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    Tripp Lite SB1924096KG

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    DigiKey SB1924096KG Bulk 1
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    Hang Crystal International 1522H-4.096KWVDTSK

    2520 4.096MHz HCMOS 1.8-3.3V +/-
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    DigiKey 1522H-4.096KWVDTSK Reel 3,000
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    Abracon Corporation ASTMK-4.096KHZ-LQ-DCC-H-T

    MEMS OSC XO 4.0960KHZ LVCMOS SMD
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    ASTMK-4.096KHZ-LQ-DCC-H-T Cut Tape 1
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    Avnet Abacus ASTMK-4.096KHZ-LQ-DCC-H-T Reel 1,000
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    Abracon Corporation ASTMK-4.096KHZ-LQ-DCC-H-T3

    MEMS OSC XO 4.0960KHZ LVCMOS SMD
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    Abracon Corporation ASTMK-4.096KHZ-LQ-DCC-H-T10

    MEMS OSC XO 4.0960KHZ LVCMOS SMD
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    4096K Datasheets Context Search

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    DS1250

    Abstract: DS1250AB DS1250AB-100 DS1250AB-70 DS1250Y DS1250Y-100 DS1250Y-70 DS9034PC
    Text: DS1250Y/AB 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM,


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    PDF DS1250Y/AB 4096k DS1250Y) DS1250AB) 32-pin DS1250 DS1250AB DS1250AB-100 DS1250AB-70 DS1250Y DS1250Y-100 DS1250Y-70 DS9034PC

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


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    PDF EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000

    34-PIN

    Abstract: DS1248 DS1251YP DS9034PCX
    Text: DS1251/DS1251P 4096K NV SRAM with Phantom Clock www.dalsemi.com FEATURES PIN ASSIGNMENT Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years =512K x 8 NV SRAM directly replaces volatile static RAM or EEPROM


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    PDF DS1251/DS1251P 4096K DS1251P DS9034PCX 34-PIN DS1248 DS1251YP

    DS1250W-100

    Abstract: DS1250W-100IND DS1250WP-100 DS1250WP-100IND DS9034PC DS9034PCI DS1250 DS1250W
    Text: 19-5648; Rev 12/10 DS1250W 3.3V 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES • •         10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM,


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    PDF DS1250W 4096k 100ns 32-pin MDT32 DS1250W-100 DS1250W-100IND DS1250WP-100 DS1250WP-100IND DS9034PC DS9034PCI DS1250 DS1250W

    DS9034PC

    Abstract: DS1250 DS1250W DS1250W-100 DS1250W-100IND DS1250W-150 DS1250WP-100 DS1250WP-100IND
    Text: DS1250W 3.3V 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory


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    PDF DS1250W 4096k 100ns 32-pin DS9034PC DS1250 DS1250W DS1250W-100 DS1250W-100IND DS1250W-150 DS1250WP-100 DS1250WP-100IND

    P87/AD

    Abstract: No abstract text available
    Text: Ordering number : EN7972 LC875BP4A,LC875BM2A LC875BJ0A,LC875BH4A http://onsemi.com CMOS IC ROM 256K/224K/192K/176K byte, RAM 4096K byte on-chip 8-bit 1-chip Microcontroller Overview The LC875BP4A, LC875BM2A, LC875BJ0A, LC875BH4A is 8-bit single chip microcontroller with the following


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    PDF EN7972 LC875BP4A LC875BM2A LC875BJ0A LC875BH4A 256K/224K/192K/176K 4096K LC875BP4A, LC875BM2A, LC875BJ0A, P87/AD

    AK5324096W

    Abstract: No abstract text available
    Text: AK5324096W 4,194,304 Word by 32 Bit CMOS Dynamic Random Access Memory ACCUTEK MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK5324096W high density memory module is a CMOS Dynamic RAM organized in 4096K x 32 bit words. The module consists of eight standard 4 Meg x 4 DRAMs in plastic SOJ packages mounted on the front surface of a printed circuit board with a


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    PDF AK5324096W AK5324096W 4096K

    pm25lq032

    Abstract: PM25LQ032C-BCE
    Text: Pm25LQ032C 32Mbit Single Operating Voltage Serial Flash Memory With 104 MHz Dual- or 100MHz Quad-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Memory Organization - Pm25LQ032C: 4096K x 8 32 Mbit


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    PDF Pm25LQ032C 32Mbit 100MHz 208mil 16-pin 300mil -40oC 125oC 150mil pm25lq032 PM25LQ032C-BCE

    EN29GL064

    Abstract: cFeon cFeon EN
    Text: EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


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    PDF EN29GL064 8192K 4096K 16-bit) 8-word/16ombinations EN29GL064 48-pin 48-ball cFeon cFeon EN

    DS1350AB

    Abstract: DS1350AB-100 DS1350AB-70 DS1350Y DS1350Y-100 DS1350Y-70 DS9034PC
    Text: DS1350Y/AB 4096k Nonvolatile SRAM with Battery Monitor www.maxim-ic.com FEATURES § § § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Power supply monitor resets processor when


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    PDF DS1350Y/AB 4096k DS1350Y) DS1350AB DS1350AB-100 DS1350AB-70 DS1350Y DS1350Y-100 DS1350Y-70 DS9034PC

    DS1350AB

    Abstract: DS1350AB-70 DS1350Y DS1350Y-70 DS9034PC DS9034PCI
    Text: 19-5585; Rev 10/10 DS1350Y/AB 4096k Nonvolatile SRAM with Battery Monitor www.maxim-ic.com FEATURES • •           10 years minimum data retention in the absence of external power Data is automatically protected during power


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    PDF DS1350Y/AB 4096k DS1350Y) DS1350AB DS1350AB-70 DS1350Y DS1350Y-70 DS9034PC DS9034PCI

    32-PIN

    Abstract: 34-PIN DS1250 DS1250AB DS1250Y al229
    Text: D S 1250Y /A B DALLAS DS1250Y/AB 4096K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc • Data is automatically protected during power loss A15 A17 • Directly replaces 512K x 8 volatile static RAM


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    PDF DS1250Y/AB 4096K DS1250Y) DS1250AB) 32-pin DS1250Y/AB 34-PIN 68-pin DS1250 DS1250AB DS1250Y al229

    Untitled

    Abstract: No abstract text available
    Text: DS1350W PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1350W 3.3V 4096K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23 22 • Data is automatically protected during power loss


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    PDF DS1350W 4096K

    Untitled

    Abstract: No abstract text available
    Text: DS1350Y/AB PRELIMINARY DS1350Y/AB DALLAS SEMICONDUCTOR 4096K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 512K x 8 volatile static RAM or EEPROM


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    PDF DS1350Y/AB 4096K 34-PIN D1350Y/AB 68-pin 34P-SMT-3

    Untitled

    Abstract: No abstract text available
    Text: DS1350Y/AB DS1350Y/AB DALLAS SEMICONDUCTOR 4096K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23 22 • Data is autom atically protected during power loss


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    PDF DS1350Y/AB 4096K

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8C8512C Electronic Designs Inc. Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS 0.4" Wide DIP Module ; Features The ED18C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi­ layered, multi-cavity ceramic substrate. This high speed


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    PDF EDI8C8512C 512Kx8 ED18C8512C 4096K 128Kx8 EDI8C8512C

    Untitled

    Abstract: No abstract text available
    Text: DS1650Y/AB DALLAS SEMICONDUCTOR DS1650Y/AB Partitionable 4096K NV SRAM PIN ASSIGNMENT FEATURES •10 years minimum data retention in the absence of external power A 18 I| 1 32 1 A 16 I1 2 31 % A 14 11 3 3 0 1 A 17 A 12 I1 4 291 W E A 7 I1 5 2 8 1 A 13 A 6


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    PDF DS1650Y/AB 4096K 2bl4130 DS1650Y/AB 34-PIN 68-pin 34P-SMT-3 HIS-40001-04

    h13q

    Abstract: No abstract text available
    Text: D S 1 35 0Y /A B DS1350Y/AB DALLAS SEMICONDUCTOR 4096K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss H e *' • Power supply monitor resets processor when V c c


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    PDF DS1350Y/AB 4096K 2bl4130 h13q

    Untitled

    Abstract: No abstract text available
    Text: EDI8M16256C 35/45/55/70 Module The fu tu re . •■ A E>VAM C E OKIFOIF8MATDOM 256Kx16 SRAM CMOS, High Speed Module Features The EDI8M16256C is a 4096K 256Kx16bit High Speed Static RAM module constructed using sixteen EDI81256C (256Kx1) Static RAMs in ieadless chip


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    PDF EDI8M16256C 256Kx16 EDI8M16256C 4096K 256Kx16bit) EDI81256C 256Kx1) EDI816H64C 1024K

    Untitled

    Abstract: No abstract text available
    Text: DS1250W PRELIMINARY DALLAS SEMICONDUCTOR DS1250W 3.3V 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 1 0 years minimum data retention in the absence of external power A18 I | 1 • Data is autom atically protected during power loss 31 11 A15 A14 30 |1 A17


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    PDF DS1250W 4096K

    GG13S1

    Abstract: No abstract text available
    Text: D S 1251Y DALLAS DS1251Y 4096K NV SRAM with Phantom Clock SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years A18/RST l i • 512K x 8 NV SRAM directly replaces volatile static


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    PDF 1251Y DS1251Y 4096K A18/RST 2bl413Q D013524 32-PIN GG13S1

    Untitled

    Abstract: No abstract text available
    Text: DS1251Y DALLAS s e m ic o n d u c to r . DS1251Y 4096K NV SRAM with Phantom Clock FEATURES • Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years • 512K x 8 NV SRAM directly replaces volatile static


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    PDF DS1251Y 4096K 32-pin

    Untitled

    Abstract: No abstract text available
    Text: ^E D I EDI8M8256C/LP/P Electronic Designs Inc. Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8256C/LP/P is a 4096K bit CMOS Static RAM based on eight 32Kx8 Static RAMs mounted on a 256Kx8 bit CMOS Static Random Access Memory multi-layered ceramic substrate.


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    PDF EDI8M8256C/LP/P 256Kx8 EDI8M8256C/LP/P 4096K 32Kx8 the32Kx8 85-150ns

    DS1650

    Abstract: DS1650AB DS1650Y DS1650Y-70 DS1650Y-100
    Text: DS1650Y/AB DALLAS SEMICONDUCTOR Partitionable 4096K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 512K x 8 volatile static RAM


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    PDF ds1650y/ab 4096K DS1650Y) DS1650AB) 32-pin 32-pln 34-pln 32-pln 34-pln DS1650 DS1650AB DS1650Y DS1650Y-70 DS1650Y-100