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    S4711 Search Results

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    S4711 Price and Stock

    Vishay Semiconductors TFBS4711-TR3

    TXRX IRDA 115.2 KBIT/S - 6-SMD 1
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    DigiKey TFBS4711-TR3 Cut Tape 6,739 1
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    TFBS4711-TR3 Digi-Reel 6,739 1
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    TFBS4711-TR3 Reel 5,000 2,500
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    Vishay Semiconductors TFBS4711-TR1

    TXRX IRDA 115.2 KBIT/S - 6-SMD 1
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    DigiKey TFBS4711-TR1 Reel 2,000 1,000
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    Vishay Semiconductors TZS4711-GS08

    DIODE ZENER 27V 500MW SOD80
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    DigiKey TZS4711-GS08 Reel 12,500
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    Vishay Semiconductors TFBS4711-TT1

    TXRX IRDA 115.2KBIT 1.9MM 6-SMD
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    DigiKey TFBS4711-TT1 Reel 1,000
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    TFBS4711-TT1 Cut Tape 1
    • 1 $5.69
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    • 1000 $2.189
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    TFBS4711-TT1 Digi-Reel 1
    • 1 $5.69
    • 10 $3.733
    • 100 $2.6463
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    Sensata Circuit Breakers LEGBX66-1RS4-71160-1-V

    CIR BRKR,HYDMAG
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    DigiKey LEGBX66-1RS4-71160-1-V Bulk 3
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    Master Electronics LEGBX66-1RS4-71160-1-V
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    • 10 $108.99
    • 100 $58.16
    • 1000 $52.23
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    Find more S4711 price and stock on Findchips.com

    S4711 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si6433DQ

    Abstract: No abstract text available
    Text: Si6433DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.06 @ VGS = –4.5 V "4.0 0.09 @ VGS = –2.5 V "3.0 S* TSSOP-8 D S S G 1 2 D 8 7 Si6433DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		Si6433DQ S-47118--Rev. 22-Apr-96 PDF

    70530

    Abstract: Si6433DQ
    Text: Si6433DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.06 @ VGS = –4.5 V "4.0 0.09 @ VGS = –2.5 V "3.0 S* TSSOP-8 D S S G 1 2 D 8 7 Si6433DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		Si6433DQ S-47118--Rev. 22-Apr-96 70530 PDF

    din 41332

    Abstract: s4703 iec 384-4 ll 0007C si4ph X6936 monoethylenglykol S4710 GWA33240090096 Heatsink For stud devices - Semikron
    Text: Index Selection guide Type Application Page A axial leaded 10 G high currents 15 GM high currents / small dimensions 23 GH high currents long - life type 30 GW highest currents 36 GS Design DIN terminals 40 LF high currents with soldering - lugs 45 MDK motor starting


    Original     		\EMAIN16 din 41332 s4703 iec 384-4 ll 0007C si4ph X6936 monoethylenglykol S4710 GWA33240090096 Heatsink For stud devices - Semikron PDF

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S D S4711-2.3 ITS08F06 POWERLINE N-CHANNEL IGBT The ITS08F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		S4711-2 ITS08F06 ITS08F06 PDF

    S4711

    Abstract: s4-711
    Text: Tem ic SÌ6433DQ S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Product Summary V d s V 12 rDS(on) ( ^ ) I d (A) 0.06 @ Vqs = -4-5 V ±4.0 0.09 @ VGS = -2.5 V ±3.0 TSSOP-8 ♦Source Pins 2, 3, 6 and 7 must be tied common. n Top View P-Channel M OSFET


    OCR Scan     		6433DQ S-47118--Rev. 22-Apr-96 S4711 s4-711 PDF

    T0252

    Abstract: SMD making code 2f ITS08F06 ITS08F06B ITS08F06G ITS08F06H
    Text: ITS08F06 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R Advance Information S upersedes February 1998 version, S4711 -2 .4 The ITS08F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		ITS08F06 DS4711 DS4711-3 ITS08F06 T0252 SMD making code 2f ITS08F06B ITS08F06G ITS08F06H PDF