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    S1423 Search Results

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    S1423 Price and Stock

    Littelfuse Inc TS1423

    RELAY TIME DELAY 180SEC CHAS MT
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    DigiKey TS1423 Bulk 10
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    Mouser Electronics TS1423
    • 1 $59.86
    • 10 $55.61
    • 100 $50.71
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    Newark TS1423 Bulk 10
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    • 10 $46.65
    • 100 $39.94
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    TTI TS1423 Bulk 10
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    • 10 $49.46
    • 100 $46.61
    • 1000 $45.69
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    Ozdisan Elektronik TS1423
    • 1 $99.4714
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    Century Spring Corp S-1423CS

    COMPRESSION STEEL 0.625" 1.130"
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    DigiKey S-1423CS Box 1
    • 1 $8.23
    • 10 $8.23
    • 100 $4.5984
    • 1000 $3.63038
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    ITW Lumex LPF-S142331S

    LIGHT PIPE
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    IndustrialeMart BC-AGS-142309

    BOX ABS LGT GRY 9.06"L X 5.51"W
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    DigiKey BC-AGS-142309 Bulk 1
    • 1 $18.65
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    IndustrialeMart BC-ATS-142309

    BOX ABS CLEAR 9.06"L X 5.51"W
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    DigiKey BC-ATS-142309 Bulk 1
    • 1 $22.75
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    S1423 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S1423 Unknown Silicon PNP Transistor Scan PDF
    S1423 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    S1423 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    S1423 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    S1423 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    S1423 Unknown Cross Reference Datasheet Scan PDF
    S1423156024 Carlo Gavazzi Photoelectric Amplifiers (Adjustable sensitivity) Original PDF
    S1423156115 Carlo Gavazzi Photoelectric Amplifiers (Adjustable sensitivity) Original PDF
    S1423156230 Carlo Gavazzi Photoelectric Amplifiers (Adjustable sensitivity) Original PDF
    S1423156724 Carlo Gavazzi Photoelectric Amplifiers (Adjustable sensitivity) Original PDF

    S1423 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    photoelectrics amplifier

    Abstract: s411 S1423 LIGHT ACTIVATED SWITCH CIRCUIT DIAGRAM 6 volt relay pin out diagram s 1423 156 724 MARKING BB1 S111 S111A S142
    Text: Photoelectrics Amplifier Type S1423 • Amplifier relay for photoelectric switches • Multiplex system, master/slave 20 ms cycle • Sensitivity range DIP-switch selectable • Sensitivity adjustment by potmeter • Dirt accumulation and alignment control


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    PDF S1423 S111A, ZPD11 photoelectrics amplifier s411 S1423 LIGHT ACTIVATED SWITCH CIRCUIT DIAGRAM 6 volt relay pin out diagram s 1423 156 724 MARKING BB1 S111 S111A S142

    PTI 30 040 pa

    Abstract: t04 68 3 pin diode sg ag20 LP1 K06 1LPN3 AC03 nec ae02 marking HT15 22 marking ag01 TWN AA 427
    Text: User’s Manual µPD98412 NEASCOT-X15 Advanced ATM Switch LSI Document No. S14169EJ2V0UMJ1 (2nd edition) Date Published October 2000 N CP(K) Printed in Japan 1999 [MEMO] 2 User’s Manual S14169EJ2V0UM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


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    PDF PD98412 NEASCOT-X15TM) S14169EJ2V0UMJ1 S14169EJ2V0UM00 electri88-6130 PTI 30 040 pa t04 68 3 pin diode sg ag20 LP1 K06 1LPN3 AC03 nec ae02 marking HT15 22 marking ag01 TWN AA 427

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3127DV www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the


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    PDF Si3127DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: DG9421, DG9422 www.vishay.com Vishay Siliconix Precision Low-Voltage, Low-Glitch CMOS Analog Switches DESCRIPTION FEATURES Using BiCMOS wafer fabrication technology allows the DG9421, DG9422 to operate on single and dual supplies. • 2.7 V thru 12 V single supply or ± 2.7 V


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    PDF DG9421, DG9422 DG9422 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: DG508B, DG509B www.vishay.com Vishay Siliconix Precision 8-Channel / Dual 4-Channel CMOS Analog Multiplexers DESCRIPTION FEATURES The DG508B is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a 3-bit binary address


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    PDF DG508B, DG509B DG508B DG509B 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: DG2720 www.vishay.com Vishay Siliconix 2 Port, USB 2.0 High Speed 480 Mbps Switch, DPDT Analog Switch DESCRIPTION FEATURES The DG2720 is 2 Port high speed analog switch optimized for USB 2.0 signal switching. The DG2720 switch is configured in DPDT. It handles bidirectional signal flow,


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    PDF DG2720 DG2720 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQ4184EY www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


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    PDF SQ4184EY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF720, SiHF720 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 400 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 20 • Fast switching Qgs (nC) 3.3 • Ease of paralleling 11 • Simple drive requirements


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    PDF IRF720, SiHF720 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD320, SiHFD320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 400 RDS(on) (Ω) VGS = 10 V • Repetitive avalanche rated 1.8 20 Qgs (nC) 3.3 • End stackable Qgd (nC) 11 • Fast switching Configuration


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    PDF IRFD320, SiHFD320 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    MURATA GJM

    Abstract: Agilent RF amplifier QFN MURATA GRM
    Text: DATA SHEET SKY65040-360LF: 1.7-2.4 GHz Low Noise Amplifier Applications InterStage Match • Wireless infrastructure: GSM, CDMA, WCDMA, and TD-SCDMA • Ultra low-noise applications Features Figure 1. SKY65040-360LF Block Diagram • Ultra-low Noise Figure = 0.65 dB @ 1.95 GHz


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    PDF SKY65040-360LF: J-STD-020) SKY65040-360LF 201045B MURATA GJM Agilent RF amplifier QFN MURATA GRM

    HTA06

    Abstract: hta08 CBA07 HTD12 HTA12 ic 351 HTA09 CBD16 12-PHY HTA01
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF PD98412 NEASCOT-X15TM PD98412 S14169J HTA06 hta08 CBA07 HTD12 HTA12 ic 351 HTA09 CBD16 12-PHY HTA01

    Untitled

    Abstract: No abstract text available
    Text: Photoelectrics Amplifier Type S142C. • • • • • • • µ-Processor controlled Amplifier relay for photoelectric switches Automatic or manual emitter power regulation Multiplex system, master/slave 20 ms cycle Self-diagnostic functions Alignment help


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    PDF S142C. 11-pin ZPD11

    g30 nec 222

    Abstract: AK03 CBD46 HTA09 AG09 CBD21
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD98412 1.5G ATM SWITCH LSI DESCRIPTION The µPD98412 NEASCOT-X15 is an LSI integrating ATM switch functions on a single chip. It has UTOPIA Level2 interfaces and can switch 30 x 30 circuits by connecting multiple PHY devices. This LSI employs a shared


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    PDF PD98412 NEASCOT-X15) PD98412 S14169E g30 nec 222 AK03 CBD46 HTA09 AG09 CBD21

    2SA1005K

    Abstract: BC512 2N3644 2N5383 BC251 LOW-POWER SILICON PNP KT310 BC204B 2N601 2SA1005L
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 MPS3906 MPS3906 MPS3906 NS3906 NTM3906 NTM3906 PET3906 PXT3906 PXT3906 TP5383 YTS3906 2N3906 2N5383 2N5366 2N5366 2N5366 0402 0402 BFY64 2N5367 ~~':5U3~ 25 30 35 40 MPS6533M MMCM2907 MPS6534


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    PDF MPS3906 NS3906 NTM3906 PET3906 PXT3906 TP5383 2SA1005K BC512 2N3644 2N5383 BC251 LOW-POWER SILICON PNP KT310 BC204B 2N601 2SA1005L

    ag-07

    Abstract: hta08 HTA06 HTD12 HTD13 nec ac03 l05 cg ag02 AK07 AG07
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD98412 ADVANCED ATM SWITCH LSI DESCRIPTION The µPD98412 NEASCOT-X15 is an LSI integrating ATM switch functions on a single chip. It has UTOPIA Level2 interfaces and can switch 30 x 30 circuits by connecting multiple PHY devices. This LSI employs a shared


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    PDF PD98412 NEASCOT-X15) PD98412 S14169E ag-07 hta08 HTA06 HTD12 HTD13 nec ac03 l05 cg ag02 AK07 AG07

    PS-3PF-S4T1-PKL1

    Abstract: CT3528 HTD12 PS-10PF-D4T1-PKL1 NEC c157 lcd power board schematic APS 254 CBD49 htd11 CRML08W TEMSV
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF d88-6130 PS-3PF-S4T1-PKL1 CT3528 HTD12 PS-10PF-D4T1-PKL1 NEC c157 lcd power board schematic APS 254 CBD49 htd11 CRML08W TEMSV

    Untitled

    Abstract: No abstract text available
    Text: IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D DPAK (TO-252)


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    PDF IRFR320, IRFU320, SiHFR320 SiHFU320 O-252) O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    LP1 K06

    Abstract: AC03 nec marking ag01 TWN AA 427 epd driver ic epd source driver ic IC Marking M03 6 PIN
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF d88-6130 LP1 K06 AC03 nec marking ag01 TWN AA 427 epd driver ic epd source driver ic IC Marking M03 6 PIN

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT PART NUMBER REV. LPF-S142331S 14.57 [0.574] R0.50 [R0.02Q] 2.01 [0.079] 5 '07 ^0.200] J 3.05 [Q.12Q] D ETAIL C in OJ DETAIL A A r V GRDVE FDR P IP E BREAK AWAY a PLS, 3.18 [0.125] SQR. <2 PLS.) 25.99 [1.023] 10 RIBS DN THIS POST ONLY


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    PDF LPF-S142331S LPF--S142331S

    T112-16

    Abstract: Halbleiterbauelemente DDR Datenblattsammlung Tesla katalog tesla schaltkreise mikroelektronik datenblattsammlung VEB mikroelektronik mikroelektronik RFT mikroelektronik DDR rft katalog
    Text: Di vorliegenden Datenblätter dienen nur sur- Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente ©ingestuften Sortimente© Aus den Datenblättern können keine Liefer- oder ProduktVer­ bindlichkeiten abgeleitet werden*


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    PDF DDR-1035 T112-16 Halbleiterbauelemente DDR Datenblattsammlung Tesla katalog tesla schaltkreise mikroelektronik datenblattsammlung VEB mikroelektronik mikroelektronik RFT mikroelektronik DDR rft katalog

    TBC560

    Abstract: No abstract text available
    Text: > OVERSEA STANDARD < Typo No. Application NPN PNP . hFE v CE0 V >C PC (mA) (mW) VcE(sal)MAX. VCE (V) •c >c (mA) (mA) f-|-TYP (MIN.) ■b (mA) (MHZ) NF MAX. Vc e 'c (V) (mA) Pin Vc e ■c f Rg (dB) (V) (mA) (Hz) (K n ) —3 O to I ! I,CD Configuration ¡.<0


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    PDF TBC337 TBC327 TBC338 TBC328 TBC546 S1838 S1839 S1840 BF422 BF423 TBC560

    IMS1420M

    Abstract: 1AV Series
    Text: S1423M CMOS High Performance 4K x 4 Static RAM MIL-STD-883C FEATURES DESCRIPTION • INM O S1Very High Speed CM OS • Advanced Process - 1.6 Micron Design Rules • Specifications guaranteed over full military temperature range -55° C to + 125° C • 4K x 4 Bit Organization


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    PDF IMS1423M MIL-STD-883C 20-Pin IMS1420M IMS1423M MIL-STD-883C. IMS14ID 255Q- IMS1423S-35M IMS1420M 1AV Series

    Untitled

    Abstract: No abstract text available
    Text: B U R R -BR O W N IS0518 Bidirectional ISOLATED DIGITAL COUPLERS FEATURES DESCRIPTION • LOW POWER CONSUMPTION: < 12mW per Channel The IS0518 is an 8-channel, isolated, bidirectional digital coupler based on the Burr-Brown capacitive barrier technology. • 1500Vrms ISOLATION:


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    PDF IS0518 IS0518 1500Vrms 24-PIN IS0518.

    IMS1423

    Abstract: IMS1420M IMS1423S-35M CZ 553
    Text: S1423M CMOS High Performance 4K x 4 Static RAM MIL-STD-883C |Y |Q g * DESCRIPTION FEA TU R E S The IN M O S IM S 1423M is a high speed 4K x 4 C M O S static R AM processed in full com pliance to M ILSTD -883C . The IM S 1423M provides m axim um d ensity


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    PDF IMS1423M MIL-STD-883C 20-Pin IMS1420M MIL-STD-883C. IMS1423M IMS1423 IMS1420M IMS1423S-35M CZ 553