battery fuse 12a h3 sc sf Agere Delphi AM3 Sil3531 WPC8763L foxconn g41
Text: A B C D Godzilla Block Diagram Intel CPU Merom CRT 17 4 Thermal G791 22 LCD 14 sil1392 15 CRT 3 G-DDR3 55~58 256/512MB GDDR3 3 Crestline AGTL+ CPU I/F DDRII 667 Channel A DDR Memory I/F nVidia NB8E-GT G71M INTEGRATED GRAHPICS PCI-E *16 DDR II 667 Channel B
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800/667MHz
4V601
MAX8770
TPS51120
ICS9LPRS365YGLFT
HDMI16
sil1392
TPS51124
8111C
TAIMAG HA 003
sanyo sf hd60
hall sensor b61
wpc8763ldg
sc sf battery fuse
12a h3 sc sf
Agere Delphi AM3
Sil3531
WPC8763L
foxconn g41
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KB3910SF
Abstract: MAX8736ETL Planar Transformer v2.1 1D05V max8736b SC10U10V5ZY-1GP wistron PACDN009MR-GP-U C3782 foxconn
Text: 5 4 3 2 1 KAI Block Diagram TPS51120 Project code : 91.4F601.001 PCB P/N : 05233 Revision : SA Intel CPU CLK GEN D SYSTEM DC/DC INPUTS 5V_S5 DCBATOUT 3V_S5 D Yonah/Merom ICS954305 4,5 GDDR3 32MB 3 SYSTEM DC/DC 41 MAX8743 RGB CRT CRT 13 INPUTS Host BUS 533/667MHz
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TPS51120
ICS954305
4F601
MAX8743
533/667MHz
G72M-V
G3-64
MAX8725
100mA
R5C832
KB3910SF
MAX8736ETL
Planar Transformer v2.1
1D05V
max8736b
SC10U10V5ZY-1GP
wistron
PACDN009MR-GP-U
C3782
foxconn
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DDR2 x32
Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.
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K4J55323QF-GC
256Mbit
32Bit
K4J55323QF-G
DDR2 x32
GDDR3 SDRAM 256Mb
K4J55323QF-GC
K4J55323QF-GC12
K4J55323QF-GC14
MICRON gddr3
K4J55323QF-GC20
Gl WL02
Elpida GDDR3
T12N
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gddr3
Abstract: GDDR2
Text: Date : Oct , 2003 Revision 0.0 Application Application Note Note Key Difference Between GDDR2 and GDDR3 Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San24, Nongseo-Ree, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea(R.O.K)
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San24,
gddr3
GDDR2
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Untitled
Abstract: No abstract text available
Text: I n s p i r i n gg r e e np e r f o r ma n c ewi t h S a ms u n gDDR3Me mo r y Hi ghper f or mance,ener gyef f i ci entmemor y Sams ungSemi conduct orEur ope,2009 Dual -andmul t i cor eCPUsf ormul t i t aski ngoper at i ons,64bi toper at i ng syst emsandcomput
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Abstract: No abstract text available
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004
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HY5RS573225F
8Mx32)
240ohm
240ohms
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hy5rs123235b
Abstract: HY5RS123235BFP HY5RS123235
Text: HY5RS123235BFP 512Mbit 16Mx32 GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235BFP
512Mbit
16Mx32)
HY5RS123235BFP
hy5rs123235b
HY5RS123235
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HYB18T256324
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.11, April 2005 HYB18T256324FL22 HYB18T256324FL25 256-Mbit GDDR3 DRAM RoHS compliant Memory Products N e v e r s t o p t h i n k i n g . Edition 04-2005 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
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HYB18T256324FL22
HYB18T256324FL25
256-Mbit
technologyT256324FL
JESD-51
07162004-7DXX-SZMF
HYB18T256324
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HYB18H512321AF-14
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.30, Feb. 2005 HYB18H512321AF–14 HYB18H512321AF–16 HYB18H512321AF–20 512-Mbit GDDR3 Graphics RAM [700 MHz] Green Product Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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HYB18H512321AF
512-Mbit
HYB18H512321AF
JESD-51
05122004-B1L1-JEN8
HYB18H512321AF-14
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