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    RLT1060_350G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NX6350GP33-AZ Renesas Electronics Corporation 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 & 10 Gb/s E-PON ONU Application Visit Renesas Electronics Corporation
    NX6350GP31-AZ Renesas Electronics Corporation 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 & 10 Gb/s E-PON ONU Application Visit Renesas Electronics Corporation
    NX6350GP29-AZ Renesas Electronics Corporation 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 & 10 Gb/s E-PON ONU Application Visit Renesas Electronics Corporation
    UPD70F3350GC(A)-8EA-A Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    NX6350GP27-AZ Renesas Electronics Corporation 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 & 10 Gb/s E-PON ONU Application Visit Renesas Electronics Corporation

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    RLT1060_350G

    Abstract: No abstract text available
    Text: RLT1060-350G TECHNICAL DATA High Power Infrared Laser Diode Lasing wavelength: 1064 nm, typ. Max. optical power: 350 mW Package: 9 mm SOT-148 PIN CONNECTION: 1) Laserdiode anode 2) Laserdiode cathode and photodiode cathode 3) Photodiode anode Optical-Electrical Characteristics (Tc = 25°C)


    Original     		PDF RLT1060-350G OT-148) rlt1060 RLT1060_350G