RQA0009TXDQS Search Results

RQA0009TXDQS Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RQA0009TXDQS#H1		Renesas Electronics Corporation	N-Channel MOSFET

RQA0009TXDQS Price and Stock

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Renesas Electronics Corporation RQA0009TXDQS-H1 MOSFET N-CH 16V 3.2A UPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RQA0009TXDQS-H1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation RQA0009TXDQS#H1 Trans RF MOSFET N-CH 3.2A 4-Pin(3+Tab) UPAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RQA0009TXDQS#H1		3,100		113	1 - 10 - 100 - 1000 $3.0125 10000 $3.0125	Buy Now
Rochester Electronics	RQA0009TXDQS#H1		3,100		1	1 $2.83 10 $2.83 100 $2.66 1000 $2.41 10000 $2.41	Buy Now

RQA0009TXDQS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RQA0009TXDQS		Renesas Technology	Silicon N-Channel MOS FET		Original	PDF
RQA0009TXDQS#H1		Renesas Electronics	MOSFET N-CH 16V 3.2A UPAK		Original	PDF

RQA0009TXDQS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)	Original	PDF	RQA0009TXDQS R07DS0492EJ0200 REJ03G1520-0100) PLZZ0004CA-A
RQA0009TXDQS Abstract: RQA0009 RQA0009TXTL-E REJ03G1520-0100 Text: RQA0009TXDQS Silicon N-Channel MOS FET REJ03G1520-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% VDS = 6 V, f = 520 MHz • Compact package capable of surface mounting	Original	PDF	RQA0009TXDQS REJ03G1520-0100 PLZZ0004CA-A RQA0009TXDQS RQA0009 RQA0009TXTL-E REJ03G1520-0100
RQA0009 Abstract: 17-33 0952 Text: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)	Original	PDF	RQA0009TXDQS R07DS0492EJ0200 REJ03G1520-0100) PLZZ0004CA-A RQA0009 17-33 0952
RQA0009 Abstract: RQA0009TXDQS RQA0009TXTL-E Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF