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    SI5471DC Price and Stock

    Vishay Intertechnologies SI5471DC-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI5471DC-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI5471DC-T1-GE3 Reel 18 Weeks 3,000
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    Mouser Electronics SI5471DC-T1-GE3 69,924
    • 1 $0.49
    • 10 $0.483
    • 100 $0.373
    • 1000 $0.289
    • 10000 $0.237
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    Verical SI5471DC-T1-GE3 27,000 3,000
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    SI5471DC-T1-GE3 3,000 3,000
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    SI5471DC-T1-GE3 3,000 3,000
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    SI5471DC-T1-GE3 2,400 24
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    • 1000 $0.2551
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    Arrow Electronics SI5471DC-T1-GE3 27,000 18 Weeks 3,000
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    SI5471DC-T1-GE3 3,000 18 Weeks 3,000
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    • 10000 $0.2691
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    SI5471DC-T1-GE3 Cut Strips 2,400 18 Weeks 1
    • 1 $0.3019
    • 10 $0.2988
    • 100 $0.2741
    • 1000 $0.2551
    • 10000 $0.2551
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    Newark SI5471DC-T1-GE3 Cut Tape 1,939 1
    • 1 $0.662
    • 10 $0.585
    • 100 $0.442
    • 1000 $0.442
    • 10000 $0.442
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    SI5471DC-T1-GE3 Reel 3,000
    • 1 $0.335
    • 10 $0.335
    • 100 $0.335
    • 1000 $0.335
    • 10000 $0.303
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    TTI SI5471DC-T1-GE3 Reel 9,000 3,000
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    • 10000 $0.247
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    Avnet Asia SI5471DC-T1-GE3 23 Weeks 3,000
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    EBV Elektronik SI5471DC-T1-GE3 22 Weeks 3,000
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    Vishay Siliconix SI5471DC-T1-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    New Advantage Corporation SI5471DC-T1-GE3 3,000 1
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    SI5471DC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5471DC-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6A 1206-8 Original PDF

    SI5471DC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.020 at VGS = - 4.5 V -6 0.028 at VGS = - 2.5 V -6 0.062 at VGS = - 1.8 V -6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5471DC 2002/95/EC Si5471DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    65043

    Abstract: 9852 AN609
    Text: Si5471DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si5471DC AN609, 02-Jun-09 65043 9852 AN609

    Si5471DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		PDF Si5471DC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.020 at VGS = - 4.5 V -6 0.028 at VGS = - 2.5 V -6 0.062 at VGS = - 1.8 V -6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5471DC 2002/95/EC Si5471DC-T1-GE3 11-Mar-11

    DM 0365 R

    Abstract: DM 0365 SI5471DC-T1-GE3 1206-8 SI5471DC si5471
    Text: New Product Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.020 at VGS = - 4.5 V -6 0.028 at VGS = - 2.5 V -6 0.062 at VGS = - 1.8 V -6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5471DC 2002/95/EC Si5471DC-T1-GE3 18-Jul-08 DM 0365 R DM 0365 1206-8 SI5471DC si5471

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si5471DC www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		PDF Si5471DC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si5471

    Abstract: AN811 Si5471DC
    Text: New Product Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.020 at VGS = - 4.5 V -6 0.028 at VGS = - 2.5 V -6 0.062 at VGS = - 1.8 V -6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5471DC 2002/95/EC Si5471DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si5471 AN811

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.020 at VGS = - 4.5 V -6 0.028 at VGS = - 2.5 V -6 0.062 at VGS = - 1.8 V -6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si5471DC 2002/95/EC Si5471DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    SI4497

    Abstract: No abstract text available
    Text: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm


    Original     		PDF SC-75 VMN-PT0197-1006 SI4497