6116 CMOS RAM
Abstract: 6116 static RAM chip 71V428 IDT71V428 IDT71V428L IDT71V428S
Text: IDT71V428S IDT71V428L 3.3V CMOS Static RAM 4 Meg 1M x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns
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IDT71V428S
IDT71V428L
10/12/15ns
32-pin,
IDT71V428
304-bit
x4033
6116 CMOS RAM
6116 static RAM chip
71V428
IDT71V428L
IDT71V428S
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SO32-3
Abstract: IDT71024 IDT71024S70 S0323
Text: IDT71024S70 CMOS STATIC RAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 CMOS static RAM • Equal access and cycle times — Commercial: 70ns • Two Chip Selects plus one Output Enable pin • Bidirectional inputs and outputs directly TTL-compatible
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IDT71024S70
IDT71024
576-bit
200mV
300-mil
SO32-2)
400-mil
SO32-3)
SO32-3
IDT71024S70
S0323
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Untitled
Abstract: No abstract text available
Text: ADS61B23 w w w .t i.c om SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with
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ADS61B23
SLAS582
12-BIT,
80-MSPS
12-bit
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IDT71128
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71128 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times
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IDT71128
12/15/20ns
32-pin
IDT71128
576-bit
200mV
400-mil
SO32-3)
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ADS612X
Abstract: ADS61B23 ADS61B23IRHBT QFN-32 ADS61XX
Text: ADS61B23 www.ti.com SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with
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PDF
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ADS61B23
SLAS582
12-BIT,
80-MSPS
12-bit
ADS612X
ADS61B23
ADS61B23IRHBT
QFN-32
ADS61XX
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Honeywell M6531A1007
Abstract: honeywell M7535A1001 TP939B1002 honeywell ml7420a3006 T7412A1018 C7085A1006 MT4-230-NC T7460B1009 Delta Electronics dps 730 T7414A1019
Text: Field Devices A L L Y O U N E E D I N H VAC C ON TR OL INCLUDED Product Catalog 2013 Documentation on CD QR Codes Actuators 13 Valves linear 33 Valves rotary 86 Frequency inverters 99 Sensors 110 Thermostats 152 Pneumatic Products 162 Miscellaneous 174 Old products
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20/38mm
Honeywell M6531A1007
honeywell M7535A1001
TP939B1002
honeywell ml7420a3006
T7412A1018
C7085A1006
MT4-230-NC
T7460B1009
Delta Electronics dps 730
T7414A1019
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IDT71124
Abstract: 71124s12
Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times
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IDT71124
12/15/20ns
32-pin
IDT71124
576-bit
200mV
400-mil
SO32-3)
71124s12
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IDT71128
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71128 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinput (center power/GND) for reduced noise. • Equal access and cycle times
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Original
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PDF
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IDT71128
12/15/20ns
32-pin
IDT71128
576-bit
200mV
400-mil
SO32-3)
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Untitled
Abstract: No abstract text available
Text: ADS61B23 www.ti.com SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with
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Original
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PDF
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ADS61B23
SLAS582
12-BIT,
80-MSPS
12-bit
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS Static RAM 4 Meg 1M x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V428S IDT71V428L OBSOLETE PART Description 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns
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IDT71V428S
IDT71V428L
10/12/15ns
32-pin,
IDT71V428
304-bit
PDN-SR-0607.
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Untitled
Abstract: No abstract text available
Text: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for
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IDT71V124SA
10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124
576-bit
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT IDT71024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static R AM • Equal access and cycle times — Military: 1 5 /1 7 /2 0 /2 5 n s — Com m ercial: 1 2 /1 5 /1 7/20n s
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IDT71024
7/20n
MIL-STD-883,
L32-2)
300-mil
S032-2)
400-mil
S032-3)
4A25771
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s0324
Abstract: No abstract text available
Text: dt) 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT) REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for reduced noise.
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IDT71V124
12/15/20ns
Plastic32-pin
32-pin
IDT71V124
576-bit
71V124
400-mil
S032-3)
s0324
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y 4m
Abstract: 641BL
Text: CM O S STATIC RAM 1 MEG 128K x 8-BIT IDT71024 FEATURES: DESCRIPTION: • 128K x 8 a d v a n ce d h ig h -s p e e d C M O S s ta tic R AM T h e ID T 7 1 0 2 4 is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d sta tic R AM o rg a n iz e d a s 128K x 8. It is fa b ric a te d u sing ID T ’s highp e rfo rm a n c e , h ig h -re lia b ility C M O S te c h n o lo g y. T h is sta teo f-th e -a rt te c h n o lo g y , c o m b in e d w ith in n o va tive c irc u it d esign
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IDT71024
300-mil
400-m
MIL-STD-883,
L32-2)
y 4m
641BL
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CHN 920
Abstract: 71024S15 chn 830
Text: jdt CMOS STATIC RAM 1 MEG 128Kx 8-BIT) IDT71024 ïite g ia te d D ev ize T ech n o logy, ï i c . FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • Com m ercial (0° to 70°C), Industrial (-40° to 85°C) and M ilitary (-55° to 125°C) tem perature options
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128Kx
IDT71024
15/17/20/25ns
15/20ns
12/15/17/20ns
IL-STD-883,
T71024
576-bit
MS-027,
CHN 920
71024S15
chn 830
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS STATIC RAM 4 MEG 1Mx 4-BIT ADVANCE INFORMATION IDT71V428 Integrated Device Technology, inc. FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times
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OCR Scan
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PDF
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IDT71V428
12/15/20ns
32-pin,
IDT71V428
304-bit
drw02
71V428
400-mil
S032-3)
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S0323
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. VERY LOW POWER 3.3V CMOS FAST SRAM 1 MEG 128K x 8-BIT FEATURES: • 128K x 8 advanced high-speed CMOS Static RAM • Equal access and cycle times — Commercial: 20/25ns • True 3.3V design, not a re-characterized 5V device
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IDT713024SL
20/25ns
S0323
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71024 Integrated D evice T ech nology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • Equal access and cycle tim es — M ilitary: 20/25ns — C om m ercial: 15 /17ns
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128Kx
IDT71024
20/25ns
/17ns
32-pin
T71024
576-bit
400-m
D32-2)
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for
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OCR Scan
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PDF
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IDT71124
12/15/20ns
32-pin
IDT71124
576-bit
MO-061,
S5771
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S0323
Abstract: No abstract text available
Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times
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OCR Scan
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PDF
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9/10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124SA
IDT71V124
576-bit
200mV
71V124
300-mil
S0323
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S0323
Abstract: IDT71024S70 K 3568
Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT IDT71024S70 FEATURES: DESCRIPTION: • 1 2 8 K x 8 CM O S static RAM • Equal access and cycle times — Commercial: 70ns • Two Chip Selects plus one Output Enable pin • Bidirectional inputs and outputs directly TTL-compatible
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OCR Scan
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PDF
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IDT71024S70
T71024
576-bit
MO-061,
S5771
S0323
IDT71024S70
K 3568
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 128KX 8-BIT IDT71024 Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM OS Static RAM • Equal access and cycle tim es — Military: 17/20/25ns — Com m ercial: 15/17/20ns _ • Two Chip Selects plus one O utput Enable (OE) pin
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128KX
IDT71024
17/20/25ns
15/17/20ns
32-pin
400mil
IL-STD-883,
IDT71024
576-bit
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT71V128 3.3V CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times
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OCR Scan
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PDF
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12/15/20ns
32-pin
IDT71V128
IDT71V128
576-bit
200mV
71V128
400-mil
SQ32-3)
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 1 MEG 128Kx 8-BIT IDT71024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 ad v a n c e d h ig h -s p e e d C M O S s ta tic RAM • E qual a cc e s s and cycle tim e s — M ilitary: 1 5 /1 7/2 0/25 ns — C o m m e rc ia l: 1 2 /1 5 /1 7/2 0ns
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OCR Scan
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PDF
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128Kx
IDT71024
IDT71024
MIL-STD-883,
400-mil
D32-2)
P32-3)
L32-2)
300-mil
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