Untitled
Abstract: No abstract text available
Text: User’s Manual V850E/ME2 32-Bit Single-Chip Microcontroller Hardware µPD703111A Document No. U16031EJ3V0UD00 3rd edition Date Published June 2004 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U16031EJ3V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
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V850E/ME2
32-Bit
PD703111A
U16031EJ3V0UD00
U16031EJ3V0UD
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48C20
Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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3608C
48C20
SA125
AT49BV640DT-70CU
AT49BV640D
AT49BV640DT
AT49BV640D-70CU
SWITCH SA125
278000 eprom
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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M15451E
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can
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PD29F064115-X
64M-BIT
16-BIT
PD29F064115-X
M15451E
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SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
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S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
SA6954
S29WS064N
S29WS128N
S29WS256N
WS128N
FFC00
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Untitled
Abstract: No abstract text available
Text: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)
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S29NS-R
S29NS01GR,
S29NS512R,
S29NS256R,
S29NS128R
S29NS512P
S29NS512R.
S29VS256R
S29VS128R
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740-0007
Abstract: EN29GL064 6A000
Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
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EN29GL064
8192K
4096K
16-bit)
740-0007
EN29GL064
6A000
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110R
Abstract: S29GL128N
Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this
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Am29LV6402M
S29GL128N
110R
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SA-275
Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document
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Am29PDL129H
S29PL129J
Am29PDL129J
SA-275
2aa 555
SA1127
SA1-108
SA1115
SA298
SA283
SA1117
PDL128G
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M420000000
Abstract: FSB073 3FE00
Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector
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Am42DL640AG
16-Bit)
73-Ball
5M-1994.
M420000000
FSB073
3FE00
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MBM29BS64LF
Abstract: MBM29BS64LF-18 MBM29BT64LF-18
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed
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DS05-20916-1E
MBM29BS/BT64LF-18/25
MBM29BS/BT64LF
60-ball
MBM29BS/
BT64LF-25
MBM29BT64LF-18
MBM29BS64LF-18
F0403
MBM29BS64LF
MBM29BS64LF-18
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BGA-101P-M01
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM
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DS05-50208-2E
MB84LD23381EJ-10
101-ball
BGA-101P-M01
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MX29LV640D
Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales
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MX29LV640D
MX29LV640E
MX29LV640E
PM1208
64M-BIT
A0-A21
Q0-Q15
MX29LV640DT
0001111XXX
MX29LV640DBTC-90G
1000010XXX
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FTA073
Abstract: No abstract text available
Text: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am50DL128BH
FTA073--73-Ball
FTA073
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AM29DL640H
Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am75PDL191BHHa/
Am75PDL193BHHa
Am75PDL191BHHa/Am75PDL193BHHa
AM29DL640H
FTE073
PDL127
PDL127H
PDL129
PDL129H
cef3
sa2111
AM29DL640
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A039h
Abstract: 3A400
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.
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16/4M
MBM29XL12DF
128M-bit,
90-pin
96-ball
A039h
3A400
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4kw marking
Abstract: No abstract text available
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0307
4kw marking
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Untitled
Abstract: No abstract text available
Text: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.
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Am29DL640D
16-Bit)
256od)
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29LV640MH/L 64 Megabit 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations
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Am29LV640MH/L
16-Bit/8
128-word/256-byte
8-word/16-byte
TS056
TSR056
0004h
0001h
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101R
Abstract: 120R LV065MU S29GL064A
Text: Am29LV641MH/L Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL064A supersedes Am29LV641M H/L and is the factory-recommended migration path. Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this
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Am29LV641MH/L
S29GL064A
Am29LV641M
101R
120R
LV065MU
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AT49BV6416
Abstract: AT49BV6416C AT49BV6416CT
Text: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout
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64-megabit
AT49BV6416
AT49BV6416C
AT49BV6416CT
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29LV641
Abstract: 29LV640D
Text: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards
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Am29LV640DU/Am29LV641
16-Bit)
48-pin
56-pin
Am29LV640DU/Am
29LV641
TSR048--
16-038-TS48
TSR048
29LV640D
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29lv641
Abstract: No abstract text available
Text: AMD£I ADVANCE INFORMATION Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations
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Am29LV640DU/Am29LV641
16-Bit)
48-pin
56-pin
Am29LV640DU/Am
29LV641
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