C67078-S1302-A2
Abstract: No abstract text available
Text: BUZ 20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 20 100 V 13.5 A 0.2 Ω TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Continuous drain current
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C67078-S1302-A2
C67078-S1302-A2
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C67078-S1302-A2
Abstract: BUZ20
Text: BUZ 20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 20 100 V 13.5 A 0.2 Ω TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1302-A2
C67078-S1302-A2
BUZ20
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Untitled
Abstract: No abstract text available
Text: Si7186DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 80 0.0125 at VGS = 10 V 32g a • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance www.vishay.com/doc?99912
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Si7186DP
Si7186DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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S13 SOT363
Abstract: marking code 8a
Text: SQ1905EL www.vishay.com Vishay Siliconix Automotive Dual P-Channel 1.8 V G-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () at VGS = - 4.5 V 0.6 RDS(on) () at VGS = - 2.5 V 0.932 RDS(on) () at VGS = - 1.8 V 2.27 ID (A) • TrenchFET Power MOSFET
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SQ1905EL
AEC-Q101
OT-363
SC-70
SC-70
SQ1905EL-Tl
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
S13 SOT363
marking code 8a
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62810
Abstract: No abstract text available
Text: SQJ910EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0110 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0120
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SQJ910EP
AEC-Q101
SQJ910EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
62810
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C10535E NEC IC PACKAGE MANUAL
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Abstract: No abstract text available
Text: SPICE Device Model SiS892ADN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiS892ADN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si6423DQ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si6423DQ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PD16855
Abstract: UP35
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PD16855A/B/C/D
PchMOSFET2100
PD16855BC
8DIP300
PD16855AG
8SOP225
PD16855BG
PD16855CG
PD16855
UP35
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sia449
Abstract: No abstract text available
Text: SPICE Device Model SiA449DJ www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiA449DJ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
sia449
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si5418DU www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si5418DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4848DY www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4848DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si5476DU www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si5476DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PD16855
Abstract: UP35
Text: データ・シート MOS集積回路 MOS Integrated Circuit µ PD16855A/B/C/D USB用デュアルPchハイサイドスイッチ 本製品はユニバーサル・シリアル・バス（USB）の電源バスに使用される過電流制限機能付きパワー・スイッチ
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PD16855A/B/C/D
PchMOSFET2100
PD16855BC
8DIP300
PD16855AG
8SOP225
PD16855BG
PD16855CG
PD16855
UP35
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD16855A/B/C/D DUAL HIGH-SIDE SWITCH FOR USB APPLICATION DESCRIPTION This product is the power switch IC with over current limit, used for the power supply bus of the Universal-SerialBus USB . 2 circuit builds in the Pch power MOSFET in the switch part, and this product realizes low on resistance (100 mΩ
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PD16855A/B/C/D
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si5471DC www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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Si5471DC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 20 Vbs 100 V *> ^DS on Package Ordering Code 13.5 A 0 .2 Q TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Continuous drain current Id 7b = 28 °C
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O-220
C67078-S1302-A2
O-220AB
GPT35155
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sharp mask rom
Abstract: No abstract text available
Text: MEMORIES Combination Memories ★ Under development • SRAM +Flash Memory Stacked TSOP Capacity SK configuration 1M SRAM X 4M FLASH X 8 8 LR-S13011 LR-S1302 1MSRAM X 8M FLASH X 8 8 1MSRAM X 16 8M FLASH vA 1O Block) 2M SRAM 1 1 1 1 1 8M FLASH 1 1 1 BM FLASH
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LR-S13011
LR-S1302
LR-S1304
LR-S1303
LR-S1313
LR-S1306
LR-S1305A
LR-S1307
56FBGA
72FBGA
sharp mask rom
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KDS 9E
Abstract: l0225 C67078-A1307-A3 KDS 7B KDS 1M ksd 202 transistor buz 36 KDS 7c C67078-S1302-A2 transistor buz 293
Text: V^ll~ IVIV^vJ D l 17 on £ m \J a ir ia i* T rD WVVCI M C IM O I9 1 V I UUC. 9 ini c n a n n e i • Enhancement mode VPT05381 Type VDS Id BUZ 20 100 V 13,5 A •^DS on 0,2 Q Package 1> Ordering Code TO-220 AB C67078-S1302-A2 M a v jm n m P a tjn g e Parameter
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O-220
C67078-S1302-A2
SIL03609
SILQ3610
SIL03611
SIL03612
KDS 9E
l0225
C67078-A1307-A3
KDS 7B
KDS 1M
ksd 202
transistor buz 36
KDS 7c
C67078-S1302-A2
transistor buz 293
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Untitled
Abstract: No abstract text available
Text: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^D S o n Package Ordering Code BUZ 20 100 V 13.5 A 0.2 n TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Values Symbol Continuous drain current Unit A b 13.5
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O-220
C67078-S1302-A2
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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ELAP CM 72
Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Text: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3
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dallas ds80c320 high speed micro guide
Abstract: transistor bf 175 DS1640
Text: TABLE OF CONTENTS Short-Form Catalog T im e kee pin g . 1 M emory P ro d u
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ISO 1302
Abstract: RAM 2112 256 word DS1202 DS1302 DS1302S DS1302Z
Text: DALLAS SEMICONDUCTOR S1302 Trickle Charge Timekeeping Chip PIN ASSIGNMENT FEATURES • Real time d o ck counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation VixæC 7 ^ 7 7 xi C 2 • 31 x 8 RAM for scratchpad data storage
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DS1302
DS1202
DS120
56-G4010-001
5bl4130
ISO 1302
RAM 2112 256 word
DS1302
DS1302S
DS1302Z
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B380
Abstract: No abstract text available
Text: S130/S130S TypJcol A pplication: J E f f i Electric G s m b Masioger 'S ÎS tïÊ : Mororized Toy T m If F iS NCHWüi fijr-ge ftttogs V V 1.5-3-0 3.Q 17D50 02S5 6300 Model S130-2270 A1 Mas. Ettiiiency If f * OÇHÜflÜrç Ç K A iH q J i t:s a ;j m » s
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S130/S130S
17D50
5130-227Eitkiency
5130-227Q
B380
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