Hitachi DSA00164
Abstract: No abstract text available
Text: HM5117805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-630D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended
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HM5117805
ADE-203-630D
152-word
28-pin
ns/60
ns/70
Hitachi DSA00164
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ct rac 70
Abstract: No abstract text available
Text: 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh E0156H10 (Ver. 1.0) (Previous ADE-203-630D (Z) Jun. 27, 2001 LP EO Description HM5117805 Series The HM5117805 is a C MOS dynamic R AM orga nize d 2, 097,152-w ord × 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM5117805 off ers Extende d Da ta
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HM5117805
E0156H10
ADE-203-630D
152-w
28-pin
ns/60
ct rac 70
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630d
Abstract: HM5117805 HM5117805J-5 HM5117805J-6 HM5117805J-7 HM5117805LJ-5 HM5117805S-5 HM5117805S-6 HM5117805S-7 Hitachi DSA00504
Text: HM5117805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-630D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended
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HM5117805
ADE-203-630D
152-word
28-pin
ns/60
ns/70
630d
HM5117805J-5
HM5117805J-6
HM5117805J-7
HM5117805LJ-5
HM5117805S-5
HM5117805S-6
HM5117805S-7
Hitachi DSA00504
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PDF
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HM514405C
Abstract: HM514405CS-6 HM514405CS-7 HM514405CS-8 HM514405CTT-6 HM514405CTT-7 HM514405CTT-8 Hitachi DSA0015
Text: HM514405C Series 1,048,576-word x 4-bit Dynamic Random Access Memory Description The Hitachi HM514405C is a CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM514405C has realized higher density, higher performance and various functions by employing 0.8 µm CMOS process
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HM514405C
576-word
300-mil
26-pin
HM514405CS-6
HM514405CS-7
HM514405CS-8
HM514405CTT-6
HM514405CTT-7
HM514405CTT-8
Hitachi DSA0015
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HM51W4405BS
Abstract: HM51W4405BS-6R HM51W4405BS-7 Hitachi DSA0015
Text: HM51W4405BS Series 1,048,576-word x 4-bit Dynamic Random Access Memory ADE-203-686A Z Rev. 1.0 Nov. 29, 1996 Description The Hitachi HM51W4405BS Series is a CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM51W4405BS Series has realized higher density, higher performance and various functions by employing
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Original
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HM51W4405BS
576-word
ADE-203-686A
HM51W4405BS
26-pin
HM51W4405BS-7)
HM51W4405BS-6R)
HM51W4405BS-6R
HM51W4405BS-7
Hitachi DSA0015
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PDF
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Hitachi DSA00164
Abstract: No abstract text available
Text: HM51W17805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-631D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805 offers
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HM51W17805
ADE-203-631D
152-word
28-pin
ns/60
ns/70
Hitachi DSA00164
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PDF
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HM51W17805
Abstract: HM51W17805J-5 HM51W17805J-6 HM51W17805J-7 HM51W17805LJ-5 HM51W17805S-5 HM51W17805S-6 HM51W17805S-7 Hitachi DSA00196
Text: HM51W17805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-631D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805 offers Extended
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HM51W17805
ADE-203-631D
152-word
28-pin
ns/60
ns/70
HM51W17805J-5
HM51W17805J-6
HM51W17805J-7
HM51W17805LJ-5
HM51W17805S-5
HM51W17805S-6
HM51W17805S-7
Hitachi DSA00196
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PDF
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HM51W17805
Abstract: HM51W17805J-5 HM51W17805J-6 HM51W17805J-7 HM51W17805LJ-5 HM51W17805S-5 HM51W17805S-6 HM51W17805S-7 Hitachi DSA0015
Text: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM ADE-203-631C Z Rev. 3.0 Feb. 25, 1997 Description The Hitachi HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805 offers Extended
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HM51W17805
152-word
ADE-203-631C
28-pin
ns/60
HM51W17805J-5
HM51W17805J-6
HM51W17805J-7
HM51W17805LJ-5
HM51W17805S-5
HM51W17805S-6
HM51W17805S-7
Hitachi DSA0015
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PDF
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Hitachi DSA00164
Abstract: No abstract text available
Text: HM51W4405BS Series 1,048,576-word x 4-bit Dynamic Random Access Memory ADE-203-686A Z Rev. 1.0 Nov. 29, 1996 Description The Hitachi HM51W4405BS Series is a CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM51W4405BS Series has realized higher density, higher performance and various functions by
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Original
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HM51W4405BS
576-word
ADE-203-686A
26-pin
HM51W4405BS-7)
HM51W4405BS-6R)
Hitachi DSA00164
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PDF
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HM5118165
Abstract: HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165LJ-5 HM5118165LJ-6 HM5118165LJ-7 HM5118165TT-5 HM5118165TT-6 Hitachi DSA0044
Text: HM5118165 Series 16 M EDO DRAM 1-Mword x 16-bit 1 k Refresh ADE-203-636D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced 0.5 µm CMOS technology for high performance and low power. The HM5118165 offers
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HM5118165
16-bit)
ADE-203-636D
576-word
16-bit.
42-pin
50-pin
ns/60
HM5118165J-5
HM5118165J-6
HM5118165J-7
HM5118165LJ-5
HM5118165LJ-6
HM5118165LJ-7
HM5118165TT-5
HM5118165TT-6
Hitachi DSA0044
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PDF
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HM51W17805LJ-5
Abstract: HM51W17805S-5 HM51W17805S-6 HM51W17805S-7 HM51W17805 HM51W17805J-5 HM51W17805J-6 HM51W17805J-7
Text: HM51W17805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-631D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805 offers
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Original
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HM51W17805
ADE-203-631D
152-word
28-pin
ns/60
ns/70
HM51W17805LJ-5
HM51W17805S-5
HM51W17805S-6
HM51W17805S-7
HM51W17805J-5
HM51W17805J-6
HM51W17805J-7
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PDF
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Hitachi DSA00164
Abstract: No abstract text available
Text: HM5118165 Series 16 M EDO DRAM 1-Mword x 16-bit 1 k Refresh ADE-203-636D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced 0.5 µm CMOS technology for high performance and low power. The HM5118165 offers
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HM5118165
16-bit)
ADE-203-636D
576-word
16-bit.
42-pin
50-pin
ns/60
Hitachi DSA00164
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PDF
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HM5116405
Abstract: Hitachi DSA00164
Text: HM5116405 Series HM5117405 Series 16 M EDO DRAM 4-Mword x 4-bit 4 k Refresh/2 k Refresh ADE-203-633D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word × 4-bit. They employ the most advanced CMOS technology for high performance and low power. The
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HM5116405
HM5117405
ADE-203-633D
304-word
26-pin
Hitachi DSA00164
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PDF
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HM5116405
Abstract: HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM5116405S-5 HM5116405S-6 HM5116405S-7 HM5117405S-5 Hitachi DSA00513
Text: HM5116405 Series HM5117405 Series 16 M EDO DRAM 4-Mword x 4-bit 4 k Refresh/2 k Refresh ADE-203-633D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word × 4-bit. They employ the most advanced CMOS technology for high performance and low power. The
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Original
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HM5116405
HM5117405
ADE-203-633D
304-word
26-pin
HM5116405LS-5
HM5116405LS-6
HM5116405LS-7
HM5116405S-5
HM5116405S-6
HM5116405S-7
HM5117405S-5
Hitachi DSA00513
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PDF
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HM5116405
Abstract: HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM5116405S-5 HM5116405S-6 HM5116405S-7 HM5117405S-5 HM5117405 Hitachi DSA0015
Text: HM5116405 Series HM5117405 Series 16 M EDO DRAM 4-Mword 4-bit 4 k Refresh/2 k Refresh ADE-203-633D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word 4-bit. They employ the most advanced CMOS technology for high performance and low power. The
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Original
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HM5116405
HM5117405
ADE-203-633D
304-word
26-pin
HM5116405LS-5
HM5116405LS-6
HM5116405LS-7
HM5116405S-5
HM5116405S-6
HM5116405S-7
HM5117405S-5
Hitachi DSA0015
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PDF
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HM51W17805
Abstract: HM51W17805J-5 HM51W17805J-6 HM51W17805J-7 HM51W17805LJ-5 HM51W17805S-5 HM51W17805S-6 HM51W17805S-7
Text: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM, organized 2,097,152-words × 8-bits. It employs the most advanced CMOS technology for high performance and low power consumption. The HM51W17805
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Original
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HM51W17805
152-word
ADE-203-631B
152-words
HM51W17805
28-pin
ns/60
HM51W17805J-5
HM51W17805J-6
HM51W17805J-7
HM51W17805LJ-5
HM51W17805S-5
HM51W17805S-6
HM51W17805S-7
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PDF
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HS-65C262
Abstract: No abstract text available
Text: HARRIS SEMICONDUCTOR HS-65C262RH/RRH HS-65T262RRH Radiation Hardened 16Kx 1 CMOS RAM December 1992 Features Pinouts 20 PIN CERAMIC DIP CASE OUTLINE D8, CONFIGURATION 3 TOP VIEW • Radiation Hardened EPI-CMOS • Total Dose 2 x 10s RAD SI - Transient Upset > 5 x 108 RAD(Sl)/s
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OCR Scan
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HS-65C262RH/RRH
HS-65T262RRH
150ns
384x1-Bit
HS-65C262,
HS-65T262RH
HS-65C262
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PDF
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T12N
Abstract: 1256C A-04 DIN40040
Text: TELEFUNKEN ELECTRONIC filC » • i H S D M b OOObOSB 7 ■ AL66 7"- T12N T yp enrelhe/Typ e range T12N Elektrische Eigenschaften Electrical properties H öchstzulässige W erte U drmi U rrh Periodische Vorwärts- und repetitive peak forward off-state Rückwärts-Spitzensperrspannung
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OCR Scan
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1256C.
T12N
1256C
A-04
DIN40040
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PDF
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101-06A
Abstract: No abstract text available
Text: DIXYS Fast Recovery Epitaxial Diode FRED DSEI 2x101 V RRM — IFAVM - 600 V 2x 96 A 35 ns vr Preliminary data V rsm V rrh V V 600 600 _ w DSEI 2x 101-06A Symbol T est C o nd ition s U(RMS) Tyj — T VJM 1200 1300 A A TVJ = 150°C; t = 10 ms (50 Hz), sine
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OCR Scan
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01-06A
2x101
OT-227
E72873
101-06A
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PDF
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Untitled
Abstract: No abstract text available
Text: f il H U U S E M I C O N D U C T O R A R R IS HS-65C262RH/RRH HS-65T262RRH Radiation Hardened 16K x 1 CMOS RAM December 1992 Pinouts Features • Radiation Hardened EPI-CMOS • Total Dose 2 x 10s RAD Sl • Transient Upset > 5 x 108 RAD(Siys - Latch-up Free > 1 x 101* RAD(Siys
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OCR Scan
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HS-65C262RH/RRH
HS-65T262RRH
150ns
HS-65C262,
HS-65T262RH
-65T262R
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PDF
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SIEMENS BST
Abstract: SIEMENS BST P SIEMENS BST f SIEMENS BST P 4960 SIEMENS "bst e" SIEMENS BST F 05 SIEMENS BST P 4960 d SIEMENS BST G 03 60 SIEMENS BST 4486 BSTN44C80
Text: SIEMENS AKTIENGESELLSCHAF Type ^DRM ññD D ^TSM Í trms 25°C,10ms A ^RRH V A B St N 44 C 60 900 B StN 4 4 C 8 0 1 200 B StN 4 4 C 86 1 300 BSt N 47 C 60 900 B St N 47 C 66 1000 B St N 49 B 53 800 B St N 49 B 60 900 B S tN 6 1 1 3 200 B St N 6120 300 B St N 6126
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OCR Scan
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G0151L
BStN44C80
BStN44C86
BStN6113
BStP4460
BStP4480
SIEMENS BST
SIEMENS BST P
SIEMENS BST f
SIEMENS BST P 4960
SIEMENS "bst e"
SIEMENS BST F 05
SIEMENS BST P 4960 d
SIEMENS BST G 03 60
SIEMENS BST 4486
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PDF
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V05 SMD CODE MARKING
Abstract: AG qd SMD smd marking code v05 md27c128 qml-38535 MD27C128-20 27C128 GDIP1-T28 27C128-25BXA 5962-8766105xx
Text: R E V IS IO N S LTR DATE YR-MO-DA D E S C R IP T IO N APPROVED A A dd e d A rrh e n iu s e q ua tion for u n b ia se d bake un d e r m argin test m ethod A, b a ck end m argin te st ste p C. C o rrected m ilitary part nu m be rs for de vice type s 01 and 02. T echn ica l ch a n g e s m ade to
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OCR Scan
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thrC128-300/BXA
27C128-30BXA
WS27C128L-DMB
5962-8766107YX
AM27C128-300/BUA
27C128-30BUC
WS27C128L-30CMB
5962-8766108XX
WS57C128F-70DMB
5962-8766108YX
V05 SMD CODE MARKING
AG qd SMD
smd marking code v05
md27c128
qml-38535
MD27C128-20
27C128
GDIP1-T28
27C128-25BXA
5962-8766105xx
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PDF
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RP102G
Abstract: RP100G RP101G RP104G RP106G RP108G RP110G 102B2
Text: DI OT EC E L E C T R O N I C S CORP SfiE V DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 EflMTlO? GGOGIST ^bl « » I X Data Sheet No.: FSDP-102-A2 ' - n 0 3 -1 3 1 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES
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OCR Scan
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FSDP-102-A2
DO-41,
MIL-STD-202,
50/100ns/cm
RP102G
RP100G
RP101G
RP104G
RP106G
RP108G
RP110G
102B2
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PDF
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CL-200 IR
Abstract: RP300G RP301G RP302G RP304G RP306G RP308G
Text: DIOTEC ELECTRONICS CORP SflE D M DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 u aL Tel.: 310 767-1052 Fax:(310)767-7958 m 204^107 OOODlb'i ADO • » I X Data Sheet No.: FSDP-301-A2 r r „ O 3 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES
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OCR Scan
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FSDP-301-A2
D0-27,
MIL-STD-202,
50/100ns/cm
CL-200 IR
RP300G
RP301G
RP302G
RP304G
RP306G
RP308G
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PDF
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