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    S9G67A Search Results

    S9G67A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S9G67A Toshiba FET, Microwave Power GaAs FET Transistor, ID 3.5 A Scan PDF
    S9G67A Toshiba MICROWAVE POWER GaAs FET Scan PDF

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    S9G67A

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET Non-Matched MICROWAVE SEMICONDUCTOR TECHNICAL DATA S9G67A Preliminary 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent


    OCR Scan     		PDF S9G67A S9G67A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROW AVE POW ER G a A s F E T N on -M atch ed MICROWAVE SEMICONDUCTOR S9G67A Preliminary TECHNICAL DATA 1. R F P E R FO R M A N C E SP E C IF IC A T IO N S CH A RA CTERISTICS SYM BOL Output Power at ldB Com pression Point PldB Power G ain at ldB


    OCR Scan     		PDF S9G67A

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA M I C R O WA V E P O W E R GaAs FET MICROWAVE SEMICONDUCTOR S9G67A T E C H N IC A L D A T A FEATURES : • HIGH ■NON-MATCHED POWER P1dB=35.5dBm ■ HIGH at 2. 7GHz ■HERMETICALLY GAIN G1dB=1OdB TYPE at SEALED PACKAGE 2 . 7 GHz RF PERFORMANCE SPECIFICATIONS


    OCR Scan     		PDF S9G67A