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    PTFA190451F Search Results

    PTFA190451F Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA190451F Infineon Technologies 1800 MHz to 2000 MHz; Package: PG:H-31265-2; Flange Type: Earless; Matching: I/O; Frequency Band: 1,930.0 - 1,990.0 MHz; P1dB (typ): 45.0 W; Supply Voltage: 28.0 V Original PDF
    PTFA190451FV4 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 45W H-37265-2 Original PDF
    PTFA190451FV4R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 45W H-37265-2 Original PDF
    PTFA190451FV4R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 45W H-37265-2 Original PDF
    PTFA190451FV4XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 45W H-37265-2 Original PDF

    PTFA190451F Datasheets Context Search

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    BCP56

    Abstract: LM7805 PTFA190451E PTFA190451F RO4350
    Text: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,


    Original     		PDF PTFA190451E PTFA190451F PTFA190451E PTFA190451F 45-watt, H-36265-2 H-37265-2 BCP56 LM7805 RO4350

    A19045

    Abstract: No abstract text available
    Text: PTFA190451E PTFA190451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA190451E PTFA190451F 45-watt, H-30265-2 H-31265-2 A19045

    Untitled

    Abstract: No abstract text available
    Text: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,


    Original     		PDF PTFA190451E PTFA190451F PTFA190451E PTFA190451F 45-watt, H-36265-2 H-37265-2

    BCP56

    Abstract: LM7805 PTFA190451E PTFA190451F RO4350
    Text: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,


    Original     		PDF PTFA190451E PTFA190451F PTFA190451E PTFA190451F 45-watt, H-37265-2 BCP56 LM7805 RO4350

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PDF PTFA041501E PTFA041501F PTFA070601E PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 H-36260-2 PTFA142401EL PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PDF PTFA041501E PTFA041501F PTFA070601E 725-7452FL PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 PTFA041501E PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PDF PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503