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    RESISTOR 2020 PACKAGE 47 OHM Search Results

    RESISTOR 2020 PACKAGE 47 OHM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    RESISTOR 2020 PACKAGE 47 OHM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PTF191601E

    Abstract: BCP56 LM7805 ATC 4r7 capacitor 100b
    Text: PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 – 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the


    Original     		PDF PTF191601E PTF191601F PTF191601E PTF191601F 160-watt, PTF191601F* BCP56 LM7805 ATC 4r7 capacitor 100b

    AN1955

    Abstract: ECUV1H150JCV FR408 MMG3005NT1
    Text: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 1, 11/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small -signal, high


    Original     		PDF MMG3005NT1 MMG3005NT1 AN1955 ECUV1H150JCV FR408

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 0, 11/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high


    Original     		PDF MMG3005NT1 MMG3005NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 2, 5/2006 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high


    Original     		PDF MMG3005NT1 MMG3005NT1

    MMG3005NT1

    Abstract: CRCW060333R0FKEA 74126 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101
    Text: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 5, 4/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high


    Original     		PDF MMG3005NT1 MMG3005NT1 CRCW060333R0FKEA 74126 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101

    52887

    Abstract: 79122 82812 ECUV1H150JCV FR408 MMG3005NT1 A113 A114 A115 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 6, 6/2009 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small - signal, high


    Original     		PDF MMG3005NT1 MMG3005NT1 52887 79122 82812 ECUV1H150JCV FR408 A113 A114 A115 AN1955

    0057X

    Abstract: 52887 90758 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101
    Text: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 3, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high


    Original     		PDF MMG3005NT1 MMG3005NT1 0057X 52887 90758 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101

    109Z4

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 8, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


    Original     		PDF MMG3005NT1 MMG3005NT1 109Z4

    45288

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 8, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


    Original     		PDF MMG3005NT1 MMG3005NT1 45288

    FR408

    Abstract: MMG3005NT1 AN1955 C0603C103J5RAC ECUV1H150JCV FR-408 CRCW060333R0FKEA CRCW06030000FK
    Text: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 7, 5/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


    Original     		PDF MMG3005NT1 MMG3005NT1 FR408 AN1955 C0603C103J5RAC ECUV1H150JCV FR-408 CRCW060333R0FKEA CRCW06030000FK

    A19045

    Abstract: No abstract text available
    Text: PTFA190451E PTFA190451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA190451E PTFA190451F 45-watt, H-30265-2 H-31265-2 A19045

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watt, DCS/PCS Band PTF 102098* Description Key Features The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P-1dB and 14.5 dB linear gain. Full gold metallization


    Original     		PDF PCD1287CT P220ECT 1-877-GOLDMOS 1522-PTF

    irl 3710

    Abstract: 87541 ECUV1H150JCV pf 83744 A113 A114 A115 AN1955 C101 FR408
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 0, 11/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high


    Original     		PDF MMG3004NT1 MMG3004NT1 irl 3710 87541 ECUV1H150JCV pf 83744 A113 A114 A115 AN1955 C101 FR408

    irl 3710

    Abstract: 840 21210 FR408 ECUV1H 07482
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 1, 5/2006 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high


    Original     		PDF MMG3004NT1 MMG3004NT1 irl 3710 840 21210 FR408 ECUV1H 07482

    BCP56

    Abstract: LM7805 PTFA190451E PTFA190451F RO4350
    Text: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,


    Original     		PDF PTFA190451E PTFA190451F PTFA190451E PTFA190451F 45-watt, H-36265-2 H-37265-2 BCP56 LM7805 RO4350

    Untitled

    Abstract: No abstract text available
    Text: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,


    Original     		PDF PTFA190451E PTFA190451F PTFA190451E PTFA190451F 45-watt, H-36265-2 H-37265-2

    Untitled

    Abstract: No abstract text available
    Text: PTF 102098 LDMOS RF Power Field Effect Transistor 90 Watts, 1805–1880 MHz, 1930–1990 MHz Description The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS or PCS bands. This LDMOS device operates at 47% efficiency P–1dB and 14.5 dB linear gain. Full


    Original     		PDF 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: PTF181301E PTF181301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF181301E and PTF181301F are thermally-enhanced, 130-watt, internally matched GOLDMOS FETs intended for GSM and EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides


    Original     		PDF PTF181301E PTF181301F 130-watt, PTF181301F*

    250328

    Abstract: 66417 PQFN package power freescale transistors 97218 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 4, 6/2009 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small - signal, high


    Original     		PDF MMG3004NT1 MMG3004NT1 250328 66417 PQFN package power freescale transistors 97218 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC

    275-232

    Abstract: 38494 FR408 66417 A113 A114 A115 AN1955 C0603C103J5RAC 250328
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 3, 3/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high


    Original     		PDF MMG3004NT1 MMG3004NT1 275-232 38494 FR408 66417 A113 A114 A115 AN1955 C0603C103J5RAC 250328

    38494

    Abstract: 22851
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 8, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


    Original     		PDF MMG3004NT1 MMG3004NT1 38494 22851

    66417

    Abstract: A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101 ECUV1H150JCV FR408
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 2, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high


    Original     		PDF MMG3004NT1 MMG3004NT1 66417 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101 ECUV1H150JCV FR408

    FR408

    Abstract: 66417 AN1955 C0603C103J5RAC ECUV1H150JCV MMG3004NT1 AN377 275-232 5 vdc 4-0308 2825 qfn
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 5, 5/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


    Original     		PDF MMG3004NT1 MMG3004NT1 FR408 66417 AN1955 C0603C103J5RAC ECUV1H150JCV AN377 275-232 5 vdc 4-0308 2825 qfn

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 8, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


    Original     		PDF MMG3004NT1 MMG3004NT1