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    S10046 Price and Stock

    JRH Electronics 667-262-NF-S1004-6

    PROTECTIVE COVER
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    DigiKey 667-262-NF-S1004-6 Bulk 1
    • 1 $259.68
    • 10 $259.68
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    Glenair Inc 667-262-NF-S1004-6

    Protective Cover for 805 Series Mighty Mouse Triple-Start Connectors 10 Shell Size Receptacle - Bulk (Alt: 667-262-NF-S1004-6)
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    Avnet Americas 667-262-NF-S1004-6 Bulk 3 Weeks 1
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    Mouser Electronics 667-262-NF-S1004-6
    • 1 -
    • 10 $106.66
    • 100 $44.06
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    Newark 667-262-NF-S1004-6 Bulk 50 1
    • 1 $173.24
    • 10 $107.98
    • 100 $46.96
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    Interstate Connecting Components 667-262-NF-S1004-6
    • 1 $173.232
    • 10 $105.3395
    • 100 $105.3395
    • 1000 $105.3395
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    Vishay Intertechnologies GWS10046201KLX000

    Resistor Wirewound 6.2k Ohm 10% 80W 100ppm/K to 180ppm/K Loose Pack - Bulk (Alt: GWS10046201KLX000)
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    Avnet Americas GWS10046201KLX000 Bulk 8 Weeks 5
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    • 10 $36.2
    • 100 $21.1092
    • 1000 $21.1092
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    Vishay Intertechnologies GWS10046800KLX000

    Resistor Wirewound 680 Ohm 10% 80W 100ppm/K to 180ppm/K Loose Pack - Bulk (Alt: GWS10046800KLX000)
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    Avnet Americas GWS10046800KLX000 Bulk 8 Weeks 5
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    • 10 $36.2
    • 100 $21.1092
    • 1000 $21.1092
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    Vishay Intertechnologies GWS10046808JLX000

    Resistor Wirewound 6.8 Ohm 5% 80W 100ppm/K to 180ppm/K Loose Pack - Bulk (Alt: GWS10046808JLX000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GWS10046808JLX000 Bulk 8 Weeks 5
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    • 10 $47.475
    • 100 $44.66448
    • 1000 $44.66448
    • 10000 $44.66448
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    Find more S10046 price and stock on Findchips.com

    S10046 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si4804BDY 2002/95/EC Si4804BDY-T1-E3 Si4804BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SUD45P03-09-GE3

    Abstract: SUD45P03-09
    Text: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD45P03-09 2002/95/EC O-252 SUD45P03-09-GE3 18-Jul-08 SUD45P03-09-GE3 SUD45P03-09

    Untitled

    Abstract: No abstract text available
    Text: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD45P03-09 2002/95/EC O-252 SUD45P03-09-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD45P03-09 2002/95/EC O-252 SUD45P03-09-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S10011

    Abstract: S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115
    Text: S10000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground


    Original     		PDF S10000 MIL-PRF83446 MIL-STD-981, MIL-STD-202, S10011 S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115

    Si4712

    Abstract: Si4712DY
    Text: SPICE Device Model Si4712DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4712DY 18-Jul-08 Si4712

    si4574

    Abstract: No abstract text available
    Text: Si4574DY Vishay Siliconix N- and P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0175 at VGS = 10 V 10 0.020 at VGS = 4.5 V 9.2 0.021 at VGS = - 10 V - 9.2 0.028 at VGS = - 4.5 V - 7.4


    Original     		PDF Si4574DY 2002/95/EC Si4574DY-T1-GE3 18-Jul-08 si4574

    SiR880DP

    Abstract: v2410
    Text: SPICE Device Model SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR880DP 18-Jul-08 v2410

    Si4804BDY

    Abstract: Si4804BDY-T1-E3 Si4804BDY-T1-GE3
    Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si4804BDY 2002/95/EC Si4804BDY-T1-E3 Si4804BDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si4804BDY 2002/95/EC Si4804BDY-T1-E3 Si4804BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    1-EG05-AN6X-V1331

    Abstract: 1-EG05-AP6X-V1331 S4608540 S4608740
    Text: Housing Style 4 mm - Embeddable, Miniature Smooth, picofast Quick Disconnect Part Number Bi 1-EH04-AN6X-V1331 ID Number Features Sen s Ran ing ge m m Inductive Sensors Output 1 S4608540 3-Wire DC NPN Bi 1-EH04-AP6X-V1331 1 S4608440 3-Wire DC PNP Bi 1-EH04-Y1-V1330


    Original     		PDF 1-EH04-AN6X-V1331 S4608540 1-EH04-AP6X-V1331 S4608440 1-EH04-Y1-V1330 S1003044 1-EG05-AN6X-V1331 S4608740 1-EG05-AP6X-V1331 S4608640 1-EG05-AN6X-V1331 1-EG05-AP6X-V1331 S4608540 S4608740

    Untitled

    Abstract: No abstract text available
    Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si4804BDY 2002/95/EC Si4804BDY-T1-E3 Si4804BDY-T1-GE3 11-Mar-11

    Si4804BDY-T1-E3

    Abstract: Si4804BDY Si4804BDY-T1-GE3
    Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si4804BDY 2002/95/EC Si4804BDY-T1-E3 Si4804BDY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiJ420DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0026 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 20 Qg (Typ.) 28.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiJ420DP 2002/95/EC SiJ420DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Housing Style 6.5 mm - Embeddable, Miniature Smooth Barrel, Potted-In Cable 6.5 mm - Embeddable, Miniature Smooth Barrel, Potted-In Cable 6.5 mm - Embeddable, Miniature Smooth Barrel, Potted-In Cable Part Number ID Number Features Sen s Ran ing ge m m Inductive


    Original     		PDF S4610640 S4610100 S4610540 S4610000 S1004600 S4612100 S4612300 S4281170 S4612000 5-AP6X/S100

    SUD45P03-09-GE3

    Abstract: No abstract text available
    Text: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD45P03-09 2002/95/EC O-252 SUD45P03-09-GE3 11-Mar-11 SUD45P03-09-GE3

    Untitled

    Abstract: No abstract text available
    Text: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD45P03-09 2002/95/EC O-252 SUD45P03-09-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    137C1

    Abstract: No abstract text available
    Text: r r 7 ^ 7 # S G S -T H O M S O N IM D S i« ! » « ! ms4HCT137 M 7 4 H C T 1 37 3 TO 8 LINE DECODER/LATCH INVERTING • HIG HSPEED tpD = 17 ns (TYP.) AT Vcc = 5 V . LOW POWER DISSIPATION Ice = 4 fiA (MAX.) AT TA = 25 °C ■ COMPATIBLE WITH TTL OUTPUTS


    OCR Scan     		PDF ms4HCT137 54/74LS137 M54/74HCT137 137C1

    M74HCT13

    Abstract: No abstract text available
    Text: Æ T SCS-TNOM SON *7# RÂlOMtlILIlÊ'irmDgi M54HCT138 M74HCT138 3 TO 8 LINE DECODER • LOW POWER DISSIPATION IC C = 4 f*A MAX. at TA = 25°C ■ HIGH NOISE IMMUNITY V n ih = VNIL= 28% VCc (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ SYMMETRICAL OUTPUT IMPEDANCE


    OCR Scan     		PDF M54HCT138 M74HCT138 54/74LS138 M74HCT138 M54HCT138 M54/74HCT138 S-10046 M74HCT13